Diodes ZMY20M User Manual
MAGNETIC FIELD SENSOR WITH INTERNAL MAGNET
DESCRIPTION
The ZMY20M is an extremely sensitive magnetic sensor
employing the magneto-resistive effect of thin film permalloy.
It allows the measurement of magnetic fields or the detection
of magnetic parts. The highly sensitive and small size
magnetoresistivesensorsconsistof chipcovered withthin film
permalloy stripes. These stripes form a Wheatstone bridge,
whose output voltage is proportional to the magnetic field
component Hy. The required perpendicular field Hx which is
necessary to stabilize sensor operation, is created by an
internal permanent magnet.
FEATURES
Package: SOT223
•
Supply voltage 12V
•
Internal magnet for creation of auxiliary field Hx
•
Available on 12mm tape
•
APPLICATIONS
•
Linear position measurement
ZMY20M
•
Angular position measurement
•
Navigation (electronic compass)
•
Revolution measurement
ORDERING INFORMATION
DEVICE REEL
ZMY20MTA
ZMY20MTC 13” 12mm 4,000
TAPE WIDTH
SIZE
7” 12mm 1,000
QUANTITY PER
REEL
DEVICE MARKING
•
ZMY20M
ISSUE 2 - JANUARY 2004
1
SEMICONDUCTORS
ZMY20M
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Supply voltage V
Total power dissipation P
Operating temperature range T
Storage temperature range T
B
TOT
amb
stg
12 V
120 mW
-25 to +125 °C
-25 to +125 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Bridge resistance R
Output voltage range V
br
O/VB
1.2 1.7 2.2 k⍀
12 18 24 mV/V
Auxiliary field Hx - 2 - kA/m
Disturbing field Hd - - 30 kA/m
Open circuit sensitivity S 3.0 5.5 7.0 (mV/V)/
(kA/m)
Hysteresis of output voltage V
Offset voltage V
Operating frequency f
Temperature coefficient of
offset voltages
Temperature coefficient of
bridge resistance
Temperature coefficient of
open circuit sensitivity
V
=5V
B
Temperature coefficient of
open circuit sensitivity
I
= 3mA
B
OH/VB
off/VB
max
TCV
TCR
TCS
TCS
off
br
V
I
--50V/V Hy ⱕ 2kA/m
-1.5 - +1.5 mV/V
0 - 1 MHz
-3 - +3 (V/V)/K T
0.25 0.3 0.35 %/K T
-0.25 -0.3 -0.35 %/K T
- 0.05 - %/K T
No disturbing field
allowed
H
d
V
= const.
B
= -25 to +125°C
amb
= -25 to +125°C
amb
= -25 to +125°C
amb
= -25 to +125°C
amb
SEMICONDUCTORS
ISSUE 2 - JANUARY 2004
2
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