Diodes SBR1045SD1 User Manual

A

Features

• Designed as Bypass Diodes for Solar Panels

• Complies with IEC 61730-2 Solar Bypass Diode

Standards (T

= 75°C, 1hr. Short Circuit)

@ T

• Patented Super Barrier Rectifier Technology

• High Forward Surge Capability

• Ultra Low Forward Voltage Drop

• Excellent High Temperature Stability

• Lead Free Finish, RoHS Compliant (Note 1)

NEW PRODUCT

A

Jmax

≤ TJ = T

L/C

+ R

thL/C

* VF * Ise,

SBR1045SD1

SUPER BARRIER RECTIFIER

Mechanical Data

• Case: DO-201AD

• Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Tin Plated Leads. Solderable per MIL-STD-

202, Method 208

• Weight: 0.121 grams (approximate)

Top View

10A SBR

®

Ordering Information (Note 2)

Part Number Case Packaging

SBR1045SD1-T DO-201AD 1200/Tape & Reel, 13-inch

Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.

2. For packaging details, go to our website at http://www.diodes.com.

Marking Information

YWW

AB

SBR1045

SBR is a registered trademark of Diodes Incorporated.

SBR1045SD1

Document number: DS31351 Rev. 5 - 2

1 of 4

www.diodes.com

SBR1045 = Product Type Marking Code

= Manufacturers’ code marking

B = Foundry and Assembly Code (if applicable)
YWW = Date Code Marking
Y = Last digit of year (ex: 7 for 2007)
WW = Week code (01 ~ 53)

September 2011

© Diodes Incorporated

)

θ

(BR)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Average Rectified Output Current @ TC = 110ºC IO
Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

Thermal Characteristics

NEW PRODUCT

Maximum Thermal Resistance (per leg) (Note 3)

Operating Temperature Range

Storage Temperature Range

Characteristic Symbol Value Unit

V

≤ 80% V

R

VR ≤ 50% V

DC Forward Mode ≤200

RRM
RRM

V
V

V

R(RMS

R
R

T

RRM
RWM

V

I

FSM

TJ

STG

RM

θ

JA
JL

SBR1045SD1

45 V

32 V
10 A

180 A

54

9

ºC/W

-65 to +150
≤180

ºC

-65 to +175 ºC

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 4)

Forward Voltage Drop

Leakage Current (Note 4)

Notes: 3. FR-4 PCB, 2oz. Copper, with minimum recommended pad layout as show on Diodes, Inc. suggest pad layout AP02001 at http://www.diodes.com.

4. Short duration pulse test used to minimize self-heating effect.

V

R

V

F

I

R

10

T = 150°C

A

T = 125°C

A

T = 100°C

1

A

T = 75°C

A

T = 50°C

A

T = 25°C

A

45 - - V

-

-

-

-

-

-

0.46

0.50

0.48

0.05

-

18

0.51

0.55

0.53

0.45
18

100

V

mA

IR = 0.5mA
I

= 8A, TJ = 25ºC

F

I

= 10A, TJ = 25ºC

F

= 10A, TJ = 125ºC

I

F

V

= 45V, TJ = 25ºC

R

V

= 45V, TJ = 100ºC

R

= 45V, TJ = 150ºC

V

R

100,000

10,000

1,000

100

T = 150°C

A

T = 125°C

A

T = 100°C

A

T = 75°C

A

T = 50°C

A

T = 25°C

A

F

I , INSTANTANEOUS FORWARD CURRENT (A)

0.1
0 100 200 300 400 500

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

F

Fig. 1 Typical Forward Characteri stics

R

10

I , INST ANTANEOUS REVERSE CURRENT (µA)

0 5 10 15 20 25 30 35 40 45

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Fig. 2 Typical Reverse Characteristics

SBR is a registered trademark of Diodes Incorporated.

SBR1045SD1

Document number: DS31351 Rev. 5 - 2

2 of 4

www.diodes.com

September 2011

© Diodes Incorporated