Diodes SBR1A40SA User Manual

Features
Low Leakage Current
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150ºC Operating Junction Temperature
Lead Free Finish, RoHS Compliant (Note 1)
Green Molding Compound (No Halogen and Antimony)
(Note 2)
Top View Bottom View
Green
SBR1A40SA
1.0A SBR
®
SUPER BARRIER RECTIFIER
SMA
Mechanical Data
Case: SMA
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Lead Free Plating (Matte Tin Finish.) Solderable per
MIL-STD-202, Method 208
Polarity Indicator: Cathode Band
Weight: 0.064 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
SBR1A40SA-13 SMA 5000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. No purposefully added lead. Halogen and Antimony Free.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SBR1A40SA
Document number: DS31768 Rev. 4 - 2
S D4
YWW
S D 4 = Product Type Marking Code YWW = Date Code Marking
XX
Y = Last digit of year (ex: 9 for 2009) WW = Week code (01 - 53)
1 of 4
www.diodes.com
= Manufacturers’ code marking
December 2010
© Diodes Incorporated
θ
P, P
OWER
PATIO
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Output Current (See Figure 1) Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range
SBR1A40SA
V
RRM
V
RWM
V
RM
I
O
I
FSM
R
JA
T
, T
J
STG
40 V
1 A
15 A
116 ºC/W
-65 to +150 ºC
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
Leakage Current (Note 5)
Notes: 4. Device mounted on Polymide substrate, with 1” x 1”, 2 oz. Copper, double-sided PCB board.
5. Short duration pulse test used to minimize self-heating effect.
V
F
I
R
-
-
-
-
-
-
1.2
1.0
10
1
N (W)
0.8
0.1
0.6
DISSI
0.01
0.4
D
0.2
0.001
0.5
0.45 500
100
T = 150°C
A
T = 125°C
A
μA
mA
T = 85°C
A
T = 25°C
A
= 1.0A, TJ = 25ºC
I
V
F
I
= 1.0A, TJ = 125ºC
F
V
= 40V, TJ = 25ºC
R
= 40V, TJ = 100ºC
V
R
F
0
0 0.5 1 1.5 2 2.5
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
I , INSTANTANEOUS FORW ARD CURRENT (A)
0.0001 0 100 200 300 400 500
V , INSTANTANEOUS FORWARD VOLTAGE ( mV)
F
Fig. 2 Typical Forward Characteristics
SBR1A40SA
Document number: DS31768 Rev. 4 - 2
2 of 4
www.diodes.com
December 2010
© Diodes Incorporated
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