Diodes ZDS1009 User Manual

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SM-8 COMPLEMENTARY CURRENT MIRROR
DESCRIPTION
The ZDS1009 current mirror has been developed specifically for high side, current sense plus level translation applications and as such will find a broad applications base including battery charge management, DC motor control and over current monitoring functions. It is of particular interest for current sense applications for feedback purposes in fast battery chargers for Li-Ion cell based systems.
FEATURES
Excellent Temperature Tracking Characteristics
Compact Cost Effective Solution
Simplifies Circuit Implementation
Single Cell Li-ion High Side Current sense chargers to Multi-cell Lead-Acid systems
Only 4 Connections required
ZDS1009
Thedevicefunctionsbysensing the voltagedeveloped across an external (user defined) high side current sense resistor, and by an arrangement of current mirrors refer this sensed voltage, with or without multiplication, to a low side referenced signal. This signal can then be used, for example, to close the control loop to a controller IC, for a DC-DC converter providing charge to a battery.
SM-8
(8 LEAD SOT223)
SCHEMATIC DIAGRAM
CONNECTION DIAGRAM
For balance R3=R4
R1=R3=R4=100
V
sensitivity = 100mV/A
sense
TYPICAL APPLICATION CIRCUIT
R
VIR
sense 2
R2=100m
4
=
R
1
eg
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ZDS1009
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT Maximum Operating Voltage V Maximum Voltage (E1-E2,E3-E4) V Peak Pulse Current I Continuous Current (E1-E4,E2-E3) I Total Power Dissipation at T
= 25°C* P
amb
Operating and Storage Temperature Range T
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
ELECTRICAL CHARACTERISTICS (at T
=25°C)
amb
y1-x1
E-E’ M C
tot
j:Tstg
Parameter Symbol Min Max Unit Conditions
Breakdown Voltage BV Breakdown Voltage BV Breakdown Voltage BV Breakdown Voltage BV Breakdown Voltage BV Breakdown Voltage BV Breakdown Voltage BV Leakage I Leakage I Leakage I Leakage I Leakage I Leakage I Leakage I
Y1 X1 Y1 E1 E2 E3 E4
Input Voltage V Input Voltage V Input Voltage V Input Voltage V Transfer
V
Characteristic Transfer
V
Characteristic Output Zero-Offset
V
Voltage
Y1-X1 X1-E1 Y1-E3 E1-Y1 E2-Y1 E3-X1 E4-X1
Y1-E2 Y1-E3 X1-E1 X1-E4 OUT
OUT
OFFSET
120 V
-30 V IX1=-10mA 30 V IY1=10mA
-12 V
-6 V 12 V 6VI
50 nA V
-10 10
µA µA
-100 nA V
-100 nA V 100 nA V 100 nA V
-1.45 -1.65 V IY1=-1A
1.45 1.75 V IY1=1A,VX1=V
-1.45 -1.75 V IX1=-1A,VX1=V
1.45 1.65 V IX1=1A
0.99 1.01 V See Fig 1.VCC=5V
1 mV See Fig 1.VCC=5V
4mV
120 V
10 V
4A 1A 2W
-55 to +150 °C
I
=100µA
Y1
I
=-100µA
E1
I
=-100µA
E2
I
=100µA
E3
=100uA
E4
=100V
Y1-X1
V
=-30V, Vy1=V
X1-E1
V
=30V,VX1=V
Y1-E3
=-8V
E1-Y1
=-4V
E2-Y1
=8V
E3-X1
=4V
E4-X1
R1=R3=R4=100,V
R1=R3=R4=100,V See Fig 2.V
R1=R3=R4=100
E3
Y1
Y1
=5V,R2<1
CC
E1
IN
IN
=1V
=5mV
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TYPICAL CHARACTERISTICS
ZDS1009
1.20
+25°C
Vin = 0.1V
1.15
1.10
1.05
1.00
Voltage Transfer
0.95 51015202530350
R=10 R=100 R=1k
Vcc - Supply Voltage(V)
V oltage Transfer v Supply Voltage
1.00
0.90
0.80
0.70
0.60
Voltage Transfer
T=25°C
0.50 100
R=10k
R=1k
R=100
Vin = 1V Vcc = 5V VAC= 0.1V
1k 10k 100k 1M
Frequency (Hz)
Voltage Transfer v Frequency Response
1.3
1.2
1.1
1.0
R=10
0.9
0.8
Voltage Transfer
0.7 10m
R=100
R=1k
100m 1 10
Vin - Input Voltage (V)
Voltage Transfer v Input Voltage
180
200
Phase Change (Degrees)
220 240 260
280 300
320 340 360
T = 25°C
1k
R=10k
R=1k
R = 100
Vin = 1V
Vcc = 5V
VAC= 0.1V
10k 100k 1M
Frequency (Hz)
Phase Change v Frequency Response
Vcc=5V+25°C
TEST CIRCUITS
Figure 1 Transfer Characteristic Test Circuit
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Figure 2 Output Zero-Offset Voltage Test Circuit
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ZDS1009
TYPICAL CHARACTERISTICS
1.4
+25°C
Iout = 0.95Iin Iout = 0.95Iin
1.2
1.0
0.8
Voltage - (V)
0.6
0.4 100µA
NPN
1mA 10mA 100mA 1A
Iin - Input Current (A)
Input/CutoffVoltagevI
1.6
1.4
1.2
1.0
0.8
0.6
Voltage (V)
0.4
0.2
Vcutoff Vin
0
-55
-35 -15 5 25 45 65 85 105 125
NPN
Temperature (°C)
Iin = 1mA Iout = 0.95mA
Input/Output Voltage v Temperature
Vin Vcutoff
in
1.4
+25°C
1.2
1.0
0.8
Voltage - (V)
0.6
0.4 100µ
PNP
1m 10m 100mA 1A
Iin - Input Current (A)
Input/Cutoff Voltage v Iin
1.6
1.4
1.2
1.0
0.8
0.6
Voltage (V)
0.4
0.2
Vcutoff
Vin
0
-60
-40 -20 0 20 40 60 80 100 120
PNP
Temperature (°C)
Iin = 1mA Iout = 0.95mA
Input/Output Voltage v Temperature
Vin Vcutoff
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
Current Transfer
0.96
0.95
+25°C
1m
NPN
1 10 100
Vce (V) - Collector-Emitter Voltage (V)
CurrentTransfervVce
10mA
100µA
1mA
4
1.05
25 C
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
Current Transfer
0.96
0.95
0.1
Vce - Collector-Emitter Voltage(V)
Current Transfer v Vce
PNP
10mA
1mA
100µA
110
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PACKAGE DIMENSIONS
He
E
5
6
7
8
o
45°
4
3
e2
e1
2
1
Lp
ORDERING INFORMATION
DEVICE PARTMARKING ZDS1009 S1009
ZDS1009
A
c
DIM Millimetres Inches
A1
Min Typ Max Min Typ Max
A - - 1.7 - - 0.067
A1 0.02 - 0.1 0.0008 - 0.004
b - 0.7 - - 0.028 -
c 0.24 - 0.32 0.009 - 0.013 D 6.3 - 6.7 0.248 - 0.264 E 3.3 - 3.7 0.130 - 0.145
e1 - 4.59 - - 0.180 ­e2 - 1.53 - - 0.060 -
He 6.7 - 7.3 0.264 - 0.287
Lp 0.9 - - 0.035 - -
α
β
- - 15° - - 15°
- 10° - - 10° -
Zetex plc. Fields New Road, Chadderton, Oldham, OL9 8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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