Diodes SBR3U30P1 User Manual

Features

• Ultra Low Forward Voltage Drop

• Superior Reverse Avalanche Capability

• Patented Interlocking Clip Design for High Surge Current

Capacity

• Patented Super Barrier Rectifier Technology

• Soft, Fast Switching Capability

• 150ºC Operating Junction Temperature

• ±16KV ESD Protection (HBM, 3B)

• ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)

• Lead Free Finish, RoHS Compliant (Note 1)

• “Green” Molding Compound (No Br, Sb)

• Qualified to AEC-Q101 Standards for High Reliability

SBR3U30P1

SUPER BARRIER RECTIFIER

Mechanical Data

• Case: PowerDI®123

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Polarity Indicator: Cathode Band

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.018 grams (approximate)

Top View

3.0A SBR

PowerDI

®

123

®

Maximum Ratings @T

= 25°C unless otherwise specified

A

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.

Characteristic Symbol Value Unit

V

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Avalanche Energy

= 25°C, IAS = 5A, L = 8.5 mH)

(T

J

Repetitive Peak Avalanche Energy
(1µs, 25°C)

V

V

V

R(RMS)

I
E

P

RRM

RWM

RM

I

O

FSM

AS

ARM

30 V

21 V

3.0 A
75 A

105 mJ

1100 W

Thermal Characteristics

Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Ambient (Note 4)

Operating and Storage Temperature Range (Note 5)

Notes: 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.

2. Theoretical R

3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.

4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf

SBR and PowerDI are registered trademark of Diodes Incorporated.

SBR3U30P1

Document number: DS30974 Rev. 6 - 2

Characteristic Symbol Value Unit

R

JS

θ

R

JA

θ

R

JA

θ

T

, T

J

STG

calculated from the top center of the die straight down to the PCB cathode tab solder junction.

θJS

5
178
123

-65 to +150 ºC

1 of 4

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ºC/W

October 2008

© Diodes Incorporated

P, P

OWER

PATIO

N

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 5)

Forward Voltage Drop

Leakage Current (Note 5)

Notes: 5. Short duration pulse test used to minimize self-heating effect.

V

(BR)R

V

F

I

R

1.2

1

(W)

0.8

SBR3U30P1

30 - - V

0.28

0.31

-

0.39

0.20

0.23

0.35
70

-

150

6

12

10,000

1,000

0.32

0.35

0.43

0.23

0.26

0.38
150

400

T=150C

°

A

15
20

T =100 C

A

°

V

µA

µA
mA
mA

IR = 400µA
I

F

I

F

I

F

I

F

I

F

I

F

V
V
V
V

T= -65C

°

A

100

= 0.5A, TJ = 25ºC
= 1.0A, TJ = 25ºC
= 3.0A, TJ = 25ºC
= 0.5A, TJ = 125ºC
= 1.0A, TJ = 125ºC
= 3.0A, TJ = 125ºC

= 5V, TJ = 25ºC

R

= 30V, TJ = 25ºC

R

= 5V, TJ = 125ºC

R

= 30V, TJ = 125ºC

R

0.6

DISSI

0.4

D

0.2

0

0123

I , AVERAGE FORWARD CURRENT (A)

F(AV)

Fig. 1 Forward Power Dissipation

1.0E+02

T =150 C

1.0E+01

1.0E+00

1.0E-01

A

T =100 C

A

T=25C

10

1

4

I , INSTANTANEOUS FORWARD CURRENT (mA)

0 0.2 0.4 0.6 0.8

V , INSTANTAN EOUS FORW ARD VOLTAG E (V)

F

Fig. 2 Typical Forward Ch ar acteristics

F

0.1

10,000

°

°

°

A

1,000

100

T=25C

°

A

f = 1.0MHz

1.0E-02

1.0E-03

1.0E-04

T= -65C

°

A

R

1.0E-05

I , INSTANTANEOUS REVERSE CURRENT (mA)

0 5 10 15 20 25 30

V , INSTANTANEOUS REVERSE VOLT AGE (V)

R

Fig. 3 Typical Reverse Characteristics

10

T

C , TOTAL CAPACITANCE (pF)

1

0 5 10 15 20 25 30

V , DC REVERSE VOLTAGE (V)

R

Fig. 4 Total Capacitance vs. Reverse Voltage

BR and PowerDI are registered trademark of Diodes Incorporated.

S

SBR3U30P1

Document number: DS30974 Rev. 6 - 2

2 of 4

www.diodes.com

October 2008

© Diodes Incorporated