Diodes SDMK0340L User Manual
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Features
• Low Forward Voltage Drop
• Guard Ring Die Construction for Transient Protection
• Ideal for Low Logic Level Applications
• Low Capacitance
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 3)
Maximum Ratings @T
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum (Peak) Forward Current
Non-Repetitive Peak Forward Surge Current @8.3ms
Single half sine-wave superimposed on rated load
(JEDEC method)
= 25°C unless otherwise specified
A
SDMK0340L
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Mechanical Data
• Case: SOD-323
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Leads: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Polarity: Cathode Band
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.004 grams (approximate)
Top View
V
V
V
R(RMS)
I
RRM
RWM
VR
IFM
FSM
40 V
28 V
30 mA
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Electrical Characteristics @T
Reverse Breakdown Voltage (Note 1)
Forward Voltage Drop
Leakage Current (Note 1)
Total Capacitance
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Products manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
SDMK0340L
Document number: DS30239 Rev. 10 - 2
Characteristic Symbol Min Typ Max Unit Test Condition
= 25°C unless otherwise specified
A
PD
R
JA
θ
T
J, TSTG
V
(BR)R
VF ⎯
IR ⎯
CT ⎯
1 of 3
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40
160 mW
625
-40 to +125
⎯ ⎯
290 370 mV
0.20 0.5
2
⎯
V
μA
pF
°C/W
°C
I
10uA
R =
IF = 1mA
VR = 30V
VR = 1V f = 1.0 MHz
June 2008
© Diodes Incorporated
NSTAN
T
N
O
US FORWAR
C
URREN
T
NSTAN
T
N
O
US R
R
C
URREN
T
C, TOT
CAPACITANC
F
R
R
REC
OVER
Y T
P
P
O
R
PAT
O
SDMK0340L
1
(A)
(A)
100m
D
10m
SE
1m
EVE
100n
E
100µ
A
10µ
F
I, I
1µ
0 0.2 0.4 0.6
V , INSTANTANE OUS FO RW ARD VOLTAG E (V)
F
100
0.8 1.0
1.2 1.4
Fig. 1 Typical Forward Characteristics
E
A
I, I
10n
R
1n
10
0
5
V , INSTANTANEOUS REVERSE VOLT AGE (V)
R
15
20
Fig. 2 Typical Reverse Characteristics
25
30
10
5
)
E (p
AL
T
N (mW)
I
DISSI
10
1
0.1
0
5
V , DC REVERSE VOLTAGE (V)
R
10 15
Fig. 3 Total Capacitance vs. Reverse Voltage
200
150
100
20
25
IME (ns)
2
1
0.5
SE
EVE
0.2
rr
t,
0.1
0
Fig. 4 Typical R everse Recovery Time Characteristic s
8
4
I , FORWARD CURRENT (mA)
F
12 16
20 24 28
WE
,
50
D
0
025
T , AMBIENT TEMPERATURE ( C)
A
50
Fig. 5 Power Derating Curve
75
100
125
°
SDMK0340L
Document number: DS30239 Rev. 10 - 2
2 of 3
www.diodes.com
June 2008
© Diodes Incorporated
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