Diodes VN10LF User Manual
SOT23 N-CHANNEL ENHANCEMENT
D
S
MODE VERTICAL DMOS FET
ISSUE 2 – JANUARY 1996
FEATURES
* 60 Volt V
*R
DS(on)
DS
=5Ω
VN10LF
PARTMARKING DETAIL – MY
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
= 25°C I
amb
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERI STIC S (at T
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate Body Leakage I
Zero Gate Voltage
Drain Current (1)
On State Drain
Current(1)
Static Drain Source On
State Resistance (1)
Forward
Transconductance
BV
V
GS(th)
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
DSS
60 V
0.8 2.5 V ID=1mA, VDS= V
100 nA
10
µA
750 mA VDS=15 V, VGS=10V
5.0
7.5
Ω
Ω
100 mS VDS=15V, ID=500mA
(1)(2)
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Time (2)(3) t
Turn-Off Time (2)(3) t
C
C
iss
oss
rss
(on)
(off)
310ns
410ns
60 pF
25 pF VDS=25 V, VGS=0V
5pF
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
3 - 308
60 V
150 mA
3A
± 20
330 mW
-55 to +150 °C
I
=100µA, VGS=0V
D
V
=± 20V, VDS=0V
GS
VDS=60 V, VGS=0V
V
=10V, ID=500mA
GS
V
=5V, ID=200mA
GS
f=1MHz
V
≈15V, ID=600mA
DD
G
V
GS
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