Diodes QZX563C6V8C User Manual
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Features
• Quad TVS in Common Anode Configuration
• Nominal Zener Voltage: 6.8V
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic. UL Flammability Classification
• Ultra-Small Surface Mount Package
• Ideal For Transient Suppression
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
ESD Capability
• IEC 61000-4-2 Contact Method: ±8kV
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Finish: Matte Tin, Annealed Over Copper Leadframe.
• Orientation: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.003 grams (approximate)
• IEC 61000-4-2 Air Discharge Method: ± 25kV
Maximum Ratings @T
Top View
= 25°C unless otherwise specified
A
Bottom View
Characteristic Symbol Value Unit
Peak Power Dissipation, 10x1000μS Waveform (Note 5)
Peak Power Dissipation, 8x20μS Waveform (Note 5)
Ppk
Forward Voltage @ IF = 10mA (Note 3) VF
Forward Voltage @ IF = 100mA (Note 3) VF
QZX563C6V8C
QUAD SURFACE MOUNT TVS ARRAY
Rating 94V-0
Solderable per MIL-STD-202, Method 208
NC
C
1
C
4
Device Schematic
C
2
AC
3
10
80
0.9 V
1.0 V
W
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction-to-Ambient (Note 4)
Operating and Storage Temperature Range
Electrical Characteristics @T
Reverse Standoff Voltage
Type
Number
QZX563C6V8C CB 5 1.5 6.47 6.8 7.14 1.0 3.0 63
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Short duration pulse test used to minimize self-heating effect.
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
5. Non-repetitive current pulse per Figure 2 & 3 and derate above T
QZX563C6V8C
Document number: DS30716 Rev. 4 - 2
Marking
Code
V
RWM
= 25°C unless otherwise specified
A
and Leakage
IR @ V
V
RWM
μA
PD
R
JA
θ
T
J, TSTG
Breakdown Voltage
(Note 3)
V
@ IT = 1mA IR @ VR
BR
Min (V) Nom (V) Max (V)
= 25°C per Figure 1.
A
1 of 3
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150 mW
833 °C/W
-65 to +150
Maximum Reverse
Current
(Note 3)
μA
V
°C
Typical Junction
Capacitance
CT @ VR = 0V,
f = 1MHz
pF
July 2008
© Diodes Incorporated
P
P
U
RATIN
G
N
O
TEST
C
URR
N
T
C, T
O
T
CAPACIT
C
QZX563C6V8C
100
F
%
75
100
I
50
LSE DE
25
PEAK POWER OR CURRENT
EAK
10 X 1000 Waveform
as defined by R.E.A.
0
0 25 50 75 100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Pulse Derating Curve
50
PP pp
I , PEAK PULSE CURRENT (%I )
0
012
t, TIME (ms)
Fig. 2 Pulse Waveform
3
1
I , PEAK PULSE CURRENT (%I )
E (pF)
AN
AL
100
PP pp
T
50
70
60
50
40
30
20
10
0.1
0.01
0.001
R
I , LEAKAGE CURRENT (µA)
0
0
20 40
60
t, TIME (ms)
Fig. 3 Pulse Waveform
0.0001
1
2
V , REVERSE VOLTAGE (V)
345
R
Fig. 4 Typical Leakag e C ur r ent vs. Reve r se Vol t age
6
100
(mA)
10
E
1
T
I,
0
012
V , REVERSE VOLT AGE (V)
R
3
Fig. 5 Typical Total Capacitance vs. Reverse Voltage
4
5
0.1
6.5 6.75 7 7.25
V , BREAKDOWN VOLTAGE (V)
BR
Fig. 6 Brea kdown Voltage vs. Test Current
QZX563C6V8C
Document number: DS30716 Rev. 4 - 2
2 of 3
www.diodes.com
July 2008
© Diodes Incorporated
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