Page 1
SM-8 COMPLEMENTARY MEDIUM POWER
C
1
C
1
C
2
C
2
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
B
1
NPN
E
1
B
2
PNP
E
2
PARTMARKING DETAIL T6718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPN PNP UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature
Range
CM
C
T
CBO
CEO
EBO
j:Tstg
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die on
= 25°C*
amb
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
P
tot
20 -20 V
20 -20 V
ZDT6718
SM-8
(8 LEAD SOT223)
5-5 V
6-6 A
2-1.5 A
-55 to +150 °C
2
2.5
16
20
62.5
50
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 372
Page 2
ZDT6718
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current I
Collector Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
20 100 V
20 27 V IC=10mA*
58.3 V
200
300
200
100
100 140 MHz IC=50mA, VCE=10V
= 25°C).
amb
=100µA
I
C
=100µA
I
E
100 nA VCB=16V
100 nA VEB=4V
7
70
130
100 nA V
15
150
200
mV
mV
mV
=16V
CES
I
=0.1A, IB=10mA*
C
I
=1A, IB=10mA*
C
=2.5A, IB=50mA*
I
C
0.89 1.0 V IC=2.5A, IB=50mA*
0.79 1.0 V IC=2.5A, VCE=2V*
400
450
360
180
I
=10mA, VCE=2V*
C
I
=200mA, VCE=2V*
C
=2A, VCE=2V*
I
C
I
=6A, VCE=2V*
C
f=100MHz
Output Capacitance C
Turn-On Time t
Turn-Off Time t
obo
on
off
*Measured under pulsed conditions. Pulse width=300
23 30 pF VCB=10V, f=1MHz
170 VCC=10V, IC=1A
400
µs. Duty cycle ≤ 2%
For typical characteristics graphs see SuperSOT FMMT618 datasheet.
=-IB2=10mA
I
B1
Page 3
ZDT6718
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Collector Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
= 25°C unless otherwise stated).
amb
-20 -65 V
=-100µA
I
C
-20 -55 V IC=-10mA*
-5 -8.8 V
=-100µA
I
E
-100 nA VCB=-15V
-100 nA VEB=-4V
-16
-130
-145
-100 nA V
-40
mV
-200
mV
-220
mV
=-15V
CES
=-0.1A, IB=-10mA*
I
C
=-1A, IB=-20mA*
I
C
=-1.5A, IB=-50mA*
I
C
-0.87 -1.0 V IC=-1.5A, IB=-50mA*
-0.81 -1.0 V IC=-2A, VCE=-2V*
475
Static Forward
Current Transfer
h
FE
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
f
T
obo
on
off
*Measured under pulsed conditions. Pulse width=300
300
450
300
230
150
70
50
30
15
150 180 MHz IC=-50mA, VCE=-10V
21 30 pF VCB=-10V, f=1MHz
40 VCC=-10V, IC=-1A
670
µs. Duty cycle ≤ 2%
For typical characteristics graphs see SuperSOT FMMT718 datasheet.
3 - 3743 - 373
I
=-10mA, VCE=-2V*
C
=-100mA, VCE=-2V*
I
C
=-2A, VCE=-2V*
I
C
I
=-4A, VCE=-2V*
C
=-6A, VCE=-2V*
I
C
f=100MHz
I
=20mA
B1=IB2
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