Diodes SBR3U100LP User Manual
Features
• Ultra Low Forward Voltage Drop
• Superior Reverse Avalanche Capability
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• 150ºC Operating Junction Temperature
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
U-DFN3030-8
Bottom View
SBR3U100LP
SUPER BARRIER RECTIFER
Mechanical Data
• Case: U-DFN3030-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0172 grams (approximate)
AA
Top View
Schematic and Pin Configuration
A
A
C = CATHODE
A = ANOD E
C
CCC
e4
3A SBR
®
Ordering Information (Note 4)
Part Number Case Packaging
SBR3U100LP-7 U-DFN3030-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SBR is a registered trademark of Diodes Incorporated.
SBR3U100LP
Document number: DS30998 Rev. 8 - 2
3U10
3U10 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 06 for 2006)
WW = Week code (01 ~ 53)
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October 2012
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)
θ
(BR)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance Junction to Ambient (Note 5) TA = +25ºC
Operating and Storage Temperature Range
V
T
V
RRM
V
RWM
V
RM
R(RMS
I
O
I
FSM
R
, T
J
JA
STG
SBR3U100LP
100 V
70 V
3.0 A
32 A
61 °C/W
-65 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Reverse Current (Note 6)
Notes: 5. Device mounted on Polyimide substrate, 2 oz. Copper, 75mm
6. Short duration pulse test used to minimize self-heating effect.
V
R
V
F
I
R
100 - - V
- - 0.79 V
-
-
2
pad area, double side PCB.
16
3
200
15
µA
mA
IR = 0.2mA
IF = 3.0A, TJ = +25ºC
V
= 100V, TJ = +25ºC
R
= 100V, TJ = +125ºC
V
R
SBR is a registered trademark of Diodes Incorporated.
SBR3U100LP
Document number: DS30998 Rev. 8 - 2
2 of 5
www.diodes.com
October 2012
© Diodes Incorporated
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