Diodes SDMP0340LT User Manual

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SDMP0340LT /LST /LCT /LAT
SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Forward Voltage Drop
Guard Ring Die Construction for Transient Protection
Ideal for Low Logic Level Applications
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Top View
SDMP0340LT SDMP0340LAT SDMP0340LCT SDMP0340LST

Mechanical Data

Case: SOT-523
Case Material: Molded Plastic. UL Flammability Classification
Rating: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
Maximum Ratings @T
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Forward Continuous Current (Note 1) Non-Repetitive Peak Forward Surge Current @8.3ms
Single half sine-wave superimposed on rated load
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 2) Forward Voltage Drop Leakage Current (Note 2) Total Capacitance
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
SDMP0340LT /LST /LCT /LAT
Document number: DS30266 Rev. 11 - 2
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
= 25°C unless otherwise specified
A
V
RRM
V
RWM
VR
V
R(RMS)
IFM
I
FSM
PD
R
JA
θ
T
J, TSTG
V
(BR)R
VF
IR
CT
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40
⎯ ⎯ ⎯ ⎯
290 370 mV
40 V
28 V 30 mA
200 mA
150 mW 833
-40 to +125
1.0
2
°C/W
°C
V
I
10uA
R =
IF = 1mA
μA
VR = 10V
pF
VR = 1V, f = 1.0 MHz
July 2008
© Diodes Incorporated
N
T
N
TANEO
US FORWAR
D CUR
REN
T
TANT
O
US R
R
C
URRENT
C, TOT
CAPACITANC
F
R
R
REC
OVER
Y T
P, P
O
R
P
T
O
N
SDMP0340LT /LST /LCT /LAT
1
(A)
100m
10m
1m
T = 75ºC
A
(A)
SE
EVE
100n
ANE
A
10n
S
F
I, I
0 0.2 0.4 0.6
V , INSTANTA NEOUS FORWA RD VOLTAGE (V)
F
100
)
0.8 1.0
1.2
Fig. 1 Typical Forward C haracteristics
f = 1 MHz
1.4
R
I, INS
1n
0 5 10 15 20 25
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics
10
5
30
35
E (p
AL
(mW) I
A
DISSI WE
T
10
1
0.1 0
510
V , DC REVERSE VOLTAGE (V)
R
Fig. 3 Total Cap acitanc e vs. Revers e Voltage
250
200
150
100
15
IME (ns)
2
1
0.5
SE
EVE
0.2
rr
t,
0.1 0
4
8121620
I , FORWARD CURRENT (mA)
Fig. 4 Typical Reverse Recovery Time Characteristics
F
24 28
50
D
0
025
T , AMBIENT TEMPERATURE (°C)
A
50
Fig. 5 Po w er Der ating Cur ve
75
100
125
SDMP0340LT /LST /LCT /LAT
Document number: DS30266 Rev. 11 - 2
2 of 4
www.diodes.com
July 2008
© Diodes Incorporated
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