Diodes SBR2U30P1 User Manual
Features
• Ultra Low Forward Voltage Drop
• Superior Reverse Avalanche Capability
• Patented Interlocking Clip Design for High Surge Current
Capacity
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• 150ºC Operating Junction Temperature
• ±16KV ESD Protection (HBM, 3B)
• ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
• Lead Free Finish, RoHS Compliant (Note 1)
• “Green” Molding Compound (No Br, Sb)
• Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
• Case: POWERDI®123
• Case Material: Molded Plastic, “Green” Molding Compound. UL
• Moisture Sensitivity: Level 1 per J-STD-020
• Polarity Indicator: Cathode Band
• Terminals: Matte Tin Finish annealed over Copper leadframe.
• Weight: 0.018 grams (approximate)
POWERDI®123
Top View
SUPER BARRIER RECTIFIER
Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
SBR2U30P1
2.0A SBR
POWERDI
®
123
®
Ordering Information (Note 2)
Part Number Case Packaging
SBR2U30P1-7 POWERDI®123 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied
2. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SBR and POWERDI are registered trademarks of Diodes Incorporated.
2U3
YM
SBR2U30P1
Document number: DS30706 Rev. 7 - 2
2U3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
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)
θ
(BR)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Avalanche Energy
= 25°C, IAS = 5A, L = 8.5 mH)
(T
J
Repetitive Peak Avalanche Energy
= 1µs, TJ = 25°C)
(T
P
Thermal Characteristics
V
V
V
V
R(RMS
I
E
P
RRM
RWM
RM
I
O
FSM
AS
ARM
SBR2U30P1
30 V
21 V
2.0 A
75 A
105 mJ
1100 W
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
R
JS
θ
R
JA
θ
R
JA
T
, T
J
STG
5
178
ºC/W
123
-65 to +150 ºC
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
Forward Voltage Drop
Leakage Current (Note 6)
Notes: 3. Theoretical R
4. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
5. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
SBR and POWERDI are registered trademarks of Diodes Incorporated.
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
θJS
V
R
V
F
I
R
SBR2U30P1
Document number: DS30706 Rev. 7 - 2
30 - - V
- 0.22 0.26
- 0.31 0.35
- 0.36 0.40
- 0.12 0.15
V
- 0.27 0.30
- 0.30 0.33
- 75 150 µA
- 150 400 µA
- 6 15 mA
- 12 20 mA
IR = 400µA
I
= 0.1A, TJ = 25ºC
F
= 1.0A, TJ = 25ºC
I
F
= 2.0A, TJ = 25ºC
I
F
= 0.1A, TJ = 125ºC
I
F
= 1.0A, TJ = 125ºC
I
F
= 2.0A, TJ = 125ºC
I
F
= 5V, TJ = 25ºC
V
R
= 30V, TJ = 25ºC
V
R
V
= 5V, TJ = 125ºC
R
V
= 30V, TJ = 125ºC
R
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