Diodes SDM03U40 User Manual

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θ

(BR)

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Features

• Low Forward Voltage Drop

• Guard Ring Die Construction for Transient Protection

• Ideal for low logic level applications

• Low Capacitance

• Lead Free by Design/RoHS Compliant (Note 1)

• "Green" Device, Note 4 and 5

• Qualified to AEC-Q101 Standards for High Reliability

Maximum Ratings @T

Characteristic Symbol Value Unit

Peak Reverse Voltage
DC Reverse Voltage
RMS Reverse Voltage
Average Rectified Current
Non-Repetitive Peak Forward Surge Current @8.3ms

Single half sine-wave superimposed on rated load

= 25°C unless otherwise specified

A

SDM03U40

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Mechanical Data

• Case: SOD-523

• Case Material: Molded Plastic, "Green" Molding Compound,

Note 5. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: Cathode Band

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.002 grams (approximate)

Top View

40 V
30 V
21 V
30 mA

200 mA

V

R(RMS

VRM

VR

IO

I

FSM

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)

Operating and Storage Temperature Range

Electrical Characteristics @T

Reverse Breakdown Voltage (Note 3)
Forward Voltage
Peak Reverse Current (Note 3)
Total Capacitance

Notes: 1. No purposefully added lead.

code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Short duration pulse test used to minimize self-heating effect.

4. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with date code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to date

SDM03U40

Document number: DS30392 Rev. 9 - 2

Characteristic Symbol Min Typ Max Unit Test Conditions

A

PD

R

T

J, TSTG

= 25°C unless otherwise specified

V

R

VF

IR

CT

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JA

40

⎯
⎯ ⎯
⎯

150 mW
667

-40 to +125

⎯ ⎯

290 370 mV

0.5

2

⎯

V

μA
pF

°C/W

°C

I

uA

R = 10

IF = 1mA
VR = 30V
VR = 1V, f = 1.0 MHz

January 2009

© Diodes Incorporated

TANT

O

US FORWARD CUR

RENT

TANT

O

US R

R

CUR

RENT

C, TOT

CAPACITAN

C

F

R

R

REC

OVER

Y T

P

P

O

R

PAT

O

SDM03U40

1

(A)

(A)

100m

10m

1m

SE

EVE

100n

ANE

ANE

10n

F

I , INS

100

)

0

0.2 0.4 0.6

V , INSTANTANEOUS FORWARD VOL TAGE (V)

F

0.8 1.0

1.2

Fig. 1 Typical Forward Characteristics

1.4

I, INS

R

1n

0

51015

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

20

Fig. 2 Typical Reverse Characteristics

10

5

25 30

35

E (p

AL

N (mW)
I

DISSI

T

200

150

100

10

1

0.1
0

5

V , DC REVERSE VOLT AGE (V)

10 15

R

Fig. 3 Total Capacitance vs . Reverse Volt age

20

25

IME (ns)

2

1

0.5

SE

EVE

0.2

rr

t,

0.1
0

48

I , FORWARD CURRENT (mA)

F

12 16 20

Fig. 4 Typical Reverse Recovery Time Characteristics

24

28

WE

50

,

D

0

025

T , AMBIENT TEMPERATURE ( C)

A

50

75 100

125

°

Fig. 5 Power Derating Curve

SDM03U40

Document number: DS30392 Rev. 9 - 2

2 of 3

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January 2009

© Diodes Incorporated