Diodes SBR1U200P1 User Manual
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θ
Features
• Ultra Low Forward Voltage Drop
• Low Leakage Current
• Superior Reverse Avalanche Capability
• Excellent High Temperature Stability
• Patented Interlocking Clip Design for High Surge Current
Capacity
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• 150ºC Operating Junction Temperature
• Lead Free Finish, RoHS Compliant (Note 1)
• “Green” Molding Compound (No Br, Sb)
NEW PRODUCT
SBR1U200P1
SURFACE MOUNT SUPER BARRIER RECTIFIER
Mechanical Data
• Case: PowerDI®123
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Polarity Indicator: Cathode Band
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.018 grams (approximate)
Top View
1.0A SBR
PowerDI
®
123
®
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
V
V
I
RRM
RWM
RM
I
O
FSM
200 V
1.0 A
40 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance Junction to Ambient (Note 2)
Maximum Thermal Resistance Junction to Ambient (Note 3)
Operating and Storage Temperature Range
R
JA
R
JA
, T
T
J
STG
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage
Reverse Current (Note 4)
Reverse Recovery Time
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
SBR and PowerDI are registered trademarks of Diodes Incorporated.
2. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
3. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
V
F
I
R
t
rr
SBR1U200P1
Document number: DS32093 Rev. 2 - 2
-
-
- - 50
- - 25 ns
www.diodes.com
1 of 4
0.75
0.60
0.82
0.68
217 ºC/W
138 ºC/W
-65 to +175 ºC
= 1.0A, TJ = 25ºC
I
F
V
μA
= 1.0A, TJ = 125ºC
I
F
VR = 200V, TJ = 25ºC
= 0.5A, IR = 1A,
I
F
I
= 0.25A,
RR
August 2010
© Diodes Incorporated
P
P
OWER
PATIO
NSTAN
TANEO
US FORWARD CUR
REN
T
TANT
O
US R
R
CUR
RENT
C, TOT
CAPACITANC
F
NEW PRODUCT
1.0
0.9
1
(A)
SBR1U200P1
0.8
N (W)
0.7
0.6
0.5
0.1
0.01
T = 150°C
A
T = 125°C
A
DISSI
0.4
0.3
,
D
0.2
0.001
T = 85°C
A
T = 25°C
A
0.1
F
0
0 0.5 1.0 1.5 2.0
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
1,000
(µA)
100
SE
10
T = 150°C
A
T = 125°C
A
I, I
0.0001
1,000
)
E (p
0 100 200 300 400 500 600 700 800 900
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
Fig. 2 Typical Forward Characteristics
f=1MHz
EVE
T = 85°C
A
1
ANE
T = 25°C
A
0.1
R
I , INS
0.01
0 40 80 120 160 200
V , INSTANTANEOUS REVERSE VOLT AGE (V)
R
Fig. 3 Typical Reverse Characteristics
1.2
1.0
Note 3
100
AL
T
10
0.1 1 10 100
V , DC REVERSE VOLTAGE (V)
R
Fig. 4 Total Capacitance vs. Reverse Voltage
175
150
125
0.8
100
0.6
75
0.4
50
0.2
F(AV)
I , AVERAGE FORWARD CURRENT (A)
0
0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 Forward Current Derating Curve
25
A
T , DERATED AMBIENT TEMPERATURE (°C)
0
0 20 40 60 80 100 120 140 160 180 200
V , DC REVERSE VOL TAGE (V)
R
Fig. 6 Operating Temperature Derating
SBR and PowerDI are registered trademarks of Diodes Incorporated.
SBR1U200P1
Document number: DS32093 Rev. 2 - 2
2 of 4
www.diodes.com
August 2010
© Diodes Incorporated
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