Diodes SBR10U45SD1 User Manual

A
Features
Designed as Bypass Diodes for Solar Panels
Selectively Rated for +200ºC Maximum Junction Temperature
for High Thermal Reliability
Patented Super Barrier Rectifier Technology
High Forward Surge Capability
Ultra Low Forward Voltage Drop
Excellent High Temperature Stability
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Pb
SUPER BARRIER RECTIFIER
Mechanical Data
Case: DO-201AD
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Tin Plated Leads. Solderable per MIL-STD-
202, Method 208
Weight: 1.21 grams (approximate)
Top View
10A SBR
®
Ordering Information (Note 3)
Part Number Case Packaging
SBR10U45SD1-T DO-201AD 1200/Tape & Reel, 13-inch
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
AB
YWW
SBR10U45
SBR10U45 = Product Type Marking Code
B = Foundry and Assembly Code
= Manufacturers’ code marking YWW = Date Code Marking Y = Last digit of year (ex: 8 for 2008) WW = Week code (01 to 53)
SBR10U45SD1
Document number: DS31350 Rev. 8 - 2
SBR is a registered trademark of Diodes Incorporated.
1 of 4
www.diodes.com
July 2012
© Diodes Incorporated
)
θ
θ
(BR)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Avalanche Energy (T
= +25°C , IAS = 20A , L = 8.5mH)
J
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance Thermal Resistance Junction to Ambient (Note 4)
Thermal Resistance Junction to Lead (Note 4)
V
Operating Temperature Range
Storage Temperature Range
R
VR 50% V
DC Forward Mode ≤200
80% V
RRM RRM
V
RRM
V
RWM
V
RM
V
R(RMS
I
O
AS 20 mJ
E
I
FSM
R
JA
R
JL
TJ
T
STG
45 V
32 V 10 A
200 A
54
°C/W
18 °C/W
-65 to +150 180
°C
-65 to +175 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
Forward Voltage Drop
Leakage Current (Note 5)
Notes: 4. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
V
V
F
I
R
45 — — V
R
— — —
— — —
0.42
0.37
0.051 — 27
0.42
0.47
0.41
0.3 15 75
V
mA
IR = 0.5mA I
= 8A, TJ = +25°C
F
= 10A, TJ = +25°C
I
F
I
= 10A, TJ = +125°C
F
V
= 45V, TJ = +25°C
R
= 45V, TJ = +100°C
V
R
V
= 45V, TJ = +150°C
R
SBR10U45SD1
Document number: DS31350 Rev. 8 - 2
SBR is a registered trademark of Diodes Incorporated.
2 of 4
www.diodes.com
July 2012
© Diodes Incorporated
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