Diodes SM12 User Manual

Features
300 Watts Peak Pulse Power (tp = 8x20μs)
IEC 61000-4-2 (ESD): Air – 15kV, Contact – 8kV
Typically Used at Computer Interface Protection, Data Line and
Power Line Protection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT23
Top View
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.0089 grams (approximate)
12
Device Schematic
DUAL COMMON ANODE TVS DIODE
3
SM12
Ordering Information (Note 4)
Part Number Case Packaging
SM12-7 SOT23 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZBM
YM
SM12
Document number: DS35948 Rev. 6 - 2
ZBM = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Z = 2012) M = Month (ex: 9 = September)
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November 2012
© Diodes Incorporated
t
r
θ
P, P
OWER
P
T
O
P
P
U
RATIN
G
O
F
Maximum Ratings (@T
= 25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation PPP 300 W 8/20μs, Per Fig. 3 Peak Pulse Current ESD Protection – Contact Discharge ESD Protection – Air Discharge Electrical Fast Transient Current
I
PP
V
ESD_Contac
V
ESD_Ai
I
EFT
12 A ±8 kV
±15 kV
40 A
8/20μs, Per Fig. 3 Standard IEC 61000-4-2(ESD) Standard IEC 61000-4-2(ESD) Standard IEC 61000-4-4(EFT)
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
250 mW 500
-65 to +150
SM12
°C/W
°C
Electrical Characteristics (@T
= 25°C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage VRWM - - 12.0 V ­Reverse Current (Note 6) IR - - 1.0 μA Reverse Breakdown Voltage VBR 13.3 - 15.75 V Reverse Clamping Voltage Capacitance
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
V
CL
C
T
300 250
Note 5
200
N (mW)
175
- - 19 V
- 95 - pF
100
75
%
V
= V
RWM
= 12.0V
R
I
= 1mA
R
IPP = 1A, tp = 8/20μs VR = 0V, f = 1MHz, Pin 1 to 3
I A
150
125
50
DISSI
100
D
75 50
LSE DE
EAK
25
PEAK POWER OR CURRENT
25
0
0
25
50 75
T , AMBIENT TEMPERATURE ( C)
A
125 175
100
150
°
Figure 1 Power Derating Curve
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
175 200
Figure 2 Power Dissipation vs. Ambient Temperature
SM12
Document number: DS35948 Rev. 6 - 2
2 of 5
www.diodes.com
November 2012
© Diodes Incorporated
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