Diodes SBR2A30P1 User Manual
Features
• Low Forward Voltage Drop
• Low Leakage Current
• Superior Reverse Avalanche Capability
• Excellent High Temperature Stability
• Patented Interlocking Clip Design for High Surge Current
Capacity
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• 150ºC Operating Junction Temperature
• ±16KV ESD Protection (HBM, 3B)
• ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
• Lead Free Finish, RoHS Compliant (Note 1)
• “Green” Molding Compound (No Br, Sb)
• Qualified to AEC-Q101 Standards for High Reliability
SBR2A30P1
SURFACE MOUNT SUPER BARRIER RECTIFIER
Mechanical Data
• Case: PowerDI®123
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Polarity Indicator: Cathode Band
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.018 grams (approximate)
Top View
2.0A SBR
PowerDI
®
123
®
Maximum Ratings @T
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
V
V
V
V
R(RMS)
I
RRM
RWM
RM
I
O
FSM
30 V
21 V
2.0 A
75 A
Thermal Characteristics
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Notes: 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Theoretical R
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
SBR and PowerDI are registered trademarks of Diodes Incorporated.
SBR2A30P1
Document number: DS30920 Rev. 11 - 2
Characteristic Symbol Value Unit
R
JS
θ
R
JA
θ
R
JA
θ
T
, T
J
STG
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
ӨJS
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5
175
100
-65 to +150 ºC
ºC/W
October 2008
© Diodes Incorporated
P, P
OWER
PATIO
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
Forward Voltage Drop
Leakage Current (Note 5)
Notes: 5. Short duration pulse test used to minimize self-heating effect.
V
(BR)R
V
F
I
R
2
1.5
N (W)
30 - - V
-
-
-
-
-
-
0.23
0.34
0.40
0.50
0.13
0.275
50
-
55
5
7
0.28
0.39
0.45
-
0.19
0.33
100
200
10
15
V
µA
µA
mA
mA
IR = 250µA
I
= 0.1A, TJ = 25ºC
F
I
= 1.0A, TJ = 25ºC
F
= 2.0A, TJ = 25ºC
I
F
I
= 4.0A, TJ = 125ºC
F
= 0.1A, TJ = 125ºC
I
F
I
= 1.0A, TJ = 125ºC
F
V
= 5V, TJ = 25ºC
R
= 30V, TJ = 25ºC
V
R
V
= 5V, TJ = 125ºC
R
= 30V, TJ = 125ºC
V
R
10,000
T =100 C
°
1,000
100
T =150 C
A
A
°
T= -65C
T=25C
°
A
°
A
SBR2A30P1
1
DISSI
0.5
D
0
100,000
10,000
1,000
100
10
0.1
0
123
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
1
10
1
F
I , INSTANTA NEOUS F ORWARD CURRENT (mA)
4
5
0.1
0 0.2 0.4 0.6 0.8 1
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
10,000
1,000
100
T
10
C , TOTAL CAPACITANCE (pF)
R
0.01
I , INSTANT ANEOUS REVERSE CURRENT (uA)
0 5 10 15 20 25 30
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 3 Typical Reverse Characteristics
1
0 5 10 15 20 25 30
V , DC REVERSE VOLTAGE (V)
R
Fig. 4 Total Capacitance vs. Reverse Voltage
BR and PowerDI are registered trademarks of Diodes Incorporated.
S
SBR2A30P1
Document number: DS30920 Rev. 11 - 2
2 of 4
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October 2008
© Diodes Incorporated
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