Diodes ZHB6718 User Manual

SM-8 BIPOLAR TRANSISTOR H-BRIDGE

SM-8

(8 LEAD SOT223)

PRELIMINARY DATA SHEET ISSUE B - JULY 1997

FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 20V supply
* 2.5 Amp continuous rating

PARTMARKING DETAIL  ZHB6718

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL NPNs PNPs UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

j:Tstg

20 -20 V

20 -20 V

2.5 -2.5 A

ZHB6718

5-5 V

6-6 A

-55 to +150 °C

SCHEMATIC DIAGRAM

E1, E4

B1

B2

Q2 Q3

Q4Q1

C1, C2

E2, E3

C3, C4

B4

B3

CONNECTION DIAGRAM

C1,C

E1,E

C3,C

B

5

2

6

4

7

4

4

8

4

B

3

B

2

E2,E

1

B

1

2

3

3

ZHB6718

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT

Total Power Dissipation at T
Any single transistor on

= 25°C*

amb

Q1 and Q3 on or Q2 and Q4 on equally

Derate above 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally

Thermal Resistance - Junction to Ambient*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally

P

tot

R

th(j-amb)

1.25
2

10
16

100

62.5

mW/ °C
mW/ °C

°C/ W
°C/ W

W
W

100

D=t1

t1

80

60

40

20

0
100us

tP

tP

D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse

1ms 10ms 100ms 1s 10s 100s

Pulse Width

Transient Thermal Resistance

Single Transistor "On"

2.0

1.5

1.0

0.5

0

020

40 60 80 100 140120 160

T - Temperature (°C)

Derating curve

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.

 Two devices on is the standard operating condition for the bridge. Eg opposing NPN/PNP pairs
turned on.

60

50

40

30

20

10

0

t1

1ms100us

tP

D=t1

tP

10ms

Pulse Width

1s100ms

Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"

10

1

0.1

0.1

Minimum Copper

Pcb Area (inches squared)

Full Copper

110

Pd v PCB Area Comparison

D=1
D=0.5

D=0.2
D=0.1
D=0.05

Single Pulse

10s

Two devices on 

Single device on
Two devices on 

Single device on

100s

ZHB6718

NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer
Ratio

Transition
Frequency

Output Capacitance C

Turn-On Time t

Turn-Off Time t

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

obo

(on)

(off)

20 100 V

20 27 V IC=10mA*

5 8.3 V

200
300
200

100 140 MHz IC=50mA, VCE=10V

= 25°C ).

amb

=100µA

I

C

=100µA

I

E

100 nA VCB=16V

100 nA VEB=4V

8
70
130

100 nA V

15

mV

150

mV

200

mV

=16V

CES

IC=0.1A, IB=10mA*
I

=1A, IB=10mA*

C

I

=2.5A, IB=50mA*

C

0.89 1.0 V IC=2.5A, IB=50mA*

0.79 V IC=2.5A, VCE=2V*

400
450
360
180

IC=10mA, VCE=2V*

=100mA, VCE=2V*

I

C

=2A, VCE=2V*

I

C

I

=6A, VCE=2V*

C

f=100MHz

23 30 pF VCB=10V, f=1MHz

170 ns VCC=10V, IC=1A

I

=-IB2=10mA

400 ns

B1

ZHB6718

PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer
Ratio

Transition
Frequency

Output Capacitance C

Turn-On Time t

Turn-Off Time t

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

obo

(on)

(off)

-20 -65 V

-20 -55 V IC=-10mA*

-5 -8.8 V

300
300
150
35

150 180 MHz IC=-50mA, VCE=-10V

= 25°C ).

amb

=-100µA

I

C

=-100µA

I

E

-100 nA VCB=-15V

-100 nA VEB=-4V

-16

-130

-190

-100 nA V

-40

mV

-200

mV

-260

mV

=-15V

CES

IC=-100mA, IB=-10mA*
I

=-1A, IB=-20mA*

C

=-2.5A, IB=-200mA*

I

C

-0.98 -1.1 V IC=-2.5A, IB=-200mA*

0.85 V IC=-2.5A, VCE=-2V*

475
450
230
70
30

IC=-10mA, VCE=-2V*
I

=-100mA, VCE=-2V*

C

=-2A, VCE=-2V*

I

C

I

=-4A, VCE=-2V*

C

I

=-6A, VCE=-2V*

C

f=100MHz

21 30 pF VCB=-10V, f=1MHz

40 ns VCC=-10V, IC=-1A

=-20mA

I

670 ns

B1=IB2

ZHB6718

NPN TRANSISTOR
TYPICAL CHARACTERISTICS

1

+25 °C

100m

10m

1m

1m 10m 100m 1 10

IC- Collector Current (A)

