DIODES TB2600M, TB0900M, TB0720M, TB1500M, TB1300M Datasheet

50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE

B

A

C

D

F

H

E

G

0

TIME

100

50

0

I , PEAK PULSE CURRENT (%)

PP

Peak Value (I )

pp

Half Value

t = rise time to peak value

r

t = decay time to half value

p

t

r

t

p

UNDE

R D

E

V

E

L

O

P

M

E

NT

TCUDORP WEN

Features

· 50A Peak Pulse Current @ 10/1000ms

· 250A Peak Pulse Current @ 8/20ms

· 58 - 320V Stand-Off Voltages

· Oxide-Glass Passivated Junction

· Bi-Directional Protection In a Single Device

· High Off-State impedance and Low On-State

Voltage

Mechanical Data

· Case: SMB, Molded Plastic

· Plastic Material: UL Flammability

Classification Rating 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solder Plated Terminal -

Solderable per MIL-STD-202, Method 208

· Polarity: None; Bi-Directional Devices Have No
Polarity Indicator

· Weight: 0.093 grams (approx.)

· Marking: Date Code and Marking Code (See Page 4)

· Ordering Information: See Page 4

TB0640M - TB3500M

PROTECTIVE DEVICE

SMB

Dim Min Max

4.06 4.57

A

3.30 3.94

B

1.96 2.21

C

0.15 0.31

D

5.21 5.59

E

0.05 0.20

F

2.01 2.62

G

0.76 1.52

H

All Dimensions in mm

Maximum Ratings

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Non-Repetitive Peak Impulse Current @10/1000us

Non-Repetitive Peak On-State Current @8.3ms (one-half cycle)

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Lead

Thermal Resistance, Junction to Ambient

Typical Positive Temperature Coefficient for Breakdown Voltage

@ TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

I

pp

I

TSM

T

j

T

STG

R

qJL

R

qJA

DVBR/DT

j

50 A

30 A

-40 to +150 °C

-55 to +150 °C

20 °C/W

100 °C/W

0.1 %/°C

Maximum Rated Surge Waveform

Waveform Standard Ipp (A)

2/10 us GR-1089-CORE 300

8/20 us IEC 61000-4-5 250

10/160 us FCC Part 68 150

10/700 us ITU-T, K20/K21 100

10/560 us FCC Part 68 75

10/1000 us GR-1089-CORE 50

DS30361 Rev. 2 - 1 1 of 4 TB0640M - TB3500M

I

BO

V

BR

V

DRM

V

T

V

BO

I

H

I

V

I

BR

I

DRM

I

PP

TCUDORP WEN

UNDE

R

D

E

V

E

L

O

P

M

E

NT

Electrical Characteristics

@ TA = 25°C unless otherwise specified

Part Number

TB0640M

TB0720M

TB0900M

TB1100M

TB1300M

TB1500M

TB1800M

TB2300M

TB2600M

TB3100M

TB3500M

Rated

Repetitive

Off-State

Voltage

V

DRM

58 5 77 3.5 50 800 150 800 140 T064M

65 5 88 3.5 50 800 150 800 140 T072M

75 5 98 3.5 50 800 150 800 140 T090M

90 5 130 3.5 50 800 150 800 90 T110M

120 5 160 3.5 50 800 150 800 90 T130M

140 5 180 3.5 50 800 150 800 90 T150M

160 5 220 3.5 50 800 150 800 90 T180M

190 5 265 3.5 50 800 150 800 60 T230M

220 5 300 3.5 50 800 150 800 60 T260M

275 5 350 3.5 50 800 150 800 60 T310M

320 5 400 3.5 50 800 150 800 60 T350M

Off-State

Leakage

Current @

V

DRM

(V) I

DRM

Symbol Parameter

V

DRM

I

DRM

V

BR

I

BR

V

BO

I

BO

I

H

V

T

I

PP

C

O

Breakover

Voltage

(uA) VBO (V) VT (V)

On-State

Voltage

@ IT = 1A

Breakover

Current

I

BO

Min

(mA)

Stand-off Voltage

Leakage current at stand-off voltage

Breakdown voltage

Breakdown current

Breakover voltage

Breakover current

Holding current NOTE: 1

On state voltage

Peak pulse current

Off-state capacitance NOTE: 2

Holding Current

Max

(mA)

Min

(mA)

I

H

Max (mA)

Off-State

Capacitance

CO (pF)

Marking Code

Notes: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.

2. Off-state capacitance measured at f = 1.0MHz, 1.0V

signal, VR = 2VDC bias.

RMS

DS30361 Rev. 2 - 1 2 of 4 TB0640M - TB3500M