Diodes SBR10U45D1 User Manual

g
A
Features
Ultra-Low Forward Voltage Drop
Excellent High Temperature Stability
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Molding Compound (No Br, Sb)
Top View
SBR10U45D1
SUPER BARRIER RECTIFIER
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.4 grams (approximate)
3
Package Pin Out
Confi
uration
10A SBR
®
Ordering Information (Note 2)
Part Number Case Packaging
SBR10U45D1-13 TO252 (DPAK) 2500 pieces/reel
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SBR10U45D1
Document number: DS31069 Rev. 7 - 2
SBR
10U45
YYWW AB
SBR10U45 = Product Type Marking Code
B = Foundry and Assembly Code YYWW = Date Code Marking YY = Last two digits of year, (ex: 07 = 2007) WW = Week (01 - 53)
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April 2011
© Diodes Incorporated
P, P
OWER
PATIO
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
V V
V
V
R(RMS)
Average Rectified Output Current @TC = 110ºC IO Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Typical Thermal Resistance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (Note 3)
Operating and Storage Temperature Range
R R
, T
T
J
RRM RWM
RM
FSM
θ
θ
JC JA
STG
SBR10U45D1
45 V
31 V 10 A
125 A
2.0
°C/W
34
-65 to +150 ºC
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
= 10A, TJ = 25ºC
Forward Voltage Drop Leakage Current (Note 4)
Notes: 3. Polymide PCB 2 oz. Copper, minimum recommended pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be
found on our website at http://www.diodes.com.
4. Short duration pulse test used to minimize self-heating effect.
V
F
I
R
-
- - 0.5 mA
-
-
0.57
0.54
V
I
F
I
= 10A, TJ = 125ºC
F
VR = 45V, TJ = 25ºC
N (W)
DISSI
5.0
4.5
4.0
3.5
3.0
2.5
2.0
10
0.1
0.01
T = 125°C
1
A
T = 150°C
A
T = 25°C
T = -55°C
A
A
1.5
D
1.0
0.001
0.5
F
0
012345678910
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
I , INSTANT ANEOUS FORWARD CURRENT (A)
0.0001 0 200 400 600 800
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
SBR10U45D1
Document number: DS31069 Rev. 7 - 2
2 of 5
www.diodes.com
April 2011
© Diodes Incorporated
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