Product Summary
• VR = 40V
• I
• V
• I
= 510mA
FAV
= 405mV typ @ 100mA
F
= 7μA typ @ 30V
R
Description
Packaged in the SOD523 package this addition to the Zetex Schottky
diode range offers an ideal low V
low package height of 0.9mm making the device suitable for various
converter, charger, and LED driver circuits.
performance combined with a
F/IR
Applications
• DC – DC Converters
• Mobile Telecomms
• Charger Circuits
• LED Driver Circuits
• MOSFET Voltage Protection Circuits
• High Frequency Rectification
40V SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
• 350mA continuous current rating
• Low profile SOD523 package (0.9mm)
• 100% matte tin plated external leads
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOD523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Leads: Matte Tin Finish annealed over Alloy 42 leadframe (Lead
Free Plating). Solderable per MIL-STD-202, Method 208
• Polarity: Cathode Band
• Weight: 0.004 grams (approximate)
SOD523
Top View
ZHCS350
Ordering Information (Note 4)
Device Packaging Shipping
ZHCS350TA SOD523 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ZHCS350
Document number: DS33214 Rev. 3 - 2
35
35 = Product Type Marking Code
1 of 5
www.diodes.com
© Diodes Incorporated
June 2012
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Continuous Reverse Voltage
Continuous Forward Current
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current
≤ 100μs
t
t ≤ 10ms
V
I
FAV
I
FSM
R
I
F
40 V
350 mA
510 mA
4.2 A
910 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, TA = 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
Notes: 5. For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions.
6. As Note 5, measured at t ≤ 5 secs.
(Note 5)
(Note 6) 330
(Note 5)
(Note 6) 303
R
T
PD
θJA
T
STG
J
285
350
125 °C
-55 to +150 °C
ZHCS350
mW
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage
V
40 60 - V
R
- 300 325
Forward Voltage (Note 7)
V
F
- 335 370
- 405 460
mV
- 730 810
Reverse Current
Diode Capacitance
I
R
C
D
- 7 12
- 3.3 6 pF
Reverse Recovery Time trr - 1.6 - ns
Notes: 7. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.
ZHCS350
Document number: DS33214 Rev. 3 - 2
2 of 5
www.diodes.com
IR = 100μA
I
= 30mA
F
I
= 50mA
F
I
= 100mA
F
I
= 350mA
F
μA
VR = 30V
f = 1MHz, VR = 25V
Switched from I
I
= 100mA
R
Measured @ I
= 100mA to
F
= 10mA
R
June 2012
© Diodes Incorporated