Diodes US1A, US1M User Manual
Features
• Glass Passivated Die Construction
• Ultra-Fast Recovery Time for High Efficiency
• Surge Overload Rating to 30A Peak
• High Current Capability
• Ideally Suited for Automated Assembly
• Lead Free Finish/RoHS Compliant (Note 1)
• Green Molding Compound (No Halogen and Antimony)
(Note 2)
Top View
Green
US1A - US1M
1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER
Mechanical Data
• Case: SMA
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
• Polarity: Cathode Band or Cathode Notch
• Weight: 0.064 grams (approximate)
Bottom View
Ordering Information (Note 3)
Part Number* Case Packaging
US1x-13-F SMA 5000/Tape & Reel
*x = Device type, e.g. US1A-13-F.
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
3. For packaging details, go to our website at http://www.diodes.com.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
Marking Information
US1A - US1M
Document number: DS16008 Rev. 10 - 2
YWW
US1x
US1x = Product type marking code, ex: US1A
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year (ex: 2 for 2002)
WW = Week code (01 to 53)
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October 2011
© Diodes Incorporated
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θ
r
RAG
R
C
T
F
C
URREN
T
NSTAN
T
N
O
US F
O
R
R
CUR
REN
T
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol US1A US1B US1D US1G US1J US1K US1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
V
V
DC Blocking Voltage (Note 4)
RMS Reverse Voltage
V
R(RMS
Average Rectified Output Current @ TT = 75°CIO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction to Terminal
Operating and Storage Temperature Range
R
T
J, TSTG
RRM
RWM
V
R
FSM
JT
US1A - US1M
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
1.0 A
30 A
30
-65 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol US1A US1B US1D US1G US1J US1K US1M Unit
Forward Voltage Drop @ IF = 1.0A VFM
Peak Reverse Current @ TA = 25°C
at Rated DC Blocking Voltage (Note 4) @ T
= 100°C
A
Reverse Recovery Time (Note 5)
Typical Total Capacitance (Note 6)
Notes: 4. Short duration pulse test used to minimize self-heating effect.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. Measured with I
= 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
F
I
C
RM
t
(A)
1.0
IED
I
E
0.5
E
1.0 1.3 1.7 V
r
T
50 75 ns
20 10 pF
5.0
100
μA
10
(A)
US1A - US1D
US1G
D
1.0
WA
US1J - US1M
0.1
E
A
O
I, AVE
0
25 50
T , TERMINAL TEMPERA TURE ( C)
75
T
100 125 150
°
Fig. 1 Forward Current Derating Curve
F
0.01
I, I
00.40.8
V , INSTANTANEOUS FOR WARD VOLTAGE (V)
F
Fig. 2 Typical Forward Charac t er i stics
1.2 1.6 2.0
US1A - US1M
Document number: DS16008 Rev. 10 - 2
2 of 4
www.diodes.com
October 2011
© Diodes Incorporated
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