Diodes ZDT749 User Manual

SM-8 DUAL PNP MEDIUM POWER

C

1

C

1

C

2

C

2

TRANSISTORS

ISSUE 1 - NOVEMBER 1995

B

1

E

1

B

2

E

2

PARTMARKING DETAIL  T749

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Operating and Storage Temperature Range T

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT

Total Power Dissipation at T
Any single die on
Both die on equally

Derate above 25°C*
Any single die on
Both die on equally

Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally

* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.

= 25°C*

amb

CBO

CEO

EBO

CM

C

j:Tstg

P

tot

ZDT749

SM-8

(8 LEAD SOT223)

-35 V

-25 V

-5 V

-6 A

-2 A

-55 to +150 °C

2.25

2.75

18
22

55.6

45.5

W
W

mW/ °C
mW/ °C

°C/ W
°C/ W

3 - 351

ZDT749 ZDT749

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cutoff
Current

Emitter Cutoff Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

V

CE(sat )

V

BE(sat )

V

BE(on)

h

FE

T

-35 V

=-100µA, I

I

C

-25 V IC=-10mA, IB=0*

-5 V

-0.1

-10

-0.1

-0.12

-0.23

-0.3

-0.5VV

µA
µA

µA

=-100µA, I

I

E

V

=-30V

CB

=-30V,T

V

CB

V

=-4V, IE=0

EB

IC=1A, IB=-100mA*

=2A, IB=-200mA*

I

C

-0.9 -1.25 V IC=1A, IB=-100mA*

-0.8 -1 V IC=-1A, VCE=-2V*

70
100
75
15

200
200
150
50

300

I

=-50mA, VCE=-2V*

C

I

=-1A, VCE=-2V*

C

=-2A, VCE=-2V*

I

C

I

=-6A, VCE=-2V*

C

100 160 MHz IC=-100mA, VCE=-5V

f=100MHz

E

C

amb

=0

=0

=100°C

Output Capacitance C

Switching Times t

obo

on

t

off

55 100 pF VCB=-10V f=1MHz

40 ns IC=-500mA, VCC=-10V

450 ns

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

I

B1=IB2

=-50mA