Diodes UMG4N User Manual
Features
• Epitaxial Planar Die Construction
• Surface Mount Package Suited for Automated Assembly
• Simplifies Circuit Design and Reduces Board Space
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
UMG4N
DUAL NPN PRE-BIASED TRANSISTOR
Mechanical Data
• Case: SOT-353
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin Annealed Over Alloy 42
NEW PRODUCT
Leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air @TA = 25°C (Note 3)
Operating and Storage Temperature Range
321
4
TOP VIEW
5
Schematic and Pin Configuration
V
CBO
V
CEO
V
EBO
I
C
P
D
R
JA
θ
T
, T
j
STG
SOT-353
(3)
(2) (1)
R1
(4)
R1
(5)
50 V
50 V
5 V
100 mA
150 mW
833
-55 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Gain-Bandwidth Product (Note 4)
Input Resistance
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
R
FE
f
T
1
4. Characteristics of transistor. For reference only.
DS31207 Rev. 3 - 2 1 of 3
www.diodes.com
50
50
5.0
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.5
0.5
0.3 V
100 330 600
⎯
250
⎯
7 10 13
V
V
V
μA
μA
⎯
MHz
kΩ
I
= 50μA, IE = 0
C
I
= 1mA, IB = 0
C
I
= 50μA, IC = 0
E
V
= 50V, IE = 0
CB
V
= 4V, IC = 0
EB
I
= 10mA, IB = 1mA
C
V
= 5V, IC = 1mA
CE
V
= 10V, IE = -5mA, f = 100MHz
CE
⎯
© Diodes Incorporated
UMG4N
600
500
400
300
200
100
NEW PRODUCT
0
I , COLLECTOR CURRENT (mA)
Fig. 1 Typical DC Current Gain vs. Collector Current
C
0.1 1 10 100
Ordering Information (Note 5)
Device
UMG4N-7
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging Shipping
SOT-353 3000/Tape & Reel
Marking Information
Date Code Key
DS31207 Rev. 3 - 2 2 of 3
Year 2007 2008 2009 2010 2011 2012
Code U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
NN1
YM
NN1 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
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UMG4N
© Diodes Incorporated
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