Diodes ZHB6790 User Manual

SM-8 BIPOLAR TRANSISTOR H-BRIDGE

SM-8

(8 LEAD SOT223)

PRELIMINARY DATA SHEET ISSUE B JULY 1997

FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 40V supply
* 2 Amp continuous rating

PARTMARKING DETAIL  ZHB6790

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL NPNs PNPs UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

j:Tstg

50 -50 V

40 -40 V

SCHEMATIC DIAGRAM CONNECTION DIAGRAM

ZHB6790

5-5 V

6-6 A

2-2 A

-55 to +150 °C

B1

B2

Q2 Q3

E1, E4

C1, C2

E2, E3

C1,C

Q4Q1

B4

E1,E

C3,C

C3, C4

B3

B

5

2

6

4

7

4

4

8

4

B

1

3

B

2

2

E2,E

3

1

B

3

ZHB6790

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT

Total Power Dissipation at T
Any single transistor on

= 25°C*

amb

Q1 and Q3 on or Q2 and Q4 on equally

Derate above 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally

Thermal Resistance - Junction to Ambient*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally

P

tot

1.25
2

10
16

100

62.5

mW/ °C
mW/ °C

°C/ W
°C/ W

W
W

100

D=t1

t1

80

60

40

20

0
100us

tP

tP

1ms 10ms 100ms 1s 10s 100s

Pulse Width

Transient Thermal Resistance

Single Transistor "On"

2.0

1.5

1.0

0.5

0

020

40 60 80 100 140120 160

T - Temperature (°C)

Derating curve

D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse

60

50

40

30

20

10

0

t1

1ms100us

tP

D=t1

tP

10ms

Pulse Width

1s100ms

Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"

10

Full Copper

1

Minimum

Copper

0.1

0.1

Pcb Area (inches squared)

110

Pd v Pcb Area Comparison

D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse

10s

Dual Transistors

Single Transi stor

Dual Transistors 
Single Transistor

100s

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.

ZHB6790

PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector Cutoff Current I

Emitter Cutoff Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Input Capacitance C

Output Capacitance C

Switching Times t

*Measured under pulsed conditions. Pulse width=300

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

ibo

obo

on

t

off

= 25°C).

amb

-50 V

=-100µA

I

C

-40 V IC=-10mA*

-5 V

-0.1

-0.1

-0.14

-0.25

-0.45

-0.75

µA
µA

V
V
V
V

=-100µA

I

E

V

=-30V

CB

=-4V

V

EB

I

=-100mA, IB=-0.5mA*

C

=-500mA, IB=-5mA*

I

C

I

=-1A, IB=-10mA*

C

=-2A, IB=-50mA*

I

C

-1.0 V IC=-1A, IB=-10mA*

-0.75 V IC=-1A, VCE=-2V*

300
200
150

I

=-100mA, VCE=-2V

C

=-1A, VCE=-2V*

I

C

I

=-2A, VCE=-2V*

C

100 MHz IC=-50mA, VCE=-5V

f=50MHz

225 pF VEB=-0.5V, f=1MHz

24 pF VCB=-10V, f=1MHz

35
600

µs. Duty cycle ≤ 2%.

ns IC=-500mA,

I

= -50mA

B1

=-50mA, VCC=-10V

I

B2

ZHB6790

NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector Cutoff Current I

Emitter Cutoff Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Input Capacitance C

Output Capacitance C

Switching Times t

*Measured under pulsed conditions. Pulse width=300

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

ibo

obo

on

t

off

= 25°C).

amb

50 V

=100µA

I

C

40 V IC=10mA*

5V

0.1

µA

0.1

µA

V

0.1
V

0.16
V

0.5
V

0.35

=100µA

I

E

V

=35V

CB

=4V

V

EB

I

=100mA, IB=0.5mA*

C

=500mA, IB=2.5mA*

I

C

I

=1A, IB=5mA*

C

=2A, IB=30mA*

I

C

0.9 V IC=1A, IB=10mA*

0.73 V IC=1A, VCE=2V*

500
400
150

I

=100mA, VCE=2V*

C

=1A, VCE=2V*

I

C

I

=2A, VCE=2V*

C

150 MHz IC=50mA, VCE=5V

f=50MHz

200 pF VEB=0.5V, f=1MHz

16 pF VCB=10V, f=1MHz

33
1300

µs. Duty cycle ≤ 2%.

ns IC=500mA, IB!=50mA

I

=50mA, VCC=10V

B2

PNP TRANSISTOR

TYPICAL CHARACTERISTICS

ZHB6790

olts)
(V

-

V

in

alised Ga

Norm

-

h

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

IC/IB=100

IC/IB=40

IC/IB=10

0.01 0.1 1 10

T

=25°C

amb

IC- Collector Current (Amps)

CE(sat)

