Diodes ZMY20 User Manual
SEMICONDUCTORS
MAGNETIC FIELD SENSOR
V = SUPPLY VOLTAGE
V = OUTPUT VOLTAGE
B
O
+V
B
-V
B
-V
O
+V
O
+V
O
+V
B
-V
O
-V
B
Hy
Hx
DESCRIPTION
The ZMY20 is an extremely sensitive magnetic sensor employing the
magneto-resistive effect of thin film permalloy. It allows the measurement of
magnetic fields or the detection of magnetic parts. The highly sensitive and
small size magnetoresistive sensors consist of a chip covered with thin film
permalloy stripes. These stripes form a Wheatstone bridge, whose output
voltage is proportional to the magnetic field component Hy. A perpendicular
field Hx is necessary to stabilize sensor operation. This can be done by using a
small permanent magnet.
FEATURES
Output voltage proportional to magnetic field Hy
•
ZMY20
Adjustment of sensitivity and suppression of
•
hysteresis by the auxiliary magnetic field Hx
Magnetic fields vertical to the chip level are not
•
effective
APPLICATIONS
• Linear position sensors for process control, door
interlocks, proximity detectors, machine tool
sensing
• Scalar measurement for compassing
• Automotive – door switches, engine position &
speed sensing
•
Metering of fluids by sensing rotation of impeller
•
Traffic counting & vehicle-type sensing
ORDERING INFORMATION
DEVICE REEL
SIZE
ZMY20TA 7” 12mm 1000 units
ZMY20TC 13” 12mm 4000 units
TAPE
WIDTH
QUANTITY
PER REEL
SOT223S
PINOUT
Top View
•
Measurement of current in a conductor without
connection
DEVICE MARKING
•
ZMY20
ISSUE 3 - JUNE 2007
1
ZMY20
SEMICONDUCTORS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Supply Voltage V
Total power dissipation P
Operating Temperature Range T
Storage Temperature Range T
B
TOT
amb
stg
12 V
120 mW
-40 to +150 °C
-65 to +150 °C
ELECTRICAL CHARACTERISTICS.(at T
=25°C and HX=3 kA/m unless otherwise stated)
amb
PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Bridge resistance R
Output voltage range V
br
O/VB
Open ci rcuit sensi ti vi ty S 3.7 4.7 5.7 (mV/V)/
Hysteresis of output
voltage
Offset Voltage V
Operating Frequency f
Temp. Coeff. of offset
voltage
Temp. Coeff. Of bridge
resistance
Temp. Coeff. of open
circuit sensitivity
V
=5V
B
Temp. Coeff. of open
circuit sensitivity
I
=3mA
B
V
OH/VB
off/VB
max
TCV
TCR
TCS
TCS
off
br
V
I
1.2 1.7 2.2 k⍀
16 20 24 mV/V
No disturbing field H
(kA/m)
allowed
- - 50 µV/V Hyⱕ 2kA/m
-1.0 - +1.0 mV/V
0 - 1 MHz
-3 - +3 (µV/V)/K T
0.25 0.3 0.35 %/K T
-0.25 -0.3 -0.35 %/K T
- -0.1 - %/K T
= -25 to +125°C
amb
= -25 to +125°C
amb
= -25 to +125°C
amb
= -25 to +125°C
amb
d
ISSUE 3 - JUNE 2007
2
SEMICONDUCTORS
Application 1 (digital output)
ZMY20
Application 2 (analog output)
ISSUE 3 - JUNE 2007
3
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