Diodes SDM10M45SD User Manual

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Features

Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Maximum Ratings @T
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Forward Continuous Current (Note 1) Forward Surge Current @ t < 8.3ms
= 25°C unless otherwise specified
A
Top View
SDM10M45SD
SURFACE MOUNT SCHOTTKY BARRIER DIODE

Mechanical Data

Case: SOT-26
Case Material: Molded Plastic, "Green" Molding Compound,
Note 6. UL Flammability Classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Copper
leadframe).
Polarity: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.016 grams (approximate)
Device Schematic
V
V
V
R(RMS)
I
RRM
RWM
VR
IFM
FSM
45 V
40 V
100 mA
1.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 2) Forward Voltage Reverse Leakage Current (Note 2) Total Capacitance
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
SDM10M45SD
Document number: DS30386 Rev. 6 - 2
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
= 25°C unless otherwise specified
A
PD
R
JA
θ
TJ , T
STG
V
(BR)R
VF
IR
CT
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45
225 mW
-40 to +125
444
μA pF
IR = 100μA
370 450 mV
0.07 1.0
6.0
°C/W
°C
IF = 10mA VR = 10V VR = 10V, f = 1.0MHz
July 2008
© Diodes Incorporated
T
T
O
US FORWAR
C
URRENT
C, TOT
CAPACITAN
C
F
RAGE REC
TIF
CUR
RENT
P
P
OWER
P
T
O
100
(mA)
10
D
1.0
T = 125ºC
A
T = 75ºC
A
T = 25ºC
A
T = -25ºC
A
1,000
100
10
1.0
SDM10M45SD
ANE AN
F
0.1
I , INS
200 400
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
600 800
Fig. 1 Typi cal Forwar d C haracte r istics
1.0
100
T = 25C
°
j
)
f = 1MHz
0.1
0.01 0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
10
R
20 30 40
Fig. 2 Typical Reverse Characteristics
100
(mA)
80
E (p
60
IED
10
40
AL
T
1.0 01510 25
5
V , DC REVERSE VOLTAGE (V)
R
30 3520
Fig. 3 Total Cap acitance vs. Revers e Voltage, Per Elem ent
250
40
20
,
O
I AVE
T = 125 C
j
°
0
0
25 50
T , AMBIENT TEMPERATURE ( C)
A
75
100
Fig. 4 Forward Current Derating Curve (Per Element)
125
°
150
200
N (mW) I
150
A
DISSI
100
,
50
D
0
0100
T , AMBIENT TEMPERATURE ( C)
A
Fig. 5 Power Derating Curve
SDM10M45SD
Document number: DS30386 Rev. 6 - 2
200
°
2 of 3
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July 2008
© Diodes Incorporated
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