Diodes SBR3A40SAF User Manual
A
Product Summary
V
(V) IO (A) V
RRM
40 3 0.53 0.4
(@ TA = +25°C)
(MAX)
F
(V) I
Description and Applications
The SBR3A40SAF is a single rectifier packaged in the low profile
SMAF package. Providing low VF and excellent high temperature
stability this device is ideal for use in general rectification applications
such as:
Boost Diode
Blocking Diode
Recirculating Diode
ADVANCE INFORMATION
R(MAX)
(mA)
Green
SBR3A40SAF
SURFACE MOUNT SUPER BARRIER RECTIFIER
Features and Benefits
Patented SBR technology provides an avalanche capability five
times larger than Schottky diodes, ensuring more rugged and
reliable end applications.
Lower reverse leakage ensuring greater stability at higher
temperatures
Low forward voltage (V
improving efficiency.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
) minimizes conduction losses and
F
Mechanical Data
Case: SMAF
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.064 grams (approximate)
SMAF
Top View
3A SBR
®
Ordering Information
Part Number Case Packaging
SBR3A40SAF-13 SMAF 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
(Note 4)
Marking Information
SBR is a registered trademark of Diodes Incorporated.
SBR3A40SAF
Document number: DS36039 Rev. 9 - 2
S V 4 = Product Type Marking Code
= Manufacturers’ code marking
YWW = Date Code Marking
Y = Last digit of year (ex: 7 for 2007)
WW = Week code (01 to 53)
B = Foundry and Assembly Code
1 of 4
www.diodes.com
September 2013
© Diodes Incorporated
N
T
N
T
N
O
U
O
R
RD C
URREN
T
S
E
OUS R
EVERS
E C
R
R
E
m
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current, 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance Junction to Case (Note 5)
Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
ADVANCE INFORMATION
Electrical Characteristics (@T
V
RRM
V
RWM
V
RM
I
O
I
FSM
R
θJC
R
θJA
T
, T
J
STG
= +25°C, unless otherwise specified.)
A
SBR3A40SAF
40 V
3.0 A
50 A
15
85
°C/W
-65 to +150 °C
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
Leakage Current (Note 6)
Notes: 5. Device mounted on FR-4 substate, 1"*1", 2oz, single-sided, PC boards with 0.1"*0.15" copper pad.
6. Short duration pulse test used to minimize self-heating effect.
V
F
I
R
10
(A)
— 0.46 0.53 V
— — 0.4 mA
— — 80 mA
100
A)
NT (
10
U
IF = 3.0A, TJ = +25°C
V
= 40V, TJ = +25°C
R
V
= 40V, TJ = +125°C
R
T = 150°C
A
T = 125°C
A
1
WA
S F
E
A
0.1
A
T = 125°C
A
T = 100°C
A
T = 75°C
A
1
0.1
T = 100°C
A
T = 75°C
A
T = 150°C
A
S
F
I, I
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
T = 25°C
A
Figure 1 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated.
SBR3A40SAF
Document number: DS36039 Rev. 9 - 2
2 of 4
www.diodes.com
TAN TAN
R
0.01
I , IN
20 40 60 80 100
T = 25°C
A
PERCENTAGE RATED PEAK REVERSE VOLTAGE (%)
Figure 2 Typical Reverse Characteristics
September 2013
© Diodes Incorporated
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