Diodes SBR12U45LH1 User Manual
A
Product Summary
V
@ +125°C
V
(V) IO(A)
RRM
45 12 0.38 0.3
F(typ)
(V)
I
R(MAX)
@ V
(mA)
RRM
Description
The SBR12U45LH1 uses SBR patented technology that offers ultra-
low V
Encapsulated in the new PDI-5SP package with a 0.75mm low height
profile and protruding leads for easy soldering, it is especially suited
for use as a bypass diode in solar panels.
to reduce forward power loss and improve efficiency.
F
Applications
• Solar Bypass Diode
POWERDI5SP
SBR12U45LH1
Green
Features
• Designed as bypass diodes for solar panels
• Low profile height (0.75mm) and 7.6mm protruding leads,
enabling the package
• Selectively rated for +200°C maximum junction temperature for
high thermal reliability and excellent high temperature stability
• Patented Super Barrier Rectifier technology
• Ultra low forward voltage drop to minimize forward power losses
• Very low reverse leakage to ensures maximum efficiency of solar
panel
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
SUPER BARRIER RECTIFIER
POWERDI
to be integrated within the solar glass panel
Mechanical Data
• Case: POWERDI5SP-B
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Polarity: Cathode bar mark on top and cathode notch on lead
• Weight: 0.199 grams (approximate)
C
12A SBR
®
5SP-B
®
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
SBR12U45LH1-13 POWERDI5SP-B 3500 Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR12U45LH1
Document number: DS35094 Rev. 5 - 2
www.diodes.com
12U45LH1 = Product Type Marking Code
= Manufacturers’ Code Marking
YYWWK = Date Code Marking
YY = Last Two Digits of Year (ex: 13 for 2013)
WW = Week Code (01 ~ 53)
K = Factory Designator
1 of 5
February 2014
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5)
Operating Temperature Range
Storage Temperature Range
≤ 80% V
V
R
DC Forward Mode (Note 7) ≤175
DC Forward Mode (Note 8) ≤200
RRM
V
V
V
I
R
T
RRM
RWM
RM
I
O
FSM
θJA
T
STG
SBR12U45LH1
J
45 V
12 A
300 A
66 °C/W
-65 to +150
°C
-65 to +175 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.40 0.48
2 of 5
—
—
—
—
—
—
0.42 0.50
0.38 0.45
70 200
90 300
19 —
60 —
Forward Voltage Drop
Leakage Current (Note 6)
Notes: 5. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com.pdf.
7. Max junction temperature +175°C guaranteed for 2 hours at maximum output.
8. Max junction temperature +200°C guaranteed for 2 hours at maximum output.
SBR and POWERDI are registered trademarks of Diodes Incorporated.
6. Short duration pulse test used to minimize self-heating effect.
SBR12U45LH1
Document number: DS35094 Rev. 5 - 2
V
F
I
R
www.diodes.com
V
µA
mA
= 10A, TJ = +25°C
I
F
I
= 12A, TJ = +25°C
F
I
= 12A, TJ = +125°C
F
V
= 40V, TJ = +25°C
R
V
= 45V, TJ = +25°C
R
= 45V, TJ = +125°C
V
R
V
= 45V, TJ = +150°C
R
February 2014
© Diodes Incorporated
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