DIODES S9005P2CT Datasheet

Features

Schottky Barrier Chip

·

Guard Ring Die Construction for

·

Transient Protection
Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward

·

Voltage Drop
For Use in Low Voltage, High Frequency

·

Inverters, Free Wheeling, and Polarity
Protection Applications

Plastic Material - UL Flammability

·

Classification 94V-0

Mechanical Data

Case: Molded Plastic

·

Terminals: Plated Leads Solderable per

·

MIL-STD-202, Method 208

· Polarity: As Marked on Body

· Weight: 2.24 grams (approx)

· Mounting Position: Any

· Marking: Type Number

S9005P2CT

20A SCHOTTKY BARRIER RECTIFIER

TO-220AB

Dim Min Max

L

B

C

K

J

HH

D

E

N

M

A

G

P

All Dimensions in mm

A

B

C

D

E

G

H

J

K

L

M

N

P

14.22 15.88

9.65 10.67

2.54 3.43

5.84 6.86

¾ 6.25

12.70 14.73

2.29 2.79

0.51 1.14

3.53Æ 4.09Æ

3.56 4.83

1.14 1.40

0.30 0.64

2.03 2.92

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol S9005P2CT Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Minimum Avalanche Breakdown Voltage
per element (Note 1) @ 0.9A

Average Rectified Output Current
(Note 1 & 3)

Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) (Note 3)

Instantaneous Forward Voltage Drop @ iF= 10A

Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T

Typical Junction Capacitance per element (Note 2)

Voltage Rate of Change at Rated DC Blocking Voltage

Non-repetitive Avalanche Energy
(Constant Current During a 20ms pulse) @ T

Typical Thermal Resistance Junction to Case per element
(Note 1)

Operating and Storage Temperature Range

Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. I

and IOvalues shown are for entire package. For any single diode the values are one half of listed value.

FSM

= 125°C

C

= 125°C

C

T

@ TA= 25°C unless otherwise specified

V

RRM

V

RWM

V

R

¾ 110 V

I

O

I

FSM

v

FM

I

RM

C

j

dv/dt 10000 V/ms

W10mJ

R

qJc

j,TSTG

100 V

20 A

225 A

0.70 V

2.0
80

325 pF

1.5 K/W

-60 +150 °C

mA

DS23028 Rev. P-5 1 of 2 S9005P2CT

100

g

1000

g

1000

g

5

0

g

40

30

20

10

(AV)

I , AVERAGE FORWARD CURRENT (A)

0

0 50 100 150

T , CASE TEMPERATURE ( C)

C

Fi

. 1 Forward Current DeratingCurve

10

1.0

T = 25 C

°

j

F

I , INSTANTANEOUS FORWARD CURRENT (A)

0.1

Pulse width = 300 s

2% duty cycle

µ

0.2 0.4 0.6 0.8

°

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fi

.2 Typical Forward Characteristics

T = 25 Cj°

100

REVERSE

10

F

I , INSTANTANEOUS CURRENT (A)

1.0

T = 25 C

°

j

Pulse width = 300 s

2% duty cycle

0 40 80 100

V , INSTANTANEOUS REVERSE VOLTAGE (V)

F

Fi

.3 Typical Reverse Characteristics

100

J

C , CAPACITANCE (pF)

µ

10

0.1 1.0 10 100

V , REVERSE VOLTAGE (V)

R

Fi

.4 Typical Junction Capacitance

DS23028 Rev. P-5 2 of 2 S9005P2CT