Diodes ZTX1051A User Manual
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 FEBRUARY 95
FEATURES
*B
* Very Low Saturation Voltage
*High Gain
* Inherently Low Noise
APPLICATIONS
* Emergency Lighting
* Low Noise Audio
ABSOLUTE MAXIMUM RATINGS.
=150V
CEV
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-55 to +200 °C
ZTX1051A
C
B
E
E-Line
TO92 Compatible
150 V
40 V
5V
10 A
4A
500 mA
1W
ZTX1051A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
t
on
t
off
150 190 V
150 190 V
I
=100µA
C
IC=100µA
40 60 V IC=10mA
150 190 V
5 8.8 V
IC=100µA, V
I
=100µA
E
0.3 10 nA VCB=120V
0.3 10 nA VEB=4V
0.3 10 nA VCES=120V
17
75
165
25
110
210
mV
mV
mV
I
=0.2A, IB=10mA*
C
I
=1A, IB=10mA*
C
I
=4A, IB=100mA*
C
920 1000 mV IC=4A, IB=100mA*
825 950 mV IC=4A, VCE=2V*
290
300
190
45
440
450
310
70
1200
IC=10mA, VCE=2V*
I
=1A, VCE=2V*
C
I
=4A, VCE=2V*
C
I
=10A, VCE=2V*
C
155 MHz IC=50mA, VCE=10V
f=100MHz
27 40 pF VCB=10V, f=1MHz
100 ns IC=4A, IB=40mA, VCC=10V
300 ns
=4A, I
I
C
=±40mA, V
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
=1V
EB
=10V
CC
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