Diodes SXTA42 User Manual
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996 ✪
SXTA42
COMPLEMENTARY TYPE SXTA92
C
PARTMARKING DETAIL SID
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
300 V
300 V IC=1mA, IB=0*
6V
0.1
0.1
0.5 V IC=20mA, IB=2mA*
0.9 V IC=20mA, IB=2mA*
25
40
40
Transition
Frequency
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
For typical characteristics graphs see FMMTA42 datasheet.
f
T
obo
50 MHz IC=10mA, VCE=20V
6pFV
µs. Duty cycle ≤2%
300 V
300 V
6V
500 mA
1W
-65 to +150 °C
=100µA, I
I
C
=100µA, I
I
E
V
µA
µA
=200V, IE=0
CB
V
=6V, IC=0
EB
I
=1mA, VCE=10V*
C
I
=10mA, VCE=10V*
C
=30mA, VCE=10V*
I
C
f=20MHz
=20V, f=1MHz
CB
=0
E
=0
C
E
C
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