Diodes UMC4N User Manual

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g
Ω
Ω
Ω
Ω
Features
Ultra-Small Surface Mount Package
Epitaxial Planar Die Construction
Surface Mount Package Suited for Automated Assembly
Simplifies Circuit Design and Reduces Board Space
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Top View Bottom View
SOT353
UMC4N
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
Mechanical Data
Case: SOT353
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
Weight: 0.006 grams (approximate)
32
4
Package Pin Out
Confi
1
5
uration
e3
(3)
Q
2
(4) (5)
(2)
R1
R2
R2
R1
Device Schematic
(1)
Q
1
Q
1
R = 47k
1
R = 47k
2
Q
2
R = 10k
1
R = 47k
2
Ordering Information (Notes 4 & 5)
Part Number Compliance Marking Reel size (inch) Tape width (mm) Quantity per reel
UMC4N-7 AEC-Q101 NP1 7 8 3,000
UMC4NQ-7 Automotive NP1 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
UMC4N
Document number: DS31203 Rev. 5 - 2
NP1
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NP1 = Product Type Marking Code YM = Date Code Marking
YM
Y = Year (ex: A = 2013) M = Month (ex: 9 = September)
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© Diodes Incorporated
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θ
)
)
)
)
)
)
)
)
UMC4N
Maximum Ratings, Pre-Biased NPN Transistor, Q1 (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Supply Voltage Input Voltage Output Current Collector Current
V
CC
V
IN
I
O
I
C
Maximum Ratings, Pre-Biased PNP Transistor, Q2 (@T
= +25°C unless otherwise specified.)
A
50 V
-10 to +40 V 30 mA
100 mA
Characteristic Symbol Value Unit
Supply Voltage Input Voltage Output Current Collector Current
V
CC
V
IN
I
O
I
C
-50 V
-40 to +6 V
-100 mA
-100 mA
Thermal Characteristics (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Air (Note 6) Operating and Storage Temperature Range
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
P
D
R
JA
T
, T
J
STG
150 mW 833
-55 to +150
°C/W
°C
Electrical Characteristics, Pre-Biased NPN Transistor, Q1 (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
(Note 7)
(Note 8) Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product (Note 9) Input Resistance Resistance Ratio
Note: 7. The device is guaranteed to be in “OFF” state with V
8. The device is guaranteed to be in “ON” state with V
9. Characteristic of Transistor – for reference only.
0.5
V
I(OFF
V
I(ON
V
O(ON
I
I
I
O(OFF
G
I
f
T
R
1
R
2/R1
up to 0.5V
I(OFF)
starting from 3V
I(ON)
68
32.9 47 61.1
0.8 1 1.2
3 V
0.1 0.3 V
0.18 mA
0.5
VO = 5V, IO = 5mA
250
V
VCC = 5V, IO = 100μA VO = 0.3V, IO = 2mA IO / II = 10mA/0.5 mA VI = 5V
μA
VCC = 50V, VI = 0V
MHz
VCE = 10V, IE = -5mA, f = 100MHz
kΩ
Electrical Characteristics, Pre-Biased PNP Transistor, Q2 (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
(Note 10)
(Note 11) Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product (Note 12) Input Resistance Resistance Ratio
Note: 10. The device is guaranteed to be in “OFF” state with V
11. The device is guaranteed to be in “ON” state with V
12. Characteristic of Transistor – for reference only.
V
I(OFF
V
I(ON
V
O(ON
I
I
I
O(OFF
G
I
f
T
R
1
R
2/R1
I(OFF)
starting from -1.4V
I(ON)
UMC4N
Document number: DS31203 Rev. 5 - 2
-0.3
-0.1 -0.3 V
68
VO = -5V, IO = -5mA
250
7 10 13
3.7 4.7 5.7
up to -0.3V
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-1.4 V
-0.88 mA
-0.5
V
VCC = -5V, IO = -100μA VO = -0.3V, IO = -1mA IO/ II = -5mA/-0.25 mA VI = -5V
μA
VCC = -50V, VI = 0V
MHz
VCE = -10V, IE = 5mA, f = 100MHz
kΩ
January 2013
© Diodes Incorporated
Page 3
Typical Electrical Characteristics (@T
= +25°C unless otherwise specified.)
A
1,000
100
T = 150°C
A
T = 85°C
A
10
1
Fig. 1 Typical DC Current Gain vs. Output Current (Q1, NPN)
10
V = 5V
T = 25°C
A
T = -55°C
A
V = 5V
I , OUTPUT CURRENT (mA)
O
CC
O
I/I = 20
OI
T = 150°C
T = -55°C
A
A
T = 25°C
A
T = 85°C
A
0.1 1 10 100
10
UMC4N
T = -55°C
A
1
T = 25°C
A
T = 85°C
A
T = 150°C
A
0.1
0.01 0.1 1 10
T = -55°C
A
1
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 0.3V
O
0.1
0.01 0.1 1 10 100
UMC4N
Document number: DS31203 Rev. 5 - 2
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UMC4N
1
I/I = 20
OI
T = 150°C
T = -55°C
A
A
T = 25°C
A
V = -0.3V
O
T = 85°C
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V = -5V
O
0.1
A
0.01
0.1 1 10 100
-I , OUTPUT CURRENT (mA)
O
Fig. 6 Typical Output Voltage
vs. Output Current (Q2, PNP)
10
V = -5V
CC
10
1
0.1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
1
0.1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
0.01 0.1 1 10
-I , OUTPUT CURRENT (mA)
O
Fig. 7 Typical Input Off Voltage
vs. Output Current (Q2, PNP)
-I , OUTPUT CURRENT (mA)
O
Fig. 8 Typical Input ON Voltage
vs. Output Current (Q2, PNP)
UMC4N
Document number: DS31203 Rev. 5 - 2
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Page 5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
K
J
A
Dim Min Max
B C
H
M
D
L
F
A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
G
Z
Y
X
C2C2
Dimensions Value (in mm)
Z 2.5
G 1.3
C1
X 0.42
Y 0.6 C1 1.9 C2 0.65
UMC4N
SOT353
0° 8°
UMC4N
Document number: DS31203 Rev. 5 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
UMC4N
UMC4N
Document number: DS31203 Rev. 5 - 2
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