Diodes ZHB6792 User Manual
SM-8 BIPOLAR TRANSISTOR H-BRIDGE
SM-8
(8 LEAD SOT223)
PRELIMINARY DATA SHEET ISSUE A MAY 1998
FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 70V supply
* 1 Amp continuous rating
PARTMARKING DETAIL – ZHB6792
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPNs PNPs UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
j:Tstg
70 -70 V
70 -70 V
SCHEMATIC DIAGRAM CONNECTION DIAGRAM
ZHB6792
5-5 V
2-2 A
1-1 A
-55 to +150 °C
B1
B2
Q1
Q2
E1, E4
C1, C2
E2, E3
Q4
Q3
C3, C4
B4
B3
C1,C
E1,E
C3,C
B
5
2
6
4
7
4
4
8
4
B
1
3
B
2
2
E2,E
3
1
B
3
ZHB6792
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Derate above 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Thermal Resistance - Junction to Ambient*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
= 25°C*
amb
P
tot
1.25
2
10
16
100
62.5
mW/ °C
mW/ °C
°C/ W
°C/ W
W
W
100
D=t1
t1
tP
tP
1ms 10ms 100ms 1s 10s 100s
Pulse Width
Thermal Resistance (°C/W)
80
60
40
20
0
100us
Transient Thermal Resistance
Single Transistor "On"
2.0
1.5
Max Power Dissipation - (Watts)
1.0
0.5
0
020
Sing
40 60 80 100 140120 160
T - Temperature (°C)
Derating curve
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
Thermal Resistance (°C/W)
60
50
40
30
20
10
0
t1
1ms100us
tP
D=t1
tP
10ms
Pulse Width
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
1s100ms
10s
100s
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
10
Dual Transistors †
Du
al
le
1
Full Copper
Minimum
Copper
Single Transistor
Dual Transistors †
Single Transistor
Power Dissapation (W)
0.1
0.1
Pcb Area (inches squared)
110
Pd v Pcb Area Comparison
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
†"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.
ZHB6792
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS.
BreakdownVoltages V
Cut-Off Currents I
Saturation Voltages V
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
EBO
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
70 V
70 V IC=10mA*
5V
500
400
150
150 MHz IC=50mA, VCE=5V, f=50MHz
= 25°C)
amb
I
=100µA
C
I
=100µA
E
0.1
0.1
0.15
0.5VV
VCB=55V
µA
VEB=4V
µA
IC=0.1A, IB=0.5mA*
I
=1A, IB=10mA*
C
0.9 V IC=1A, IB=10mA*
0.9 V IC=1A, VCE=2V*
IC=100mA,VCE=2V*
I
=500mA, VCE =2V*
C
I
=1A,VCE=2V*
C
200 pF VEB=0.5V, f=1MHz
12 pF VCB=10V, f=1MHz
46
1440
nsnsIC=500mA, IB1=50mA
I
=50mA, VCC=10V
B2
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