Diodes ZABG4002 User Manual

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ZABG4002

LOW POWER 4 STAGE FET LNA BIAS CONTROLLER

Summary

The ZABG4002 is a four stage depletion mode FET bias co ntroller intended pr imarily for satellite Lo w Noise Block’s (LNB’s), b ut
its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZABG4002 provid es each
FET with an independent protected negative gate voltage and positive drain voltage with user programmable drain current.
Combining an advanced IC process and packaging techniques, the ZABG4002 helps minimis e power consumption, component
cost and PCB area whilst enhancing overall reliability.

Features

• Four stage FET bias controller

• Operating range of 3.0V to 8.0V

• Low quiescent supply current, 1.2mA typical

• FET drain voltages set at 2.0V

• FET drain current selectable from 0 to 15mA

• Switchable FETs for power management

• Allows first and second stage FETs to be run at different

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(optimum) drain currents

• FET drain voltages and currents held stable over
temperature and Vcc variations

• FETs protected against overstress during power-up and
power-down.

• Internal negative supply generator allowing single supply

operation (available for external use)

• Low external component count

Applications

• Twin LNB’s

• Quad LNB’s

• US LNB’s

• Microwave links

• PMR and Cellular telephone systems

Pin Assignments

G2

V

CC

GND

G1

D1

V

CC

C

NB1

SUB

NB2

C

C

Top View

C

SUB

Bottom View

D3

R

G3D2
D4

G4
R

CAL1

CAL2

Single Universal LNB System Diagram

Gain stages

Gain stages
GaAs FET’s

GaAs FET’s

Vertical

Vertical

ZABG

ZABG

ZABG

ZABG

4002

4002

6002

6002

Horizontal

Horizontal

ZABG4002

Document number: DS32047 Rev. 2 - 2

Down

Down

Converter

Converter

IF Switc hing, gain

IF Switc hing, gain

and control

and control

ZXHF

ZXHF

ZXHF

ZXHF

5002

5002

5002

5002

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Device Description

The ZABG series of devices are designed to meet the bia s
requirements of GaAs and HEMT FETs commonly used i n
satellite receiver LNBs with a minimum of external
components whilst operating from a minimal voltage supp ly
and using minimal current.

The ZABG4002 provides four FET bias stages, arranged in
two pairs of two. Resistors connected to pins Rcal1 and
Rcal2 set the FET drain currents of each pair over the range
of 0 to 15mA, allowing input FETs to be biased for optimum
noise and amplifier FETs for optimum gain.

Drain voltages of all stages are set at 2.0V. The drain
supplies are current limited to approximately 5% above the
operating currents set by the Rcal resistors.

As an additional feature the Rcal pins can also be used as
logic inputs to disable pairs of FETs as part of a power
management scheme or simply an alternative to LNA
switching. Driven to a logic high (>3.0V), the inputs disable

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their associated FET bias stages by switching gate feeds to -

2.5V and drain feeds open circuit.

Depletion mode FETs require a negative voltage bias supply
when operated in grounded source circuits. The ZABG4002
includes an integrated low noise switched capac itor DC-DC
converter generating a regulated output of -2.5V to allow
single supply operation.

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ZABG4002

To facilitate the design of efficient low voltage 3.3V LNB
systems and to maintain compatibility with higher voltage
legacy designs, the ZABG4002 is capable of operating within
the supply of 3.0V to 8V.

These devices are unconditionally stable ov er the full working
temperature with the FETs in place, subject to the i nclusion of
the recommended gate and drain capacitors. These ensure
RF stability and minimal injected noise.

It is possible to use less than the devices full complement of
FET bias controls, unused drain and gate connections can be
left open circuit without affecting operation of the remaining
bias circuits.

To protect the external FETs the circuits have been designed
to ensure that, under any conditions including po wer up/down
transients, the gate drive from the bias circuits cannot exceed

-3V. Additionally each stage has its own individual current
limiter. Furthermore if the negative rail experiences a fault
condition, such as overload or short circuit, the drain supply to
the FETs will shut down avoiding excessive current flow.

