Diodes SDM0230CSP User Manual

)

A

Product Summary

V

(V) IO (mA) V

RRM

30 200 0.50 0.05

(V) @ +25°C I

F(MAX)

R(MAX

(mA) @ +25°C

Description

The SDM0230CSP is a 30-volt 0.2A schottky barrier diode that is

optimized for low forward voltage drop and low leakage current housed in

a compact chip scale package (CSP) that occupies only 0.18mm

space. The low thermal resistance enables designers to meet design

challenges of increasing efficiency whilst at the same time reducing

board space. It is ideally suited for use in portable applications.

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Applications

 Blocking Diode

 Switching Diode

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 Reverse Protection Diode

 Boost Diode

SDM0230CSP

0.2A SCHOTTKY BARRIER DIODE CHIP SCALE PACKAGE

Features and Benefits

 0.18mm2 footprint – 70% smaller than DFN1006/SOD923

 Off board profile of 0.3mm – more than 30% thinner than the

DFN1006

 Low forward voltage of 0.50V (max) – minimises power

dissipation losses

 Low leakage – maximises battery power

2

board-

 Soft, Fast Switching Capability

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: X3-WLCUS0603-3

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: Cathode Dot

 Weight: 0.119mg

C

Pin 1

Pin 2

Ordering Information (Note 4)

Part Number Case Packaging

SDM0230CSP-7 X3-WLCUS0603-3 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

X7 = Product Type Marking Code
Dot denotes Cathode Pin

SDM0230CSP

Document number: DS35649 Rev. 7 - 2

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May 2013

© Diodes Incorporated

T

T

O

U

FOR

R

C

U

R

R

T

N

TAN

TANEO

US R

R

CUR

REN

T

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load

Thermal Characteristics

Characteristic Symbol Value Unit

NEW PRODUCT

Typical Thermal Resistance Junction to Ambient (Note 5)

Operating and Storage Temperature Range

NEW PRODUCT

Electrical Characteristics (@T

V

R

θJA

T

, T

J

STG

= +25°C, unless otherwise specified.)

A

I

FSM

RRM

I

O

SDM0230CSP

30 V

0.2 A

4.5 A

261 °C/W

-55 to +150 °C

Characteristic Symbol Min Typ Max Unit Test Condition

— 0.30

Forward Voltage Drop

V

F

— 0.42

— 0.36

Leakage Current (Note 6)

Junction Capacitance

Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per http://www.diodes.com/datsheets/ap02001.pdf.

6. Short duration pulse test used to minimize self-heating effect.

I

R

C

J

— — 50 µA

— 1.5 — mA

— 9 — pF

0.35

0.50

—

I

= 10mA, TJ = +25°C

F

V

I

= 200mA, TJ = +25°C

F

I

= 200mA, TJ = +125°C

F

V

= 30V, TJ = +25°C

R

V

= 30V, TJ = +125°C

R

VR = 15V, TJ = +25°C , f = 1MHz

Typical Electrical Characteristics

1,000

(mA)

EN

100

T = 150°C

A

10

T = 125°C

A

D

WA

S

1

T = 85°C

A

T = 25°C

ANE

0.1

AN

0.01

F

I, INS

0 0.1 0.2 0.3 0.4 0.5 0.6

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Figure 1 Typical Forward Characteristics

SDM0230CSP

Document number: DS35649 Rev. 7 - 2

A

T = -55°C

A

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10000

(µA)

SE

EVE

S

R

I, I

0.0001

T = 150°C

A

1000

100

T = 85°C

A

10

T = 25°C

A

1

0.1

T = -55°C

0.01

A

0.001

0

5 1015202530

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Figure 2 Typical Reverse Characteristics

T = 125°C

A

May 2013

© Diodes Incorporated

C, TOT

CAP

C

TAN

C

SDM0230CSP

100

f=1MHz

E (pF)

I

10

A

AL

T

NEW PRODUCT

1

0 5 10 15 20 25 30

V , DC REVERSE VOLTAGE (V)

R

Figure 3 Total Capacitance vs. Reverse Voltage

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Cathode

Dot

D

L

︵3

X

E

e

1

b

︶

Cathode

e

X3-WLCUS0603-3

Dim Min Max Typ

A 0.24 0.30 —

A1 0.00 0.01 —

b 0.23 0.29 0.26

Anode

b1 0.075 0.135 0.105

D 0.290 0.300 0.295

b1 ︵2

X

︶

E 0.590 0.600 0.595
e — — 0.40

e1 — — 0.155

L 0.13 0.19 0.16

A

1

A

All Dimensions in mm

Seating Plane

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

1

X

SDM0230CSP

Document number: DS35649 Rev. 7 - 2

Y

Y

www.diodes.com

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Dimensions

X 0.30
Y 0.21

Y1 0.60

Value

(in mm)

May 2013

© Diodes Incorporated

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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1. are intended to implant into the body, or

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Copyright © 2013, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

SDM0230CSP

SDM0230CSP

Document number: DS35649 Rev. 7 - 2

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