DIODES TB3100H, TB2600H, TB0900H, TB1800H, TB1500H Datasheet

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR

B

A

C

D

F

H

E

G

0

TIME

100

50

0

I , PEAK PULSE CURRENT (%)

PP

Peak Value (I )

pp

Half Value

t = rise time to peak value

r

t = decay time to half value

p

t

r

t

p

TCUDORP WEN

Features

· 100A Peak Pulse Current @ 10/1000ms

· 400A Peak Pulse Current @ 8/20ms

· 58 - 320V Stand-Off Voltages

· Oxide-Glass Passivated Junction

· Bi-Directional Protection In a Single Device

· High Off-State impedance and Low On-State

Voltage

Mechanical Data

· Case: SMB, Molded Plastic

· Plastic Material: UL Flammability

Classification Rating 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solder Plated Terminal -

Solderable per MIL-STD-202, Method 208

· Polarity: None; Bi-Directional Devices Have No
Polarity Indicator

· Weight: 0.093 grams (approx.)

· Marking: Date Code & Marking Code (See Page 4)

· Ordering Information: See Page 4

TB0640H - TB3500H

SURGE PROTECTIVE DEVICE

SMB

Dim Min Max

4.06 4.57

A

3.30 3.94

B

1.96 2.21

C

0.15 0.31

D

5.21 5.59

E

0.05 0.20

F

2.01 2.62

G

0.76 1.52

H

All Dimensions in mm

Maximum Ratings

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Non-Repetitive Peak Impulse Current @10/1000us

Non-Repetitive Peak On-State Current @8.3ms (one-half cycle)

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Lead

Thermal Resistance, Junction to Ambient

Typical Positive Temperature Coefficient for Breakdown Voltage

@ TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

I

pp

I

TSM

T

j

T

STG

R

qJL

R

qJA

DVBR/DT

j

100 A

50 A

-40 to +150 °C

-55 to +150 °C

20 °C/W

100 °C/W

0.1 %/°C

Maximum Rated Surge Waveform

Waveform Standard Ipp (A)

2/10 us GR-1089-CORE 500

8/20 us IEC 61000-4-5 400

10/160 us FCC Part 68 250

10/700 us ITU-T, K20/K21 200

10/560 us FCC Part 68 160

10/1000 us GR-1089-CORE 100

DS30360 Rev. 3 - 2 1 of 4 TB0640H - TB3500H

I

BO

V

BR

V

DRM

V

T

V

BO

I

H

I

V

I

BR

I

DRM

I

PP

TCUDORP WEN

Electrical Characteristics

@ TA = 25°C unless otherwise specified

Part Number

TB0640H

TB0720H

TB0900H

TB1100H

TB1300H

TB1500H

TB1800H

TB2300H

TB2600H

TB3100H

TB3500H

(V) I

Off-State

Leakage

Current @

V

DRM

DRM

Breakover

Voltage

(uA) VBO (V) VT (V)

On-State

Voltage

@ IT = 1A

Breakover

Current

Min

(mA)

I

BO

Max (mA)

Holding Current

I

H

Min

(mA)

Max (mA)

Off-State

Capacitance

CO (pF)

Rated

Repetitive

Off-State

Voltage

V

DRM

58 5 77 3.5 50 800 150 800 200 T064H

65 5 88 3.5 50 800 150 800 200 T072H

75 5 98 3.5 50 800 150 800 200 T090H

90 5 130 3.5 50 800 150 800 120 T110H

120 5 160 3.5 50 800 150 800 120 T130H

140 5 180 3.5 50 800 150 800 120 T150H

160 5 220 3.5 50 800 150 800 120 T180H

190 5 265 3.5 50 800 150 800 80 T230H

220 5 300 3.5 50 800 150 800 80 T260H

275 5 350 3.5 50 800 150 800 80 T310H

320 5 400 3.5 50 800 150 800 80 T350H

Symbol Parameter

V

I

DRM

DRM

V

I

BR

V

I

BO

I

V

I

PP

C

BR

BO

H

T

O

Stand-off Voltage

Leakage current at stand-off voltage

Breakdown voltage

Breakdown current

Breakover voltage

Breakover current

Holding current NOTE: 1

On state voltage

Peak pulse current

Off-state capacitance NOTE: 2

Marking

Code

Notes: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.

2. Off-state capacitance measured at f = 1.0MHz, 1.0V

signal, VR = 2VDC bias.

RMS

DS30360 Rev. 3 - 2 2 of 4 TB0640H - TB3500H