Diodes SBR3U150LP User Manual

Features
Ultra Low Forward Voltage Drop
Superior Reverse Avalanche Capability
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150ºC Operating Junction Temperature
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Molding Compound Device (Note 2)
U-DFN3030-8
Bottom View
SUPER BARRIER RECTIFIER
Mechanical Data
Case: U-DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.0172 grams (approximate)
AA
Top View
Schematic and Pin Configuration
A
A
C = CATHODE A = ANOD E
C
CCC
e4
3A SBR
®
Ordering Information (Note 4)
Part Number Case Packaging
SBR3U150LP-7 U-DFN3030-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SBV
SVB = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 06 for 2006) WW = Week code (01 ~ 53)
SBR is a registered trademark of Diodes Incorporated.
SBR3U150LP
Document number: DS31072 Rev. 7 - 2
1 of 5
www.diodes.com
October 2012
© Diodes Incorporated
)
(BR)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Average Rectified Output Current (See Figure 1) Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Maximum Thermal Resistance Thermal Resistance Junction to Ambient (Note 5) @ T Operating and Storage Temperature Range
Characteristic Symbol Value Unit
A
= +25ºC
V
T
V
RRM
V
RWM
V
RM
R(RMS
I
O
I
FSM
R
θ
, T
J
JA
STG
150 V
106 V
3.0 A
33 A
60 °C/W
-65 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) Forward Voltage Reverse Current (Note 6)
Notes: 5. Device mounted on polymide substrate, 2oz. Copper, 75mm2 pad area, double side PCB.
6. Short duration pulse test used to minimize self-heating effect.
V
R
V
F
I
R
150 - - V
- - 0.91 V
- - 2 mA
IR = 2mA IF = 3.0A, TJ = +25ºC VR = 150V, TJ = +25ºC
SBR is a registered trademark of Diodes Incorporated.
SBR3U150LP
Document number: DS31072 Rev. 7 - 2
2 of 5
www.diodes.com
October 2012
© Diodes Incorporated
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