Diodes SBR30U30CT User Manual

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Features

• Ultra Low Forward Voltage Drop

• Excellent High Temperature Stability

• Superior Reverse Avalanche Capability

• Patented Super Barrier Rectifier Technology

• Soft, Fast Switching Capability

• 150°C Operating Junction Temperature

• Lead Free Finish, RoHS Compliant (Note 2)

• Also Available in Green Molding Compound (Note 4)

Maximum Ratings @T

TO-220AB

Top View

= 25°C unless otherwise specified

A

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Average Rectified Output Current @ TC = 140ºC IO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Avalanche Energy

= 25ºC, IAS = 20A, L = 8.5 mH)

(T

J

Repetitive Peak Avalanche Power
(1µs, 25ºC)

TO-220AB

Bottom View

V
V

V

I
E

P

SBR30U30CT

30A SBR

SUPER BARRIER RECTIFIER

Mechanical Data

• Case: TO-220AB

• Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 1.85 grams (approximate)

RRM
RWM

RM

Package Pin Out

Configuration

30 V

30 A

FSM

AS

ARM

280 A
800 mJ

9800 W

®

Thermal Characteristics

Characteristic Symbol Value Unit

Typical Thermal Resistance
Thermal Resistance Junction to Case

Operating and Storage Temperature Range

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

Forward Voltage Drop (per leg)

Leakage Current (Note 1)

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.

SBR is a registered trademark of Diodes Incorporated.

SBR30U30CT

Document number: DS31063 Rev. 7 - 2

= 25°C unless otherwise specified

A

V

F

I

R

R

JC

θ

, T

T

J

STG

0.41

-

0.50

0.34
—

-

0.33
40

2

-65 to +150 ºC

0.45

0.54

0.37

V

0.5

1.5

100

mA

ºC/W

= 15A, TJ = 25ºC

I

F

= 30A, TJ = 25ºC

I

F

I

= 15A, TJ = 125ºC

F

I

= 30A, TJ = 125ºC

F

V

= 30V, TJ = 25ºC

R

= 30V, TJ = 125ºC

V

R

1 of 4

www.diodes.com

January 2009

© Diodes Incorporated

P, P

O

R

PAT

O

SBR30U30CT

9
8
7

N (W)
I

6

5

DISSI

4

WE

3

D

2

1
0

0 5 10 15 20

I , AVERAGE FORWARD CURRENT (A)

F(AV)

Fig. 1 Forward Power Dissipation

100.00

T = 150°C

A

T = 125°C

A

100,000

10.00

T = 85°C

A

1.00

10,000

T = 25°C

JA JC

JA JC

Note 1

A

T = -65°C

A

1,000

T

C , TOTAL CAPACITANCE (pF)

100

0.1 1 10 100
V , DC REVERSE VOLTAGE (V)

R

Fig. 4 To tal Capacitance vs. Reverse Voltage

120

100

80

60

40

DERATING IN PERCENTAGE (%)

20

ARM

P , AVALANCHE PEAK PULSE POWER

0

0 25 50 75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 Pulse Derating Curve

0.10

0.01

0.001

0.0001

0102030

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Fig. 3 Typical Reverse Characteristics

30

R = R

θθ

Total Device

25

20

15

R = R

θθ

Per Element

10

5

R = 17°C/W

θ

F(AV)

I , AV E RAGE FORW A RD CURRENT (A)

JA

Per Element

0

25 50 75 100 125 150 175

T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 Forward Current Derating Curve

SBR is a registered trademark of Diodes Incorporated.

SBR30U30CT

Document number: DS31063 Rev. 7 - 2

2 of 4

www.diodes.com

January 2009

© Diodes Incorporated