Diodes ZHB6792 User Manual

SM-8 BIPOLAR TRANSISTOR H-BRIDGE

SM-8

(8 LEAD SOT223)

PRELIMINARY DATA SHEET ISSUE A MAY 1998

FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 70V supply
* 1 Amp continuous rating

PARTMARKING DETAIL – ZHB6792

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL NPNs PNPs UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

j:Tstg

70 -70 V
70 -70 V

SCHEMATIC DIAGRAM CONNECTION DIAGRAM

ZHB6792

5-5 V
2-2 A
1-1 A

-55 to +150 °C

B1

B2

Q1

Q2

E1, E4

C1, C2

E2, E3

Q4

Q3

C3, C4

B4

B3

C1,C
E1,E
C3,C

B

5

2

6

4

7

4

4

8

4

B

1

3

B

2

2

E2,E

3

1

B

3

ZHB6792

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T

Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally

Derate above 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally

Thermal Resistance - Junction to Ambient*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally

= 25°C*

amb

P

tot

1.25
2

10
16

100

62.5

mW/ °C
mW/ °C

°C/ W
°C/ W

W
W

100

D=t1

t1

tP

tP

1ms 10ms 100ms 1s 10s 100s

Pulse Width

Thermal Resistance (°C/W)

80

60

40

20

0
100us

Transient Thermal Resistance

Single Transistor "On"

2.0

1.5

Max Power Dissipation - (Watts)

1.0

0.5

0

020

Sing

40 60 80 100 140120 160

T - Temperature (°C)

Derating curve

D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse

Thermal Resistance (°C/W)

60

50

40

30

20

10

0

t1

1ms100us

tP

D=t1

tP

10ms

Pulse Width

D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse

1s100ms

10s

100s

Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"

10

Dual Transistors †

Du

al

le

1

Full Copper

Minimum
Copper

Single Transistor

Dual Transistors †

Single Transistor

Power Dissapation (W)

0.1

0.1

Pcb Area (inches squared)

110

Pd v Pcb Area Comparison

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
†"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.

ZHB6792

NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS.

BreakdownVoltages V

Cut-Off Currents I

Saturation Voltages V

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Input Capacitance C

Output Capacitance C

Switching Times t

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

I

EBO

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

ibo

obo

on

t

off

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

70 V

70 V IC=10mA*

5V

500
400
150

150 MHz IC=50mA, VCE=5V, f=50MHz

= 25°C)

amb

I

=100µA

C

I

=100µA

E

0.1

0.1

0.15

0.5VV

VCB=55V

µA

VEB=4V

µA

IC=0.1A, IB=0.5mA*
I

=1A, IB=10mA*

C

0.9 V IC=1A, IB=10mA*

0.9 V IC=1A, VCE=2V*

IC=100mA,VCE=2V*
I

=500mA, VCE =2V*

C

I

=1A,VCE=2V*

C

200 pF VEB=0.5V, f=1MHz

12 pF VCB=10V, f=1MHz

46
1440

nsnsIC=500mA, IB1=50mA

I

=50mA, VCC=10V

B2

ZHB6792

PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer

Transition Frequency f

Input Capacitance C

Output Capacitance C

Switching Times t

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

ibo

obo

on

t

off

= 25°C)

amb

-75 V

I

=-100µA

C

-70 V IC=-10mA*

-5 V

-0.1

-0.1

-0.45

-0.5VV

I

=-100µA

E

VCB=-40V

µA

VEB=-4V

µA

IC=-500mA, IB=-5mA*
I

=-1A, IB=-25mA*

C

-0.95 V IC=-1A, IB=-25mA*

-0.75 V IC=-1A, VCE=-2V*

300
250
200

800 IC=-10mA, VCE=-2V*

I

=-500mA, VCE=-2V*

C

I

=-1A, VCE=-2V*

C

100 MHz IC=-50mA, VCE=-5V

f=50MHz

225 pF VEB=-0.5V, f=1MHz

22 pF VCB=-10V, f=1MHz

35
750

nsnsIC=-500mA,

I

=-50mA

B1

I

=-50mA, VCC=-10V

B2

PNP TRANSISTOR

TYPICAL CHARACTERISTICS

ZHB6792

)
ts
ol

(V

-

at)

