Diodes QSBT40 User Manual
V
Features
• Low Forward Voltage Drop
• Fast Switching
• Very High Density
• Ultra-Small Surface Mount Package PN Junction Guard Ring
for Transient and ESD Protection
• Provide Transient Protection for High-Speed Data Lines in
Accordance With:
IEC61000-4-2 (ESD) 15kV (Air), 8kV (Contact)
IEC61000-4-4 (EFT) 80A (tp = 5/50 ns)
IEC61000-4-5 (Lightning) Class 3
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
SOT363
Top View
QSBT40
QUAD DATA LINE SCHOTTKY BUS TERMINATOR
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram
• Weight: 0.006 grams (approximate)
CC
GND
DL2
DL3DL4
DL1
Device Schematic
Ordering Information (Note 5)
Part Number Case Packaging
QSBT40-7-F SOT363 3000/Tape & Reel
QSBT40-13-F SOT363 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code M N P R … Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
QSBT40
Document number: DS30195 Rev. 16 - 2
KST
www.diodes.com
KST = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
YM
M = Month (ex: 9 = September)
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September 2012
© Diodes Incorporated
θ
(BR)
P, P
O
R
PAT
O
QSBT40
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 6)
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
V
V
I
RRM
RWM
VR
I
FM
FSM
30 V
200 mA
600 mA
Thermal Characteristics
Power Dissipation (Note 6)
Thermal Resistance Junction to Ambient Air (Note 6)
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics (@T
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Reverse Current (Note 7)
Total Capacitance
Reverse Recovery Time
Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
8. At V
R
9. At V
R
200
Characteristic Symbol Value Unit
P
R
T
T
STG
= +25°C, unless otherwise specified.)
A
D
JA
J
200 mW
625
-55 to +125
-65 to +125
°C/W
°C
°C
Characteristic Symbol Min Typ Max Unit Test Condition
= 0V, DL(X) to VCC or GND.
= 0V, between Data Lines (e.g., DL1 and DL4).
30
V
R
⎯ ⎯
V
F
⎯ ⎯
I
R
⎯
C
T
t
⎯ ⎯
rr
⎯ ⎯
10.0
6.5
280
350
450
550
1000
2
⎯
5.0 ns
V
mV
μA
pF
IR = 100μA
I
= 0.1mA, tp < 300µS
F
I
= 1.0mA, tp < 300µS
F
= 10mA, tp < 300µS
I
F
I
= 30mA, tp < 300µS
F
= 100mA, tp < 300µS
I
F
VR = 25V
V
= 0, f = 1.0MHz (Note 8)
R
V
= 0, f = 1.0MHZ (Note 9)
R
= IR = 10mA,
I
F
I
= 0.1 x IR, RL = 100Ω
rr
150
N (mW)
I
100
DISSI
WE
50
D
0
0
25 50
T , AMBIENT TEMPERA TURE (°C)
A
75
100 125
150
175
200
Fig. 1 Max Pow er Di ssipat i o n vs. Ambient Temperature
QSBT40
Document number: DS30195 Rev. 16 - 2
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www.diodes.com
September 2012
© Diodes Incorporated
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