Diodes SB370, SB3100 User Manual
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Features
• Schottky Barrier Chip
• Guard Ring Die Construction for Transient Protection
Mechanical Data
• Case: DO-201AD
• Case Material: Molded Plastic. UL Flammability Classification
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• Surge Overload Rating to 80A Peak
• For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
• Lead Free Finish, RoHS Compliant (Note 3)
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Tin. Solderable per MIL-STD-202,
Method 208
• Polarity: Cathode Band
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 1.1 grams (approximate)
Maximum Ratings and Electrical Characteristics @T
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol SB370 SB380 SB390 SB3100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1) @ TL = 80°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage @ IF = 3.0A VFM
Peak Reverse Current @ TA = 25°C
at Rated DC Blocking Voltage @ TA = 100°C
Typical Junction Capacitance (Note 2)
V
V
V
R(RMS)
I
IRM
RRM
RWM
VR
IO
FSM
Cj
SB370 - SB3100
3.0A SCHOTTKY BARRIER RECTIFIER
Rating 94V-0
= 25°C unless otherwise specified
A
70 80 90 100 V
49 56 63 70 V
3.0 A
100 A
0.79 V
0.5
20
250 pF
mA
Thermal Characteristics
Characteristic Symbol SB370 SB380 SB390 SB3100 Unit
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
SB370 - SB3100
Document number: DS30134 Rev. 3 - 2
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperatu re solder exemptions applied, See EU Directive Annex Notes 5 and 7.
R
JA
θ
T
J, TSTG
1 of 3
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20 K/W
-65 to +150
© Diodes Incorporated
°C
July 2008
NSTAN
TAN
O
US FORWAR
D
C
URREN
T
NSTAN
TANEO
US R
R
CUR
REN
T
RAGE FORWARD CUR
RENT
C, TOT
CAPACITANC
F
P
F
O
R
R
U
R
GE CUR
R
T
SB370 - SB3100
100
(A)
1,000
(mA)
100
10
SE
10
T = 100 C
1.0
EVE
°
j
1.0
T = 75C
E
°
j
0.1
0.1
T = 25C
°
j
F
I, I
0.01
0 0.2 0.4 0.6 0.8 1.0
V , INST ANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Typical Forward Character i st ics
1,000
)
T = 25 C
j
f=1.0MHz
°
I, I
R
0.01
0
20 40 60 80 100 120 140
V , INSTANTANEOUS REVERSE VOLT AGE (V)
R
Fig. 2 Typical Reverse Characteristics
3.0
(A)
2.5
E (p
AL
T
(A)
EN
D S
WA
100
10
0.1
110
V , DC REVERSE VOLTAGE (V)
R
Fig. 3 T otal Capacitance vs. Reverse Voltage
80
64
48
32
Single Half-Sine-Wave
T = 100 C
°
j
100
2.0
1.5
1.0
0.5
F(AV)
I, AVE
0
25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
Fig. 4 Forward Current Derating Curve
°
16
EAK
FSM
I,
0
110
100
NUMBER OF CYCLES AT 60 Hz
Fig. 5 Max Non-Repetitive Peak Forward Surge Current
SB370 - SB3100
Document number: DS30134 Rev. 3 - 2
2 of 3
www.diodes.com
July 2008
© Diodes Incorporated
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