CE(sat)

V

100°C

1.2

1.0

25°C

0.8

0.6

-55°C

0.4

0.2

0.0

10mA 100mA 1A

v I

C

Collector Current

C

hFEvs I

VCE=2V

C/IB

I
I

C/IB

IC/IB=10

=100
=50

0.4

IC/IB=50

0.3

0.2

0.1

0.0
1mA 10mA 100mA 1A

100°C

25°C

-55°C

10A

Collector Current

CE(sat)

V

1.2

IC/IB=50

450

225

0

10A1mA

1.0

0.8

0.6

0.4

0.2

0.0

-55°C

25°C

100°C

10mA 100mA 1A

vs I

C

10A1mA

Collector Current

BE(sat)

V

vs I

C

VCE=2V

1.0

0.8

0.6

0.4

0.2

0.0

-55°C

25°C

100°C

10mA 100mA 1A

10A1mA

Collector Current

BE(on)

V

vs I

C

PNP TRANSISTOR
TYPICAL CHARACTERISTICS

1

+25°C

100m

10m

1m

1m 10m 100m 1 10

IC- Collector Current (A)

V

v IC

CE(sat)

C/IB

I

C/IB

I
IC/IB=10

ZHB6718

0.6

C/IB

=30

I

0.5

0.40.4

0.3

=50
=30

0.2

0.1

0.0
10mA 100mA 1A

Collector Current

V

CE(sat)

100°C

25°C

-55°C

vs I

10A 1mA

C

100°C

1.4

1.2

25°C

1.0

0.8

0.6

-55°C

0.4

0.2

0.0
10mA 100mA 1A

Collector Current

hFEvs I

1.2

CE

=2V

V

VCE=2V

1.4

IC/IB=10

1.2

450

225

1.0

0.8

0.6

-55°C

25°C

100°C

0.4

0.2

0

10A1mA

0.0
10mA 100mA 1A

10A 1mA

Collector Current

V

vs I

C

BE(sat)

C

1.0

0.8

0.6

-55°C

25°C

100°C

0.4

0.2

0.0
10mA 100mA 1A

10A1mA

Collector Current

BE(on)

V

vs I

C

SAFE OPERATING AREA

ZHB6718

10

1

DC

100m

10m

100m 100

1s

100ms

10ms

1ms

100µs

VCE- Collector Emitter Voltage (V)

110

Safe Operating Area (Full Copper)

see note below

Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary
breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the
power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when
mounted on a 50mm x 50mm FR4 PCB. The two cases show:
i) full copper present and
ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to

10

1

DC

100m

10m

100m 100

1s

100ms

10ms

1ms

100µs

VCE- Collector Emitter Voltage (V)

110

Safe Operating Area (Minimum Copper)

see note below

the edge of the PCB.

For example, on a 50mm x 50mm full copper PCB, the ZHB6718 will safely dissipate 2W under
DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can
be tolerated for pulsed operation, while the shorter pulse widths (100µs and 1ms) being relevant
for assessment of switching conditions.

The ZHB6718 H-Bridge can be modelled within SPICE using the following transistor models
configured in the standard H-Bridge topology, as shown in the schematic diagram of this datasheet.

*ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97
.MODEL H6718N NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25
+ ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12
+ TF =0.95E-9 TR =2.25E-9
*
*
*ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97
.MODEL H6718P PNP IS =6.8E-13 BF =480 IKF =2 VAF =23
+ ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4
+ VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04
+ RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9
+TR =23.7E-9
*
(C) 1997 ZETEX PLC
The copyright in these models and the design embodied belong to Zetex PLC (Zetex). They are supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact (including
this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no
condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect
of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,
Oldham OL9 8NP, UK.

ZHB6718

He

E

5

b

D

3

6

7

8

o

45°

4

3

e2

2

1

Lp

e1

c

Dim Millimetres Inches

A

A1

Min Typ Max Min Typ Max

A   1.7   0.067

A1 0.02  0.1 0.0008  0.004

b  0.7   0.028 

c 0.24  0.32 0.009  0.013

D 6.3  6.7 0.248  0.264

E 3.3  3.7 0.130  0.145

e1  4.59   0.180 

e2  1.53   0.060 

He 6.7  7.3 0.264  0.287

Lp 0.9   0.035  

  15°   15°

α

 10°   10° 

β

Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

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or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of
any product or service.

Zetex plc 1997