Diodes UMC5N User Manual

g

Ω

Features

• Epitaxial Planar Die Construction

• Surface Mount Package Suited for Automated Assembly

• Simplifies Circuit Design and Reduces Board Space

• Lead Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Top View

SOT353

Bottom View

UMC5N

DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

Mechanical Data

• Case: SOT353

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin Annealed Over Alloy 42

Leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

32

4

1

5

Package Pin Out

uration

Confi

(3) (2)

Q

2

(4) (5)

(1)

Q

Q

1

1

R = 47k

1

R = 47k

2

Q

2

R = 4.7k

1

R = 10k

2

R1

R2

R2

R1

Device Schematic

Ω
Ω

Ω

Ordering Information (Note 3)

Part Number Case Packaging

UMC5N-7 SOT353 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

NP2

YM

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

UMC5N

Document number: DS31205 Rev. 4 - 2

www.diodes.com

NP2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)

1 of 5

November 2011

© Diodes Incorporated

)

)

θ

)

)

)

)

)

)

)

)

Maximum Ratings, Pre-Biased NPN Transistor, Q1 @T

= 25°C unless otherwise specified

A

UMC5N

Characteristic Symbol Value Unit

Supply Voltage
Input Voltage
Output Current
Collector Current

V

V

I

I

C(MAX

CC

O

IN

Maximum Ratings, Pre-Biased PNP Transistor, Q2 @T

= 25°C unless otherwise specified

A

50 V

-10 to +40 V
30 mA

100 mA

Characteristic Symbol Value Unit

Supply Voltage
Input Voltage
Output Current
Collector Current

V

V

I

I

C(MAX

CC

O

IN

-50 V

-20 to +7 V

-100 mA

-100 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at

http://www.diodes.com.

P

D

R

JA

T

, T

J

STG

150 mW
833

-55 to +150

°C/W

°C

Electrical Characteristics, Pre-Biased NPN Transistor, Q1 @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Input Voltage

(Note 5)

(Note 6)
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product (Note 7)
Input Resistance
Resistance Ratio

Notes: 5. The device is guaranteed to be in “OFF” state with V

6. The device is guaranteed to be in “ON” state with V

7. Characteristic of Transistor – for reference only.

V

I(OFF

V

I(ON

V

O(ON

I

⎯ ⎯

I

I

O(OFF

G

I

f

⎯

T

R

1

R

2/R1

up to 0.5V

I(OFF)

starting from 3V

I(ON)

0.5

⎯ ⎯
⎯

⎯ ⎯

0.1 0.3 V

⎯ ⎯

68

⎯ ⎯ ⎯ VO = 5V, IO = 5mA

250

32.9 47 61.1

0.8 1 1.2

3 V

0.18 mA

0.5

⎯

Electrical Characteristics, Pre-Biased PNP Transistor, Q2 @T

V

VCC = 5V, IO = 100μA
VO = 0.3V, IO = 2mA
IO/ II = 10mA/0.5 mA
VI = 5V

μA

MHz

kΩ

= 50V, VI = 0V

V

CC

VCE = 10V, IE = -5mA, f = 100MHz

⎯

⎯ ⎯

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Input Voltage
Output Voltage

Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product (Note 7)
Input Resistance
Resistance Ratio

Notes: 8. The device is guaranteed to be in “OFF” state with V

9. The device is guaranteed to be in “ON” state with V

10. Characteristic of Transistor – for reference only.

V

I(OFF

V

I(ON

V

O(ON

I

I

I

O(OFF

G

I

f

T

R

1

R

2/R1

up to -0.3V

I(OFF)

starting from -2.5V

I(ON)

-0.3

⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯

30

⎯

⎯ ⎯

-2.5 V

-0.1 -0.3 V

-1.8 mA

-0.5

⎯ ⎯ ⎯

250

⎯

3.29 4.7 6.11

1.7 2.1 2.6

V

VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
IO/ II = -10mA/-0.5 mA

= -5V

V

μA

I

VCC = -50V, VI = 0V
VO = -5V, IO = -10mA

MHz

VCE = -10V, IE = 5mA, f = 100MHz

kΩ

⎯ ⎯

⎯

UMC5N

Document number: DS31205 Rev. 4 - 2

2 of 5

www.diodes.com

November 2011

© Diodes Incorporated