Diodes UMC4N User Manual
g
Ω
Ω
Ω
Ω
Features
• Ultra-Small Surface Mount Package
• Epitaxial Planar Die Construction
• Surface Mount Package Suited for Automated Assembly
• Simplifies Circuit Design and Reduces Board Space
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
Top View Bottom View
SOT353
UMC4N
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
Mechanical Data
• Case: SOT353
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
• Weight: 0.006 grams (approximate)
32
4
Package Pin Out
Confi
1
5
uration
e3
(3)
Q
2
(4) (5)
(2)
R1
R2
R2
R1
Device Schematic
(1)
Q
1
Q
1
R = 47k
1
R = 47k
2
Q
2
R = 10k
1
R = 47k
2
Ordering Information (Notes 4 & 5)
Part Number Compliance Marking Reel size (inch) Tape width (mm) Quantity per reel
UMC4N-7 AEC-Q101 NP1 7 8 3,000
UMC4NQ-7 Automotive NP1 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
UMC4N
Document number: DS31203 Rev. 5 - 2
NP1
www.diodes.com
NP1 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
1 of 6
January 2013
© Diodes Incorporated
θ
)
)
)
)
)
)
)
)
UMC4N
Maximum Ratings, Pre-Biased NPN Transistor, Q1 (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Collector Current
V
CC
V
IN
I
O
I
C
Maximum Ratings, Pre-Biased PNP Transistor, Q2 (@T
= +25°C unless otherwise specified.)
A
50 V
-10 to +40 V
30 mA
100 mA
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Collector Current
V
CC
V
IN
I
O
I
C
-50 V
-40 to +6 V
-100 mA
-100 mA
Thermal Characteristics (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Operating and Storage Temperature Range
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
P
D
R
JA
T
, T
J
STG
150 mW
833
-55 to +150
°C/W
°C
Electrical Characteristics, Pre-Biased NPN Transistor, Q1 (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
(Note 7)
(Note 8)
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product (Note 9)
Input Resistance
Resistance Ratio
Note: 7. The device is guaranteed to be in “OFF” state with V
8. The device is guaranteed to be in “ON” state with V
9. Characteristic of Transistor – for reference only.
0.5
V
I(OFF
V
⎯ ⎯
I(ON
V
⎯
O(ON
I
⎯ ⎯
I
I
⎯ ⎯
O(OFF
G
I
f
⎯
T
R
1
R
2/R1
up to 0.5V
I(OFF)
starting from 3V
I(ON)
68
32.9 47 61.1
0.8 1 1.2
⎯ ⎯
3 V
0.1 0.3 V
0.18 mA
0.5
⎯ ⎯ ⎯ VO = 5V, IO = 5mA
250
⎯
V
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 2mA
IO / II = 10mA/0.5 mA
VI = 5V
μA
VCC = 50V, VI = 0V
MHz
VCE = 10V, IE = -5mA, f = 100MHz
kΩ
⎯ ⎯
⎯
Electrical Characteristics, Pre-Biased PNP Transistor, Q2 (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
(Note 10)
(Note 11)
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product (Note 12)
Input Resistance
Resistance Ratio
Note: 10. The device is guaranteed to be in “OFF” state with V
11. The device is guaranteed to be in “ON” state with V
12. Characteristic of Transistor – for reference only.
V
I(OFF
V
I(ON
V
O(ON
I
⎯ ⎯
I
I
O(OFF
G
I
f
⎯
T
R
1
R
2/R1
I(OFF)
starting from -1.4V
I(ON)
UMC4N
Document number: DS31203 Rev. 5 - 2
-0.3
⎯ ⎯
⎯ ⎯
⎯
-0.1 -0.3 V
⎯ ⎯
68
⎯ ⎯ ⎯ VO = -5V, IO = -5mA
250
7 10 13
3.7 4.7 5.7
up to -0.3V
2 of 6
www.diodes.com
-1.4 V
-0.88 mA
-0.5
⎯
V
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -1mA
IO/ II = -5mA/-0.25 mA
VI = -5V
μA
VCC = -50V, VI = 0V
MHz
VCE = -10V, IE = 5mA, f = 100MHz
kΩ
⎯ ⎯
⎯
January 2013
© Diodes Incorporated
Loading...