Diodes ZDS1009 User Manual

SM-8 COMPLEMENTARY CURRENT MIRROR

DESCRIPTION

The ZDS1009 current mirror has been developed
specifically for high side, current sense plus level
translation applications and as such will find a broad
applications base including battery charge
management, DC motor control and over current
monitoring functions. It is of particular interest for
current sense applications for feedback purposes in fast
battery chargers for Li-Ion cell based systems.

FEATURES

• Excellent Temperature Tracking Characteristics

• Compact Cost Effective Solution

• Simplifies Circuit Implementation

• Broad application base from

Single Cell Li-ion High Side Current sense chargers to
Multi-cell Lead-Acid systems

• Only 4 Connections required

ZDS1009

Thedevicefunctionsbysensing the voltagedeveloped
across an external (user defined) high side current
sense resistor, and by an arrangement of current
mirrors refer this sensed voltage, with or without
multiplication, to a low side referenced signal. This
signal can then be used, for example, to close the
control loop to a controller IC, for a DC-DC converter
providing charge to a battery.

SM-8

(8 LEAD SOT223)

SCHEMATIC DIAGRAM

CONNECTION DIAGRAM

For balance R3=R4

R1=R3=R4=100Ω

V

sensitivity = 100mV/A

sense

TYPICAL APPLICATION CIRCUIT

R

VIR

sense 2

R2=100mΩ

4

=

R

1

eg

ISSUE 2 - JANUARY 2000

1

ZDS1009

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Maximum Operating Voltage V
Maximum Voltage (E1-E2,E3-E4) V
Peak Pulse Current I
Continuous Current (E1-E4,E2-E3) I
Total Power Dissipation at T

= 25°C* P

amb

Operating and Storage Temperature Range T

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper
equal to 2 inches square.

ELECTRICAL CHARACTERISTICS (at T

=25°C)

amb

y1-x1

E-E’
M
C

tot

j:Tstg

Parameter Symbol Min Max Unit Conditions

Breakdown Voltage BV
Breakdown Voltage BV
Breakdown Voltage BV
Breakdown Voltage BV
Breakdown Voltage BV
Breakdown Voltage BV
Breakdown Voltage BV
Leakage I
Leakage I
Leakage I
Leakage I
Leakage I
Leakage I
Leakage I

Y1
X1
Y1
E1
E2
E3
E4

Input Voltage V
Input Voltage V
Input Voltage V
Input Voltage V
Transfer

V

Characteristic
Transfer

V

Characteristic
Output Zero-Offset

V

Voltage

Y1-X1
X1-E1
Y1-E3
E1-Y1
E2-Y1
E3-X1
E4-X1

Y1-E2
Y1-E3
X1-E1
X1-E4
OUT

OUT

OFFSET

120 V

-30 V IX1=-10mA
30 V IY1=10mA

-12 V

-6 V
12 V
6VI

50 nA V

-10
10

µA
µA

-100 nA V

-100 nA V
100 nA V
100 nA V

-1.45 -1.65 V IY1=-1A

1.45 1.75 V IY1=1A,VX1=V

-1.45 -1.75 V IX1=-1A,VX1=V

1.45 1.65 V IX1=1A

0.99 1.01 V See Fig 1.VCC=5V

1 mV See Fig 1.VCC=5V

4mV

120 V

10 V

4A
1A
2W

-55 to +150 °C

I

=100µA

Y1

I

=-100µA

E1

I

=-100µA

E2

I

=100µA

E3

=100uA

E4

=100V

Y1-X1

V

=-30V, Vy1=V

X1-E1

V

=30V,VX1=V

Y1-E3

=-8V

E1-Y1

=-4V

E2-Y1

=8V

E3-X1

=4V

E4-X1

R1=R3=R4=100Ω,V

R1=R3=R4=100Ω,V
See Fig 2.V

R1=R3=R4=100Ω

E3

Y1

Y1

=5V,R2<1Ω

CC

E1

IN

IN

=1V

=5mV

ISSUE 2 - JANUARY 2000

2