Diodes ZMZ20M User Manual
MAGNETIC FIELD SENSORS
DESCRIPTION
The ZMZ20M is an extremely sensitive magnetic field sensor ina4pin
E-line package employing the magneto-resistive effects of thin film
Permalloy. It allows the measurement of magnetic fields or the detection
of metallic parts. The sensor consists of a chip covered with Permalloy
stripes which form a Wheatstone bridge, whose output voltage is
proportional to the magnetic fieldcomponentHy.A perpendicular field Hx
is necessary to suppress the hysteresis and this is provided by an internal
permanent magnet.
FEATURES
Output voltage proportional to magnetic field Hy
•
Magnetic fields vertical to the chip level are not
•
effective
APPLICATIONS
Linear position sensors for process control, door
•
interlocks, proximity detectors, machine tool
sensing
•
Scalar measurement for compassing
•
Automotive - door switches, engine position and
speed sensing
•
Metering of fluids by sensing rotation of impeller
•
Traffic counting & vehicle-type sensing
•
Measurement of current in a conductor without
connection
ZMZ20M
Hy
Hx
I
-
E
N
E
L
ORDERING INFORMATION
DEVICE BOX
ZMZ20M
Bulk in box (2,000 components per box)
DEVICE MARKING
•
M2M
ISSUE 2 - MARCH 2004
PINOUT
SIDE VIEW
1
SEMICONDUCTORS
ZMZ20M
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Supply voltage V
Total power dissipation P
Operating temperature range T
B
TOT
amb
12 V
120 mW
-25 to +125 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Bridge resistance R
Output voltage range V
br
O/VB
1.2 1.7 2.2 k⍀
12 18 24 mV/V
Auxiliary field Hx - 2.5 - kA/m
Disturbing field H
d
- - 30 kA/m
Open circuit sensitivity S 3.0 5.0 7.0 (mV/V)/(kA/m) No disturbing field H
allowed
Hysteresis of output voltage V
Offset voltage V
Operating frequency f
Temperature coefficient of offset
voltages
Temperature coefficient of bridge
resistance
Temperature coefficient of open
circuit sensitivity
=5V
V
B
OH/VB
off/VB
max
TCV
TCR
TCS
off
br
V
- - 50 µV/V Hy ⱕ 2kA/m
-1.5 - +1.5 mV/V
0 - 1 MHz
-3 - +3 (µV/V)/K T
0.25 0.3 0.35 %/K T
-0.25 -0.3 -0.35 %/K T
= -25 to +125°C
amb
= -25 to +125°C
amb
= -25 to +125°C
amb
d
SEMICONDUCTORS
ISSUE 2 - MARCH 2004
2
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