Diodes SBR0220LP User Manual

Low Leakage Current
Patented Super Barrier Rectifier Technology
cellent High Temperature Stability
Ex
Soft, Fast Sw
150ºC Operating Junction Temperature
Lead Free Finish, RoHS Compliant (Note 1)
Green” Molding Compound (No Br, Sb)
Qualified to A
NEW PRODUCT
Maximum Ratings @T
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Average Rectified Output Current (See Figure 1) Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
itching Capability
EC-Q101 Standards for High Reliability
= 25°C unless otherwise specified
A

Characteristic Symbol Value Unit

Mechanical Data

Case: DFN1006-2
Top View Bottom View
Case Material: Molded Plastic, “Green” Molding Compound. UL F
lammability Classification Rating 94V-0
Moisture Sensitivity
Polarity
Indicator: Cathode Dot
Terminals: Finish - NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.001 grams (approximate)
V
RRM
V
RWM
V
RM
V
R(RMS)
I
O
I
FSM
SBR0220LP
0.2A SBR
®
SUPER BARRIER RECTIFIER
: Level 1 per J-STD-020D
20 V
14 V
0.2 A
5.0 A
Thermal Characteristics
Maximum Thermal Resistance Thermal Resistance Junction to Soldering (Note 2) Thermal Resistance Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
Forward Voltage Drop
Leakage Current (Note 4)
Notes: 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Theoretical R
3. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.
4. Short duration pulse test used to minimize self-heating effect.
SBR is a registered trademark of Diodes Incorporated.
SBR0220LP
Document number: DS31062 Rev. 5 - 2

Characteristic Symbol Value Unit

R
JS
θ
R
JA
θ
T
, T
J
STG
= 25°C unless otherwise specified
A
V
(BR)R
V
F
I
R
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
θJS
20 - - V
0.38
-
0.30
0.44
0.38
-
2
0.43
0.42
0.33
0.48
0.41 50
1.3
diodes.com/datasheets/ap02001.pdf.
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17
304
ºC/W
-65 to +150 ºC
I
= 400µA
R
I
= 0.1A, TJ = 25ºC
F
I
= 0.1A, TJ = 150ºC
V
µA
mA
F
= 0.2A, TJ = 25ºC
I
F
I
= 0.2A, TJ = 150ºC
F
V
= 20V, TJ = 25ºC
R
= 20V, TJ = 150ºC
V
R
March 2008
© Diodes Incorporated
P
P
OWER
P
TIO
0.4
0.3
N (W) A
0.2
DISSI
,
D
0.1
NEW PRODUCT
0
0 0.1 0.2 0.3 0.4 0.5 0.6
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 1 Forward Power Dissipation
T =150°C
J
SBR0220LP
1,000
100
10
1
F
I , INSTANTANEOUS FORWARD CURRENT (mA)
0.1 0 0.2 0.4 0.6
V , INSTANTANE OUS FORWA RD VOLTAG E ( V)
F
Fig.2 Typical Forward Characteristics
0 5 10 15 20
Fig. 4 Total Capacitance vs. Reverse Voltage
0.25
Note 3
0.2
0.15
0.1
0.05
F(AV)
I , AVERAGE FORWARD CURRENT(A)
0
0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
Fig. 5 Forward Current Derating Curve
BR is a registered trademark of Diodes Incorporated.
S
SBR0220LP
Document number: DS31062 Rev. 5 - 2
175 200
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March 2008
© Diodes Incorporated
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