Diodes SBR3M30P1 User Manual
Features
• Ultra Low Leakage Current
• Excellent High Temperature Stability
• Superior Reverse Avalanche Capability
• Patented Interlocking Clip Design for High Surge Current
Capacity
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• 175ºC Operating Junction Temperature
• ±16KV ESD Protection (HBM, 3B)
• ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
• Lead Free Finish, RoHS Compliant (Note 1)
• “Green” Molding Compound (No Br, Sb)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: POWERDI®123
• Case Material: Molded Plastic, “Green” Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Polarity Indicator: Cathode Band
• Terminals: Matte Tin Finish annealed over Copper leadframe.
• Weight: 0.018 grams (approximate)
POWERDI®123
Top View
SBR3M30P1
3.0A SBR
SURFACE MOUNT SUPER BARRIER RECTIFIER
POWERDI
UL Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
®
123
®
Ordering Information (Note 2)
Part Number Case Packaging
SBR3M30P1-7 POWERDI®123 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied
2. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SBR and POWERDI are registered trademarks of Diodes Incorporated.
3M3
YM
SBR3M30P1
Document number: DS30641 Rev. 8 - 2
3M3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
1 of 5
www.diodes.com
March 2012
© Diodes Incorporated
)
θ
(BR)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Avalanche Energy (Per Element)
= 25ºC, IAS = 5A, L = 8.5mH)
(T
J
Repetitive Peak Avalanche Energy (Per Element)
(1μs, 25ºC)
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
V
V
V
P
T
J
RRM
RWM
V
RM
R(RMS
I
O
I
FSM
E
AS
ARM
R
JS
θ
R
JA
θ
R
JA
, T
STG
SBR3M30P1
30 V
21 V
3.0 A
75 A
105 mJ
1100 W
5
183
ºC/W
125
-65 to +175 ºC
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
Forward Voltage Drop
Leakage Current (Note 6)
Notes: 3. Theoretical R
4. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
5. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
θJS
V
R
V
F
I
R
30 - - V
-
-
-
-
-
-
0.26
0.37
0.46
0.16
0.29
0.42
8.5
-
19
1.7
3.1
0.30
0.41
0.50
0.19
0.32
0.45
100
200
15
20
V
µA
µA
mA
mA
IR = 250µA
I
= 0.1A, TJ = 25ºC
F
= 1.0A, TJ = 25ºC
I
F
I
= 3.0A, TJ = 25ºC
F
= 0.1A, TJ = 125ºC
I
F
I
= 1.0A, TJ = 125ºC
F
= 3.0A, TJ = 125ºC
I
F
V
= 5V, TJ = 25ºC
R
V
= 30V, TJ = 25ºC
R
= 5V, TJ = 125ºC
V
R
V
= 30V, TJ = 125ºC
R
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR3M30P1
Document number: DS30641 Rev. 8 - 2
2 of 5
www.diodes.com
March 2012
© Diodes Incorporated
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