This Super Barrier Rectifier (SBR) diode has been designed to meet
the stringent requirements of Automotive Applications. It is ideally
suited to use as a :
100% Avalanche tested.
Patented SBR technology provides a superior avalanche
capability than schottky diodes ensuring more rugged and
reliable end applications.
Reduced Ultra-low forward voltage drop (V
and cooler operation.
Reduced high temperature reverse leakage; Increased
reliability against thermal runaway failure in high temperature
operation.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
); better efficiency
F
Mechanical Data
Case: TO263 (D2PAK)
Case Material: Molded Plastic, “Green” Molding compound. UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 1.6 grams (approximate)
Package Pin Out
Confi
uration
Ordering Information (Notes 4)
Part Number Compliance Case Packaging
SBR20A60CTBQ-13 Automotive TO263 800/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SBR is a registered trademark of Diodes Incorporated.
SBR20A60CTBQ
Document number: DS36363 Rev. 1 - 2
SBR
20A60CTB
YYWW AB
SBR20A60CTB = Product Type Marking Code
B = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 13 = 2013)
WW = Week (01 - 53)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current Per Device
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Peak Repetitive Reverse Surge Current (2μS - 1Khz)
Repetitive Peak Avalanche Power (1μs, +25°C)
Non-Repetitive Avalanche Energy (TJ = +25°C, I
= 12A L = 10mH) EAS
AS
Thermal Characteristics (Per Leg)
Characteristic Symbol Value Unit
Typical Thermal Resistance
Thermal Resistance Junction to Case (Note 5)
Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics(Per Leg)(@T
V
RRM
V
RWM
V
RM
I
O
I
FSM
I
RRM
P
ARM
R
θJC
R
θJA
T
, T
J
STG
= +25°C, unless otherwise specified.)
A
SBR20A60CTQ
60 V
20 A
180 A
3 A
7000 W
500 mJ
4
8
-65 to +150 °C
°C/W
Characteristic Symbol Min Typ Max Unit Test Condition
= 10A, TJ = +25°C
—
Forward Voltage Drop
V
F
—
—
Leakage Current (Note 6)
Notes: 5. Mounted heatsink black Aluminum, 45mm*20mm*12mm, minimum recommended pad layout as shown on Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
I
R
—
—
6
5
D
4
WA
3
A
2
, A VE
F(AV)
POWER DISSIPATION (W)
0.50
0.47
0.63
0.14
45
20
10
0.1
0.01
T = +125°C
A
1
—
—
0.79
0.5
—
T = +150°C
A
V
mA
T = +85°C
A
T = +25°C
A
I
F
= 10A, TJ = +125°C
I
F
I
= 20A, TJ = +25°C
F
= 60V, TJ = +25°C
V
R
V
= 60V, TJ = +125°C
R
1
F
0.001
0
051015
I AVERAGE FORWARD CURRENT (A)
F(AV)
Note: 7. Mounted heatsink, black Aluminum, 45mm*20mm*12mm,min recommended pad layout layout.
Figure 1 Forward Power Dissipation
I , INSTANTANEOUS FORWARD CURRENT (A)
0100 200300 400 500 600 700 800
V , INSTANTAN EOUS FORWARD VOLTAGE (mV )
F
Figure 2 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated.
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final and determinative format released by Diodes Incorporated.
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