Diodes ZHB6790 User Manual
SM-8 BIPOLAR TRANSISTOR H-BRIDGE
SM-8
(8 LEAD SOT223)
PRELIMINARY DATA SHEET ISSUE B JULY 1997
FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 40V supply
* 2 Amp continuous rating
PARTMARKING DETAIL ZHB6790
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPNs PNPs UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
j:Tstg
50 -50 V
40 -40 V
SCHEMATIC DIAGRAM CONNECTION DIAGRAM
ZHB6790
5-5 V
6-6 A
2-2 A
-55 to +150 °C
B1
B2
Q2 Q3
E1, E4
C1, C2
E2, E3
C1,C
Q4Q1
B4
E1,E
C3,C
C3, C4
B3
B
5
2
6
4
7
4
4
8
4
B
1
3
B
2
2
E2,E
3
1
B
3
ZHB6790
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single transistor on
= 25°C*
amb
Q1 and Q3 on or Q2 and Q4 on equally
Derate above 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
Thermal Resistance - Junction to Ambient*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
P
tot
1.25
2
10
16
100
62.5
mW/ °C
mW/ °C
°C/ W
°C/ W
W
W
100
D=t1
t1
80
60
40
20
0
100us
tP
tP
1ms 10ms 100ms 1s 10s 100s
Pulse Width
Transient Thermal Resistance
Single Transistor "On"
2.0
1.5
1.0
0.5
0
020
40 60 80 100 140120 160
T - Temperature (°C)
Derating curve
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
60
50
40
30
20
10
0
t1
1ms100us
tP
D=t1
tP
10ms
Pulse Width
1s100ms
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
10
Full Copper
1
Minimum
Copper
0.1
0.1
Pcb Area (inches squared)
110
Pd v Pcb Area Comparison
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
10s
Dual Transistors
Single Transi stor
Dual Transistors
Single Transistor
100s
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.
ZHB6790
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cutoff Current I
Emitter Cutoff Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
ibo
obo
on
t
off
= 25°C).
amb
-50 V
=-100µA
I
C
-40 V IC=-10mA*
-5 V
-0.1
-0.1
-0.14
-0.25
-0.45
-0.75
µA
µA
V
V
V
V
=-100µA
I
E
V
=-30V
CB
=-4V
V
EB
I
=-100mA, IB=-0.5mA*
C
=-500mA, IB=-5mA*
I
C
I
=-1A, IB=-10mA*
C
=-2A, IB=-50mA*
I
C
-1.0 V IC=-1A, IB=-10mA*
-0.75 V IC=-1A, VCE=-2V*
300
200
150
I
=-100mA, VCE=-2V
C
=-1A, VCE=-2V*
I
C
I
=-2A, VCE=-2V*
C
100 MHz IC=-50mA, VCE=-5V
f=50MHz
225 pF VEB=-0.5V, f=1MHz
24 pF VCB=-10V, f=1MHz
35
600
µs. Duty cycle ≤ 2%.
ns IC=-500mA,
I
= -50mA
B1
=-50mA, VCC=-10V
I
B2
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