Diodes ZDT6702 User Manual

SM-8 COMPLEMENTARY MEDIUM POWER

SM-8

(8 LEAD SOT223)

DARLINGTON TRANSISTORS

ISSUE 2  February 1997

ZDT6702

C

1

C

1

C

2

C

2

B

1

NPN

E

1

B

2

PNP

E

2

PARTMARKING DETAIL  T6702

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL NPN PNP UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Operating and Storage Temperature Range

CM

C

T

CBO

CEO

EBO

j:Tstg

80 -80 V

60 -60 V

10 -10 V

4-4 A

1.75 -1.75 A

-55 to +150 °C

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT

Total Power Dissipation at T Any single die on

= 25°C*

amb

Both die on equally

Derate above 25°C* Any single die on Both die on equally

Thermal Resistance - Junction to Ambient* Any single die on Both die on equally

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.

P

tot

2.25

2.75

18 22

55.6

45.5

W W

mW/ °C mW/ °C

°C/ W °C/ W

ZDT6702

NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

= 25°C unless otherwise stated).

amb

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current I

Colllector-Emitter Cutoff Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

Static Forward Current Transfer Ratio

Transition Frequency f

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

80 200 V

=100µA

I

C

60 100 V IC=10mA*

10 15 V

0.5 10 10

nA

µA

=100µA

I

E

=60V

V

CB

V

=60V,T

CB

0.1 10 nA VEB=8V

50 500 nA V

0.83

1.0

0.95

1.28VV

=60V

CE

IC=0.5A, IB=0.5mA* I

=1.75A, IB=2mA*

C

1.68 1.85 V IC=1.75A, IB=2mA*

1.55 1.75 V IC=1.75A, VCE=5V*

5K 5K

3.5K

0.5K

13K 13K 9K 2K

I

=10mA, VCE=5V

C

=500mA, VCE=5V

I

C

I

=2A, VCE=5V

C

=4A, VCE=5V*

I

C

140 MHz IC=100mA, VCE=10V

f=100MHz

amb

=100°C

Input Capacitance C

Output Capacitance C

Switching Times t

ibo

obo

on

t

off

70 pF VEB=500mV, f=1MHz

15 pF VCB=10V, f=1MHz

0.5

2.1

*Measured under pulsed conditions. Pulse width=300

µs

µs. Duty cycle ≤ 2%

=500mA, VCE=10V

I

C

I

=0.5mA

B1=IB2

ZDT6702

PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current I

Collector-Emitter Cutoff Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

Static Forward Current Transfer Ratio

Transition Frequency f

V

(BR)CBO

V

CEO(SUS)

V

(BR)EBO

I

CBO

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

-80 -120 V

-60 -90 V IC=-10mA*

-10 -15 V

2K 2K

1.5K 1K

= 25°C unless otherwise stated).

amb

=-100µA

I

C

=-100µA

I

E

-0.5 -10

-10

nA

µA

V

CB

V

CB

=-60V =-60V, T

-0.1 -10 nA VEB=-8V

-50 -500 nA V

-0.86

-1.05

-1.0

-1.28VV

=-60V

CE

IC=-0.5A, IB=-0.5mA* I

=-1.75A, IB=-2mA*

C

-1.7 -1.9 V IC=-1.75A, IB=-2mA*

-1.55 -1.85 V IC=-1.75A, VCE=-5V*

8K 8K 7K 4K

I

=-10mA, VCE=-5V*

C

=-500mA, VCE=-5V*

I

C

I

=-2A, VCE=-5V*

C

=-4A, VCE=-5V*

I

C

140 MHz IC=-100mA, VCE=-10V

f=100MHz

amb

=100°C

Input Capacitance C

Output Capacitance C

Switching Times t

ibo

obo

on

t

off

90 pF VEB=-0.5V, f=1MHz

25 pF VCE=-10V, f=1MHz

0.75

1.2

*Measured under pulsed conditions. Pulse width=300

µs

s. Duty cycle ≤ 2%

µ

I

=-0.5A, VCE=-10V

C

I

=-0.5mA

B1=IB2