Diodes ZMZ20M User Manual

Page 1
MAGNETIC FIELD SENSORS
DESCRIPTION
The ZMZ20M is an extremely sensitive magnetic field sensor ina4pin E-line package employing the magneto-resistive effects of thin film Permalloy. It allows the measurement of magnetic fields or the detection of metallic parts. The sensor consists of a chip covered with Permalloy stripes which form a Wheatstone bridge, whose output voltage is proportional to the magnetic fieldcomponentHy.A perpendicular field Hx is necessary to suppress the hysteresis and this is provided by an internal permanent magnet.
FEATURES
Output voltage proportional to magnetic field Hy
Magnetic fields vertical to the chip level are not
effective
APPLICATIONS
Linear position sensors for process control, door
interlocks, proximity detectors, machine tool sensing
Scalar measurement for compassing
Automotive - door switches, engine position and speed sensing
Metering of fluids by sensing rotation of impeller
Traffic counting & vehicle-type sensing
Measurement of current in a conductor without connection
ZMZ20M
Hy
Hx
I
-
E
N
E
L
ORDERING INFORMATION
DEVICE BOX
ZMZ20M
Bulk in box (2,000 components per box)
DEVICE MARKING
M2M
ISSUE 2 - MARCH 2004
PINOUT
SIDE VIEW
1
SEMICONDUCTORS
Page 2
ZMZ20M
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Supply voltage V
Total power dissipation P
Operating temperature range T
B
TOT
amb
12 V
120 mW
-25 to +125 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Bridge resistance R
Output voltage range V
br
O/VB
1.2 1.7 2.2 k
12 18 24 mV/V
Auxiliary field Hx - 2.5 - kA/m
Disturbing field H
d
- - 30 kA/m
Open circuit sensitivity S 3.0 5.0 7.0 (mV/V)/(kA/m) No disturbing field H
allowed
Hysteresis of output voltage V
Offset voltage V
Operating frequency f
Temperature coefficient of offset voltages
Temperature coefficient of bridge resistance
Temperature coefficient of open circuit sensitivity
=5V
V
B
OH/VB
off/VB
max
TCV
TCR
TCS
off
br
V
- - 50 µV/V Hy 2kA/m
-1.5 - +1.5 mV/V
0 - 1 MHz
-3 - +3 (µV/V)/K T
0.25 0.3 0.35 %/K T
-0.25 -0.3 -0.35 %/K T
= -25 to +125°C
amb
= -25 to +125°C
amb
= -25 to +125°C
amb
d
SEMICONDUCTORS
ISSUE 2 - MARCH 2004
2
Page 3
Sensor output characteristic
ZMZ20M
Vo(mV/V)
15
10
5
0
-5
-10
-15
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Vo=f(Hy)typ.
Hy(kA/m)
ZMZ20M
VB(V)
14.000
12.000
10.000
8.000
6.000
4.000
2.000
0.000
-50 0 50 100 150 200
ISSUE 2 - MARCH 2004
Supply voltage (maximum) derating curve
ZMZ20M
V
bmax
=f(T
T
amb
3
amb
(˚C )
)
SEMICONDUCTORS
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ZMZ20M
B
PACKAGE OUTLINE
A
E
G
D
GG
R
B
H
C
B1
F
L
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
© Zetex plc 2004
Europe
Zetex GmbH Streitfeldstraße 19 D-81673 München Germany
Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publicationis issued toprovide outline informationonly which (unlessagreed by theCompany in writing)may not beused, applied or reproduced for any purposeor form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
Millimeters Inches
Min Max Min Max
A 0.8 1.0 0.032 0.039
B 0.35 0.48 0.014 0.019
B1 0.45 0.60 0.018 0.024
C 4.0 4.4 0.158 0.173
D 3.8 4.2 0.150 0.165
E 2.4 2.8 0.094 0.110
F
1.2
- 0.047 -
G 1.25 - 0.049 -
Americas
Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA
Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
www.zetex.com
Asia Pacific
Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong
Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquaters
Zetex plc Fields New Road, Chadderton Oldham, OL9 8NP United Kingdom
Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
ISSUE 2 - MARCH 2004
SEMICONDUCTORS
4
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