Diodes ZMZ20 User Manual
MAGNETIC FIELD SENSORS
DESCRIPTION
The ZMZ20 is an extremely sensitive magnetic field sensor ina4pin
E-Line package employing the magneto-resistive effects of thin film
Permalloy. It allows themeasurementof magnetic fields or the detection
of metallic parts. The sensor consists of a chip covered with Permalloy
stripes which form a Wheatstone bridge, whose output voltage is
proportional to the magnetic field component Hy. A perpendicular field
Hx is necessary to suppress the hysteresis and this can be provided by
using a small permanent magnet.
FEATURES
Output voltage proportional to magnetic field Hy
•
Adjustment of sensitivity and suppression of
•
hysteresis by the auxiliary magnetic field Hx
Magnetic fields vertical to the chip level are not
•
effective
APPLICATIONS
• Linear position sensors for process control, door
interlocks, proximity detectors, machine tool sensing
•
Scalar measurement for compassing
•
Automotive - door switches, engine position and
speed sensing
•
Metering of fluids by sensing rotation of impeller
•
Traffic counting and vehicle-type sensing
•
Measurement of current in a conductor without
connection
ZMZ20
I
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E
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E
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ORDERING INFORMATION
DEVICE BOX
ZMZ20
Bulk in box (2,000 components per box)
DEVICE MARKING
•
M20
ISSUE 2 - JANUARY 2004
PINOUT
SIDE VIEW
1
SEMICONDUCTORS
ZMZ20
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Supply voltage V
Total power dissipation P
Operating temperature range T
B
TOT
amb
12 V
120 mW
-40 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C and Hx=3kA/m unless otherwise stated)
amb
PARAMETER SYMBO MIN. TYP. MAX. UNIT CONDITIONS
Bridge resistance R
Output voltage range V
br
O/VB
1.2 1.7 2.2 k⍀
16 20 24 mV/V
Open circuit sensitivity S 3.7 4.7 5.7 (mV/V)/(kA/m) No disturbing field H
allowed
Hysteresis of output voltage V
Offset voltage V
Operating frequency f
Temperature coefficient of offset
voltages
Temperature coefficient of bridge
resistance
Temperature coefficient of open
circuit sensitivity
=5V
V
B
Temperature coefficient of open
circuit sensitivity
=3mA
I
B
OH/VB
off/VB
max
TCV
TCR
TCS
TCS
off
br
V
I
- - 50 µV/V Hy = 2kA/m
-1.0 - +1.0 mV/V
0 - 1 MHz
-3 -
+3 (µV/V)/K T
0.25 0.3 0.35 %/K T
-0.25 -0.3 -0.35 %/K T
- -0.1 - %/K T
= -25 to +125°C
amb
= -25 to +125°C
amb
= -25 to +125°C
amb
= -25 to +125°C
amb
d
SEMICONDUCTORS
ISSUE 2 - JANUARY 2004
2
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