To minimise PCB space ZABG4002 is packaged i n the 16 pin
3mm x 3mm QFN package.

Device operating temperature is -40°C to 85°C to suit a wide
range of environmental conditions.

ZABG4002

Document number: DS32047 Rev. 2 - 2

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Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.6 to +10 V
Supply Current 80 mA
Power Dissipation 500 mW
Operating Temperature Range -40 to +85 °C
Storage Temperature Range -40 to +150 °C

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ZABG4002

Electrical Characteristics (Measured at T

= 25°C, VCC = 3.3V (note 1), R

AMB

CAL

1 = R

2 = 39k (setting ID to 10mA) unless otherwise stated)

CAL

Parameter Conditions Symbol Min. Typ. Max. Unit

Operating Voltage Range
(note 1)

Supply Current
Substrate Voltage

Oscillator Frequency F

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V
I

= ID2 = ID3 = ID4 = 0 ICC 1.2 4.0 mA

D1

ID1 = ID2 = ID3 = ID4 = 10mA I
I

= 0 V

CSUB

I

= -200uA V

CSUB

3.0 8.0 V

CC

42 44 mA

CC(L

CSUB

-2.55 -2.0 V

CSUB(L

150 240 600 kHz

OSC

-3.0 -2.65 -2.0 V

Gate Characteristics

Gate (G1 to G4)
Current Range IG -100 +500 uA
Voltage Low ID = 12mA, IG = -10uA V
Voltage High ID = 8mA, IG = 0 V

I

= 0, IG = -10uA,

Voltage Disabled

D

V

RCAL

= 3.0V

-3.0 -2.5 -2.0 V

G(L

0 0.7 1.0 V

G(H

V

-3.0 -2.5 -2.0 V

G(DIS)

Drain Characteristics
Drain (D1 to D4)
Current Range ID 0 15 mA
Current Operating Standard Application Circuit I
Current Disabled VD = 0, V

= 3.0V I

RCAL

Voltage Operating ID = 10mA V
delta ID vs VCC V
delta ID vs TOP T
delta VD vs VCC V
delta VD vs TOP T
R

(1 and 2)

CAL

= 3.3 to 8.0V dID/dVCC 1.2 %/V

CC

= -40°C to +85°C dID/dTOP 0.05 %/°C

OP

= 3.3 to 8.0V dVD/dVCC 0.05 %/V

CC

= -40°C to +85°C dVD/dTOP 50 ppm/°C

OP

Disable Threshold V
Input Current V

= 3.0V I

RCAL

8 10 12 mA

D(OP

10 uA

D(DIS

1.8 2.0 2.2 V

D(OP

RCAL(DIS

RCAL(DIS

1.8 2.7 3.0 V

1.7 10 uA

Output Noise

C

Drain Voltage
Gate Voltage

Notes: 1. The two Vcc pins are internally connected, only one of the pins needs to be powered for the device to function. See applications section for further
information.

2. ESD sensitive, handling precautions are recommended.

3. The negative bias voltages are generated on-chip using an internal oscillator. Two external capacitors, C
purpose.

4. The package (QFN1633) exposed pad must either be connected to Csub or le ft open circuit.

5. The characteristics are measured using two external reference resistors R
sets the drain current of FETs 1 and 3, resistor R

6. Noise voltage measurements are made with FETs and gate and drain capacitors of value 10nF in place. Noise voltages are not measured in production.

GATE-GND

C

DRAIN-GND

C

GATE-GND

C

DRAIN-GND

ZABG4002

Document number: DS32047 Rev. 2 - 2

= 10nF,

= 10nF

= 10nF,

= 10nF

CAL2

V
V

and R

sets the drain currents of FETs 2 and 4.

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0.02 Vpk-pk

D(NOISE)

0.005 Vpk-pk

G(NOISE)

of value 39k, wired from pins R

CAL2

and C

NB

of value 47nF are required for this

SUB

to ground. Resistor R

CAL1/2

February 2010

© Diodes Incorporated

CAL1