V

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

+100°C

+25°C

-55°C

0.01 0.1

IC-

Collector Current (Amps)

v IC

1

VCE=2V

750

n

Gai

500

cal
ypi

T

-

250

h

10

hFEv IC V

1.8

1.6

1.4

1.2

ts)

ol
V

1.0

(

-

0.8

0.6

V

0.4

0.2
0

-55°C

+25°C

+100°C

0.01 0.1 1 10

IC/IB=100

IC- Collector Current (Amps)

CE(sat)

V

1.6

1.4

1.2

ts)

1.0

- (Vol

0.8

0.6

0.4

V

0.2

0

+100°C

0.01 0.1 1 10

IC-

Collector Current (Amps)

-55°C

+25°C

BE(sat)

v IC

IC/IB=100

v IC

-55°C

1.6

1.4

1.2

ts)
ol

1.0

V
(

-

0.8

0.6

V

0.4

0.2
0

0

+25°C

+100°C

0.01 0.1 1 10

IC-

Collector Current (Amps)

BE(on)

V

v IC

VCE=2V

NPN TRANSISTOR

TYPICAL CHARACTERISTICS

ZHB6790

olts)
(V

-

V

n

i

alised Ga

Norm

-

h

T

=25°C

0.8

0.6

0.4

0.2

0

IC/IB=200

IC/IB=100

IC/IB=10

0.01 0.1 1 10

amb

0.8

ts)

0.6

ol
V
(

-

0.4

V

0.2

0

IC- Collector Current (Amps)

CE(sat)

V

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0

+100°C

+25°C

-55°C

0.01 0.1

IC-

Collector Current (Amps)

v IC

VCE=2V

1.5K

n

1K

Gai
cal
ypi

T

500

-

h

10

1

olts)

(V

-

V

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

hFEv IC V

-55°C

+25°C

+100°C

0.01 0.1 1 10

IC/IB=100

IC- Collector Current (Amps)

CE(sat)

V

+100°C

0.01 0.1 1 10

IC-

Collector Current (Amps)

-55°C

+25°C

BE(sat)

v IC

v IC

IC/IB=100

olts)
V
(

-

-55°C

1.6

1.4

1.2

1.0

0.8

V

0.6

0.4

0.2
0

0

+25°C

+100°C

0.01 0.1 1 10

VCE=2V

IC- Collector Current (Amps)

BE(on)

V

v IC

SAFE OPERATING AREA

ZHB6790

10

1

DC

100m

10m

100m 100

1s

100ms

10ms

1ms

100µs

110

VCE - Collector Emitter Voltage (V)

Safe Operating Area (Full Copper)

Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary
breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the
power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when
mounted on a 50mm x 50mm FR4 PCB. The two cases show:
i) full copper present and
ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to

see note below

10

1

DC

100m

10m

100m 100

1s

100ms

10ms

1ms

100µs

110

VCE - Collector Emitter Voltage (V)

Safe Operating Area (Minimum Copper)

see note below

the edge of the PCB.

For example, on a 50mm x 50mm full copper PCB, the ZHB6790 will safely dissipate 2W under
DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can
be tolerated for pulsed operation, while the shorter pulse widths (100µs and 1ms) being relevant
for assessment of switching conditions.

The ZHB6790 H-Bridge can be modelled within SPICE using the following transistor models
configured in the standard H-Bridge topology, as shown in the schematic diagram of this datasheet.

ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97
.MODEL H6790N NPN IS =2.505E-12 NF =1.0058 BF =1360 IKF=1.3 VAF=35
+ISE=.24E-12 NE =1.38 NR =1.001 BR =125 IKR=1 VAR=8 ISC=.435E-12
+NC =1.213 RB =.2 RE =.043 RC =.04 CJC=54.3E-12 MJC=.475 VJC=.765
+CJE=247E-12 TF =.851E-9 TR =15.7E-9

*

*
*ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97
.MODEL H6790P PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 VAF=23.5
+ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
+ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
+MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9

*

(C) 1997 ZETEX PLC
The copyright in these models and the design embodied belong to Zetex PLC (Zetex). They are supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact (including
this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no
condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of
any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,

D

ZHB6790

He

E

5

b

o

6

7

8

4

3

e2

2

1

e1

A

A1

45°

c

Lp

3

Dim Millimetres Inches

Min Typ Max Min Typ Max

A   1.7   0.067

A1 0.02  0.1 0.0008  0. 004

b  0.7   0.028 

c 0.24  0.32 0.009  0.013

D 6.3  6.7 0.248  0.264

E 3.3  3.7 0.130  0.145

e1  4.59   0.180 

e2  1.53   0.060 

He 6.7  7.3 0.264  0.287

Lp 0.9   0.035  

Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
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Telefon: [phone] Telephone: [phone] Telephone:[phone] Internet:
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.

Zetex plc 1997