Diodes SDM0230CSP User Manual
)
A
Product Summary
V
(V) IO (mA) V
RRM
30 200 0.50 0.05
(V) @ +25°C I
F(MAX)
R(MAX
(mA) @ +25°C
Description
The SDM0230CSP is a 30-volt 0.2A schottky barrier diode that is
optimized for low forward voltage drop and low leakage current housed in
a compact chip scale package (CSP) that occupies only 0.18mm
space. The low thermal resistance enables designers to meet design
challenges of increasing efficiency whilst at the same time reducing
board space. It is ideally suited for use in portable applications.
NEW PRODUCT
Applications
Blocking Diode
Switching Diode
NEW PRODUCT
Reverse Protection Diode
Boost Diode
SDM0230CSP
0.2A SCHOTTKY BARRIER DIODE CHIP SCALE PACKAGE
Features and Benefits
0.18mm2 footprint – 70% smaller than DFN1006/SOD923
Off board profile of 0.3mm – more than 30% thinner than the
DFN1006
Low forward voltage of 0.50V (max) – minimises power
dissipation losses
Low leakage – maximises battery power
2
board-
Soft, Fast Switching Capability
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X3-WLCUS0603-3
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Dot
Weight: 0.119mg
C
Pin 1
Pin 2
Ordering Information (Note 4)
Part Number Case Packaging
SDM0230CSP-7 X3-WLCUS0603-3 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
X7 = Product Type Marking Code
Dot denotes Cathode Pin
SDM0230CSP
Document number: DS35649 Rev. 7 - 2
1 of 4
www.diodes.com
May 2013
© Diodes Incorporated
T
T
O
U
FOR
R
C
U
R
R
T
N
TAN
TANEO
US R
R
CUR
REN
T
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
NEW PRODUCT
Typical Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
NEW PRODUCT
Electrical Characteristics (@T
V
R
θJA
T
, T
J
STG
= +25°C, unless otherwise specified.)
A
I
FSM
RRM
I
O
SDM0230CSP
30 V
0.2 A
4.5 A
261 °C/W
-55 to +150 °C
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.30
Forward Voltage Drop
V
F
— 0.42
— 0.36
Leakage Current (Note 6)
Junction Capacitance
Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per http://www.diodes.com/datsheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
I
R
C
J
— — 50 µA
— 1.5 — mA
— 9 — pF
0.35
0.50
—
I
= 10mA, TJ = +25°C
F
V
I
= 200mA, TJ = +25°C
F
I
= 200mA, TJ = +125°C
F
V
= 30V, TJ = +25°C
R
V
= 30V, TJ = +125°C
R
VR = 15V, TJ = +25°C , f = 1MHz
Typical Electrical Characteristics
1,000
(mA)
EN
100
T = 150°C
A
10
T = 125°C
A
D
WA
S
1
T = 85°C
A
T = 25°C
ANE
0.1
AN
0.01
F
I, INS
0 0.1 0.2 0.3 0.4 0.5 0.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1 Typical Forward Characteristics
SDM0230CSP
Document number: DS35649 Rev. 7 - 2
A
T = -55°C
A
2 of 4
www.diodes.com
10000
(µA)
SE
EVE
S
R
I, I
0.0001
T = 150°C
A
1000
100
T = 85°C
A
10
T = 25°C
A
1
0.1
T = -55°C
0.01
A
0.001
0
5 1015202530
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 2 Typical Reverse Characteristics
T = 125°C
A
May 2013
© Diodes Incorporated
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