CE(s

V

in
Ga
sed

i

l
rma

No

-

FE

h

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

IC/IB=40

IC/IB=20

IC/IB=10

0.01 0.1 1 10

Collector Current (Amps)

IC -

T

=25°C

amb

VCE(sat) v IC

+100°C

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

+25°C

-55°C

0.01 0.1

1

VCE=2V

750

n

i

Ga

500

cal
ypi

T

-

250

FE

h

10

lts)

o
(V

-

E(sat)
C

V

)

ts
ol

(V

-

at)

BE(s

V

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

-55°C
+25°C
+100°C
+175°C

0.01 0.1 1 10

Collector Current (Amps)

IC -

IC/IB=100

VCE(sat) v IC

-55°C

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

+25°C
+100°C
+175°C

0.01 0.1 1 10

IC/IB=40

IC - Collector Current (Amps) IC - Collector Current (Amps)

hFE v IC VBE(sat) v IC

-55°C

1.6

1.4

1.2

lts)
o

1.0

(V

-

0.8

BE

0.6

V

0.4

0.2
0

+25°C
+100°C

0.01 0.1 1 10

Collector Current (Amps)

IC -

BE(on)

V

v IC

VCE=2V

ZHB6792

NPN TRANSISTOR

TYPICAL CHARACTERISTICS

0.8

ts)

0.6

ol
(V

-

0.4

CE(sat)

V

0.2

0

1.6

1.4

n

1.2

1.0

sed Gai

li

0.8

a

0.6

Norm

0.4

-

0.2

FE

h

0

IC/IB=200

IC/IB=100

IC/IB=10

0.01 0.1 1 10

IC - Collector Current (Amps)

CE(sat)

V

+100°C
+25°C

-55°C

0

0.01 0.1

Collector Current (Amps)

IC -

hFEv IC V

v IC

1

Tamb=25°C

VCE=2V

olts)

- (V

)
at

s
CE(

V

-55°C

0.8

0.6

0.4

0.2

0

+25°C
+100°C
+175°C

0.01 0.1 1 10

IC/IB=100

IC - Collector Current (Amps)

CE(sat)

V

-55°C
+25°C
+100°C
+175°C

0.01 0.1 1 10

Collector Current (Amps)

IC -

olts)

- (V

at)
s

BE(

V

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

1.5K

n

1K

cal Gai
ypi

500

- T

E
F

h

10

BE(sat)

v IC

IC/IB=100

v IC

olts)

- (V

BE

V

-55°C

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

+25°C
+100°C
+175°C

0

0.01 0.1 1 10

Collector Current (Amps)

IC -

V

BE(on)

v IC

VCE=2V

D

ZHB6792

He

E

5

b

6

7

8

o

4

3

e2

2

1

e1

A

A1

45°

c

Lp

3

Dim Millimetres Inches

Min Typ Max Min Typ Max

A – – 1.7 – – 0.067

A1 0.02 – 0.1 0.0008 – 0.004

b – 0.7 – – 0.028 –
c 0.24 – 0.32 0.009 – 0.013

D 6.3 – 6.7 0.248 – 0.264

E 3.3 – 3.7 0.130 – 0.145
e1 – 4.59 – – 0.180 –
e2 – 1.53 – – 0.060 –

He 6.7 – 7.3 0.264 – 0.287

Lp 0.9 – – 0.035 – –

Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

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This publication is issued to provide outline informati o n only which (unl ess agreed by the Company in wr iting) may not be used, a pplied
or reproduced for any purpose or form part of any order or contract or be reg arded as a re presentat ion relat ing to t h e product s or
services concerned. The Company reserves the right to alter without notice the specification, design, price or condit ions of supply of any
product or service .

Zetex plc 1998