Diodes SDM03MT40A User Manual
SDM03MT40/A
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Product Summary
V
(V) IO (mA) V
RRM
40 30 0.37 1
(V) I
Fmax
Rmax
(µA)
Description
30mA Surface Mount Schottky Barrier Diode in SOT-26 package,
offers low capacitance and low forward voltage drop, designed with
Guard Ring for Transient Protection. Ideal for low logic level
applications.
Top View
SDM03MT40
Device Schematic
Features and Benefits
Low Forward Voltage Drop
Guard Ring Die Construction for Transient Protection
Ideal for low logic level applications
Low Capacitance
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device(Note 3)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, "Green" Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Polarity: See Diagram
Leads: Matte Tin (Lead Free), Solderable per MIL-STD-202,
Method 208
Lead Free Plating (Matte Tin Finish annealed over Copper
leadframe).
Weight: 0.016 grams (approximate)
e3
SDM03MT40A
Device Schematic
Ordering Information (Note 4)
Part Number Case Packaging
SDM03MT40-7-F SOT26 3000/Tape & Reel
SDM03MT40A-7-F SOT26 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
KSR
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SDM03MT40/A
Document number: DS30372 Rev. 12 - 2
KSR = SDM03MT40 Product Type
Marking Code
YM = Date Code Marking
YM
Y = Year ex: A = 2013
M = Month ex: 9 = September
KSK
1 of 4
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YM
KSK = SDM03MT40A Product Type
Marking Code
YM = Date Code Marking
Y =Year ex: A = 2013
M = Month ex: 9 = September
October 2013
© Diodes Incorporated
NST
N
T
N
O
US F
O
R
R
C
U
R
REN
T
NSTAN
TANEO
US R
R
C
URR
N
T
SDM03MT40/A
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 6)
V
V
V
R(RMS)
IFM
RRM
RWM
VR
40 V
28 V
30 mA
Non-Repetitive Peak Forward Surge Current @8.3ms
Single half sine-wave superimposed on rated load
I
FSM
200 mA
(JEDEDC method)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
PD
R
T
J, TSTG
θJA
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
Forward Voltage Drop (Note 6)
Leakage Current (Note 6)
Total Capacitance
Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
V
(BR)R
VF
IR
CT
40
2
1
(A)
100m
(A)
E
225 mW
444 °C/W
-40 to +125 °C
V
I
10µA
R =
370 mV
1 µA
IF = 1mA
VR = 10V
pF
VR = 1V f = 1.0 MHz
10m
D
SE
WA
1m
EVE
100n
E
A
I, I
10n
R
1n
0
51015
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
20
25
30 35
Fig. 2 Typical Reverse Characteristics
A
F
I, I
0 0.2 0.4 0.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.8 1.0
1.2
Fig. 1 Typical Forward Characteristics
1.4
SDM03MT40/A
Document number: DS30372 Rev. 12 - 2
2 of 4
www.diodes.com
October 2013
© Diodes Incorporated
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