Diodes SBR3U30P1 User Manual

Page 1
Ultra Low Forward Voltage Drop
Superior Reverse Avalanche Capability
Patented Interlocking Clip Design for High Surge Current
Capacity
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150ºC Operating Junction Temperature
±16KV ESD Protection (HBM, 3B)
±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Molding Compound (No Br, Sb)
Qualified to AEC-Q101 Standards for High Reliability
SBR3U30P1
SUPER BARRIER RECTIFIER

Mechanical Data

Case: PowerDI®123
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Polarity Indicator: Cathode Band
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.018 grams (approximate)
Top View
3.0A SBR
PowerDI
®
123
®
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.

Characteristic Symbol Value Unit

V
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Average Rectified Output Current (See Figure 1) Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Avalanche Energy
= 25°C, IAS = 5A, L = 8.5 mH)
(T
J
Repetitive Peak Avalanche Energy (1µs, 25°C)
V
V
V
R(RMS)
I E
P
RRM
RWM
RM
I
O
FSM
AS
ARM
30 V
21 V
3.0 A 75 A
105 mJ
1100 W
Thermal Characteristics
Maximum Thermal Resistance Thermal Resistance Junction to Soldering (Note 2) Thermal Resistance Junction to Ambient (Note 3) Thermal Resistance Junction to Ambient (Note 4)
Operating and Storage Temperature Range (Note 5)
Notes: 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Theoretical R
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf
SBR and PowerDI are registered trademark of Diodes Incorporated.
SBR3U30P1
Document number: DS30974 Rev. 6 - 2

Characteristic Symbol Value Unit

R
JS
θ
R
JA
θ
R
JA
θ
T
, T
J
STG
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
θJS
5 178 123
-65 to +150 ºC
1 of 4
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ºC/W
October 2008
© Diodes Incorporated
Page 2
P, P
OWER
PATIO
N
Electrical Characteristics @T
= 25°C unless otherwise specified
A

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 5)
Forward Voltage Drop
Leakage Current (Note 5)
Notes: 5. Short duration pulse test used to minimize self-heating effect.
V
(BR)R
V
F
I
R
1.2
1
(W)
0.8
SBR3U30P1
30 - - V
0.28
0.31
-
0.39
0.20
0.23
0.35 70
-
150
6
12
10,000
1,000
0.32
0.35
0.43
0.23
0.26
0.38 150
400
T=150C
°
A
15 20
T =100 C
A
°
V
µA
µA mA mA
IR = 400µA I
F
I
F
I
F
I
F
I
F
I
F
V V V V
T= -65C
°
A
100
= 0.5A, TJ = 25ºC = 1.0A, TJ = 25ºC = 3.0A, TJ = 25ºC = 0.5A, TJ = 125ºC = 1.0A, TJ = 125ºC = 3.0A, TJ = 125ºC
= 5V, TJ = 25ºC
R
= 30V, TJ = 25ºC
R
= 5V, TJ = 125ºC
R
= 30V, TJ = 125ºC
R
0.6
DISSI
0.4
D
0.2
0
0123
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
1.0E+02
T =150 C
1.0E+01
1.0E+00
1.0E-01
A
T =100 C
A
T=25C
10
1
4
I , INSTANTANEOUS FORWARD CURRENT (mA)
0 0.2 0.4 0.6 0.8
V , INSTANTAN EOUS FORW ARD VOLTAG E (V)
F
Fig. 2 Typical Forward Ch ar acteristics
F
0.1
10,000
°
°
°
A
1,000
100
T=25C
°
A
f = 1.0MHz
1.0E-02
1.0E-03
1.0E-04
T= -65C
°
A
R
1.0E-05
I , INSTANTANEOUS REVERSE CURRENT (mA)
0 5 10 15 20 25 30
V , INSTANTANEOUS REVERSE VOLT AGE (V)
R
Fig. 3 Typical Reverse Characteristics
10
T
C , TOTAL CAPACITANCE (pF)
1
0 5 10 15 20 25 30
V , DC REVERSE VOLTAGE (V)
R
Fig. 4 Total Capacitance vs. Reverse Voltage
BR and PowerDI are registered trademark of Diodes Incorporated.
S
SBR3U30P1
Document number: DS30974 Rev. 6 - 2
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Page 3
RAGE FORWARD CUR
RENT
T
RAT
T TEMP
R
TUR
C
P
U
NCHE P
OWER
SBR3U30P1
5.0
(A)
4.0
3.0
2.0
1.0
F(AV)
I, AVE
0
025
120
100
80
50
T , AMBIENT TEMPERATURE (°C)
Fig. 5 Forward Current Derating Curve
75 100
A
125 150
175 200
160
)
150
E (°
140
A
130
E
120
110
100
ED AM BIE N
70
, DE
A
10,000
(W)
1,000
90 80
60
0
Fig. 6 Operating Temperature Derating
10
5
V , DC REVERSE VOLTAGE (V)
R
15 25
20 30
60
40
20
DERATING IN PERCENTAGE (%)
ARM
P , AVAL ANCHE PEAK PULSE POWER
0
0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE ( C)
J
Fig. 7 Pulse Derating Curve
100
M AVALA
10
, MAXIM
ARM
1
°
0.001 0.01 0.1 1 10 100 1,000 T , PULSE DURATION (uS)
Fig. 8 Maximum Avalanche Power Curve
P
BR and PowerDI are registered trademark of Diodes Incorporated.
S
SBR3U30P1
Document number: DS30974 Rev. 6 - 2
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October 2008
© Diodes Incorporated
Page 4
SBR3U30P1
Ordering Information (Note 6)
Part Number Case Packaging
SBR3U30P1-7 PowerDI®123 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
3U3
YM
3U3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September)

Package Outline Dimensions

C
D
L
E
B
PowerDI®123
E
H
L1
L2
A
Dim Min Max Typ
A 3.50 3.90 3.70 B 2.60 3.00 2.80 C 1.63 1.93 1.78 D 0.93 1.00 0.98 E 0.85 1.25 1.00 H 0.15 0.25 0.20
L 0.55 0.75 0.65 L1 1.80 2.20 2.00 L2 0.95 1.25 1.10
All Dimensions in mm

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
Y2
X1
GX2
IMPORTANT NOTICE
LIFE SUPPORT
Y1
Dimensions
G 1.0 X1 2.2 X2 0.9 Y1 1.4 Y2 1.4
Value (in mm)
SBR and PowerDI are registered trademark of Diodes Incorporated.
SBR3U30P1
Document number: DS30974 Rev. 6 - 2
4 of 4
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October 2008
© Diodes Incorporated
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