Diodes NIS5132 User Manual

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Green

3.6A 12V RESETTABLE ELECTRONIC FUSE

Description

The NIS5132 is a self-protected resettable electronic fuse designed

for consumer applications such as hard disk drive to industrial

application to enhance system reliability against catastrophic and

shutdown failures.

To support a wide range of demanding applications, the design has

been optimized to operate over the supply range of 9.0V to 18V. For

robustness and protections, the device integrates a low Rdson

NMOS buffer power device along with an under voltage lockout,

overvoltage clamp, a current limit, a dv/dt control and a thermal

shutdown circuits. The overvoltage circuit limits the output voltage

without shutting the device down to allow the load to continue

operating during over voltage. Thermal shutdown can be either

latching type (NIS5132MN1) or auto-retry type (NIS5132MN2).

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Features

• 9.0 to 18V operating input voltage

• Integrated NMOS power device with R

• Internal current limit - no external current sense resistor in load

path

• Under voltage lockout

• Over voltage clamp (NIS5132MN1 and NIS5132MN2)

• Thermal shutdown

• -40°C to +150°C operating junction temperature

• ESD ratings : HBM ＞ 1500V; MM 200V

• Small low profile U-DFN3030-10 packages

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green” and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

of 30mΩ typical

DS(ON)

Pin Assignments

Applications

• Hard drives

• Mother board power management

• Printer load power management

Typical Application Circuits

NIS5132

+12V

ENABLE

GND

NIS5132

Document number: DS36457 Rev. 1 - 2

11

V

DD

SOURCE

NIS5132

3

ENABLE

GND dv/dt

12

I

LIMIT

10

9 8 7 6

R

4

S

LOAD

Figure 1 Application Circuit with Direct Current Sensing

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Typical Application Circuits (cont.)

NIS5132

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+12V

ENABLE

GND

11

V

DD

SOURCE

NIS5132

3

ENABLE

GND dv/dt

12

I

LIMIT

10

9 8 7 6

R

S

4

LOAD

Figure 2 Application Circuit with Kelvin Current Sensing

SOURCE

I

LIMIT

V

DD

NIS5132

ENABLE

V

DD

NIS5132

SOURCE

I

LIMIT

R

S

LOAD

GNDdv/dt

ENABLE

Figure 3 Application Circuit with Common Thermal Shutdown

GND dv/dt

Pin Descriptions

Package: U-DFN3030-10

Pin Number Pin Name Function

1 GND Ground pin

Internal NMOS power device turn-on time adjustment pin:

2 dv/dt

3 Enable/Fault

4

5 NC No connect

6 to 10 Source

Exposed PAD

I

LIMIT

V

DD

If this pin is is left unconnected, the internal capacitor ensures the turn-on ramp is over a period of 2ms typical. If an additional delay is required, connect a capacitor from this pin to the ground.

Tri-state bi-directional interface pin: The output can be disabled by pulling this pin to ground through an open drain or an open collector. Additionally, this pin output goes to an intermediate state to indicate that the device

is in thermal shutdown state. This pin can also be connected together with other NIS5132 devices to cause a system-wide simultaneous shutdown during thermal events.

Current limit setting pin: A resistor between Source pins and this pin sets the overload and short-circuit current limit

thresholds.

The internal NMOS power device’s Source pins: These pins are the Source of internal power device and also the output terminal of the

electronic fuse

Positive input voltage to the device

LOAD

NIS5132

Document number: DS36457 Rev. 1 - 5

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Functional Block Diagram

NIS5132

V

DD

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ENABLE/

FAULT

EN/Fault

Enable

Thermal

Shutdown

UVLO

4.3V

12µA

Charge

Pump

Current

Limit

Voltage

Clamp

Figure 4 Block Diagram

dv/dt

Control

Startup

Blanking

2.64V

SOURCE

I

LIMIT

dv/dt

GND

+

Enable SD

-

NIS5132

Document number: DS36457 Rev. 1 - 5

1.4V

0.58V

SD

Figure 5 Enable/Fault Function Circuit

Thermal

Shutdown

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-

+

Thermal Reset

Thermal SD

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Absolute Maximum Ratings (Note 4) (@T

Symbol Characteristic Value Unit

VDD

θJA

θJL

θJC

P

DMAX

Ts Storage temperature range -55 to +155

TJ

TL

Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.

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5. Negative voltage will not damage the device provided that the power dissipation is within the package package dissipation rating.

6. 1 oz copper on double sided FR4 PCB

7. Thermal limit is set above the maximum thermal rating. It is not recommended to operate the device at temperature above the maximum rating for extended period.

Input voltage in steady state operating conditions (Note 5) -0.6 to +18

Input voltage - transient (100ms) -0.6 to +25

Junction to air thermal resistance

Junction to lead thermal resistance 27

Junction to case thermal resistance 20

Package Power Dissipation at TA= +25°C

Thermal derating above +25°C

Operating junction temperature (Note 7) -40 to +150

Lead temperature during soldering (10s) 260

= +25°C, unless otherwise specified.)

A

2

0.1 in

(Note 6) 227

0.5 in2 (Note 6) 95

1.3 W

10.4 (TBD)

Recommended Operating Conditions

NIS5132

V

°C/W

mW/°C

°C

Symbol Characteristic Test Condition Rating Unit

VDD

TJ

Supply Voltage Operating 9.0 to 18.0 V

Operating Juntion Temperature Range Operating -40 to +150

°C

NIS5132

Document number: DS36457 Rev. 1 - 5

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